Low temperature transport properties of thin SOI MOSFETs

Mika Prunnila (Corresponding Author), Jouni Ahopelto, F. Gamiz

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    Abstract

    Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (tSOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above ∼16.5 nm is ∼1.9 m2/V s. The set of devices with thinnest channel (tSOI=10–15 nm) suggest that the peak mobility decreases with decreasing tSOI.
    Original languageEnglish
    Pages (from-to)341-345
    Number of pages5
    JournalSuperlattices and Microstructures
    Volume34
    Issue number3-6
    DOIs
    Publication statusPublished - 2003
    MoE publication typeA1 Journal article-refereed
    Event6th International Conference on New Phenomena in Mesoscopic Structures and 4th International Conference on Surfaces and Interfaces of Mesoscopic Devices - Maui, United States
    Duration: 1 Dec 20035 Dec 2003

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    Keywords

    • silicon-on-insulator
    • SOI
    • MOSFET
    • electron mobility
    • quantum wells

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