Low temperature transport properties of thin SOI MOSFETs

Mika Prunnila (Corresponding Author), Jouni Ahopelto, F. Gamiz

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (tSOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above ∼16.5 nm is ∼1.9 m2/V s. The set of devices with thinnest channel (tSOI=10–15 nm) suggest that the peak mobility decreases with decreasing tSOI.
    Original languageEnglish
    Pages (from-to)341-345
    Number of pages5
    JournalSuperlattices and Microstructures
    Volume34
    Issue number3-6
    DOIs
    Publication statusPublished - 2003
    MoE publication typeA1 Journal article-refereed
    Event6th International Conference on New Phenomena in Mesoscopic Structures and 4th International Conference on Surfaces and Interfaces of Mesoscopic Devices - Maui, United States
    Duration: 1 Dec 20035 Dec 2003

    Fingerprint

    Silicon
    Transport properties
    field effect transistors
    transport properties
    insulators
    Film thickness
    silicon
    film thickness
    Field effect transistors
    Temperature
    Fabrication
    fabrication

    Keywords

    • silicon-on-insulator
    • SOI
    • MOSFET
    • electron mobility
    • quantum wells

    Cite this

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    title = "Low temperature transport properties of thin SOI MOSFETs",
    abstract = "Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (tSOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above ∼16.5 nm is ∼1.9 m2/V s. The set of devices with thinnest channel (tSOI=10–15 nm) suggest that the peak mobility decreases with decreasing tSOI.",
    keywords = "silicon-on-insulator, SOI, MOSFET, electron mobility, quantum wells",
    author = "Mika Prunnila and Jouni Ahopelto and F. Gamiz",
    year = "2003",
    doi = "10.1016/j.spmi.2004.03.023",
    language = "English",
    volume = "34",
    pages = "341--345",
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    issn = "0749-6036",
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    }

    Low temperature transport properties of thin SOI MOSFETs. / Prunnila, Mika (Corresponding Author); Ahopelto, Jouni; Gamiz, F.

    In: Superlattices and Microstructures, Vol. 34, No. 3-6, 2003, p. 341-345.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Low temperature transport properties of thin SOI MOSFETs

    AU - Prunnila, Mika

    AU - Ahopelto, Jouni

    AU - Gamiz, F.

    PY - 2003

    Y1 - 2003

    N2 - Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (tSOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above ∼16.5 nm is ∼1.9 m2/V s. The set of devices with thinnest channel (tSOI=10–15 nm) suggest that the peak mobility decreases with decreasing tSOI.

    AB - Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (tSOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above ∼16.5 nm is ∼1.9 m2/V s. The set of devices with thinnest channel (tSOI=10–15 nm) suggest that the peak mobility decreases with decreasing tSOI.

    KW - silicon-on-insulator

    KW - SOI

    KW - MOSFET

    KW - electron mobility

    KW - quantum wells

    U2 - 10.1016/j.spmi.2004.03.023

    DO - 10.1016/j.spmi.2004.03.023

    M3 - Article

    VL - 34

    SP - 341

    EP - 345

    JO - Superlattices and Microstructures

    JF - Superlattices and Microstructures

    SN - 0749-6036

    IS - 3-6

    ER -