Low temperature transport properties of thin SOI MOSFETs

Mika Prunnila (Corresponding Author), Jouni Ahopelto, F. Gamiz

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (tSOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above ∼16.5 nm is ∼1.9 m2/V s. The set of devices with thinnest channel (tSOI=10–15 nm) suggest that the peak mobility decreases with decreasing tSOI.
Original languageEnglish
Pages (from-to)341-345
Number of pages5
JournalSuperlattices and Microstructures
Volume34
Issue number3-6
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed
Eventjoint 6th International Conference on New Phenomena in Mesoscopic Structures and 4th International Conference on Surfaces and Interfaces of Mesoscopic Devices - Maui, United States
Duration: 1 Dec 20035 Dec 2003

Fingerprint

Silicon
Transport properties
field effect transistors
transport properties
insulators
Film thickness
silicon
film thickness
Field effect transistors
Temperature
Fabrication
fabrication

Keywords

  • silicon-on-insulator
  • SOI
  • MOSFET
  • electron mobility
  • quantum wells

Cite this

@article{daad54acebe34da795403daa39180c4b,
title = "Low temperature transport properties of thin SOI MOSFETs",
abstract = "Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (tSOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above ∼16.5 nm is ∼1.9 m2/V s. The set of devices with thinnest channel (tSOI=10–15 nm) suggest that the peak mobility decreases with decreasing tSOI.",
keywords = "silicon-on-insulator, SOI, MOSFET, electron mobility, quantum wells",
author = "Mika Prunnila and Jouni Ahopelto and F. Gamiz",
year = "2003",
doi = "10.1016/j.spmi.2004.03.023",
language = "English",
volume = "34",
pages = "341--345",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press",
number = "3-6",

}

Low temperature transport properties of thin SOI MOSFETs. / Prunnila, Mika (Corresponding Author); Ahopelto, Jouni; Gamiz, F.

In: Superlattices and Microstructures, Vol. 34, No. 3-6, 2003, p. 341-345.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Low temperature transport properties of thin SOI MOSFETs

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Gamiz, F.

PY - 2003

Y1 - 2003

N2 - Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (tSOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above ∼16.5 nm is ∼1.9 m2/V s. The set of devices with thinnest channel (tSOI=10–15 nm) suggest that the peak mobility decreases with decreasing tSOI.

AB - Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (tSOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above ∼16.5 nm is ∼1.9 m2/V s. The set of devices with thinnest channel (tSOI=10–15 nm) suggest that the peak mobility decreases with decreasing tSOI.

KW - silicon-on-insulator

KW - SOI

KW - MOSFET

KW - electron mobility

KW - quantum wells

U2 - 10.1016/j.spmi.2004.03.023

DO - 10.1016/j.spmi.2004.03.023

M3 - Article

VL - 34

SP - 341

EP - 345

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 3-6

ER -