Low temperature transport properties of thin SOI MOSFETs

Mika Prunnila; Jouni Ahopelto; F. Gamiz

doi:10.1016/j.spmi.2004.03.023

Low temperature transport properties of thin SOI MOSFETs

Mika Prunnila (Corresponding Author), Jouni Ahopelto, F. Gamiz

University of Granada

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Abstract

Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (t_SOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above ∼16.5 nm is ∼1.9 m²/V s. The set of devices with thinnest channel (t_SOI=10–15 nm) suggest that the peak mobility decreases with decreasing tSOI.

Original language	English
Pages (from-to)	341-345
Number of pages	5
Journal	Superlattices and Microstructures
Volume	34
Issue number	3-6
DOIs	https://doi.org/10.1016/j.spmi.2004.03.023
Publication status	Published - 2003
MoE publication type	A1 Journal article-refereed
Event	6th International Conference on New Phenomena in Mesoscopic Structures and 4th International Conference on Surfaces and Interfaces of Mesoscopic Devices - Maui, United States Duration: 1 Dec 2003 → 5 Dec 2003

Keywords

silicon-on-insulator
SOI
MOSFET
electron mobility
quantum wells

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10.1016/j.spmi.2004.03.023

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title = "Low temperature transport properties of thin SOI MOSFETs",

abstract = "Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (tSOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above ∼16.5 nm is ∼1.9 m2/V s. The set of devices with thinnest channel (tSOI=10–15 nm) suggest that the peak mobility decreases with decreasing tSOI.",

keywords = "silicon-on-insulator, SOI, MOSFET, electron mobility, quantum wells",

author = "Mika Prunnila and Jouni Ahopelto and F. Gamiz",

year = "2003",

doi = "10.1016/j.spmi.2004.03.023",

language = "English",

volume = "34",

pages = "341--345",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press",

number = "3-6",

note = "6th International Conference on New Phenomena in Mesoscopic Structures and 4th International Conference on Surfaces and Interfaces of Mesoscopic Devices, NPMS-6/SIMD-4 ; Conference date: 01-12-2003 Through 05-12-2003",

}

TY - JOUR

T1 - Low temperature transport properties of thin SOI MOSFETs

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Gamiz, F.

PY - 2003

Y1 - 2003

N2 - Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (tSOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above ∼16.5 nm is ∼1.9 m2/V s. The set of devices with thinnest channel (tSOI=10–15 nm) suggest that the peak mobility decreases with decreasing tSOI.

AB - Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (tSOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above ∼16.5 nm is ∼1.9 m2/V s. The set of devices with thinnest channel (tSOI=10–15 nm) suggest that the peak mobility decreases with decreasing tSOI.

KW - silicon-on-insulator

KW - SOI

KW - MOSFET

KW - electron mobility

KW - quantum wells

U2 - 10.1016/j.spmi.2004.03.023

DO - 10.1016/j.spmi.2004.03.023

M3 - Article

SN - 0749-6036

VL - 34

SP - 341

EP - 345

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 3-6

T2 - 6th International Conference on New Phenomena in Mesoscopic Structures and 4th International Conference on Surfaces and Interfaces of Mesoscopic Devices

Y2 - 1 December 2003 through 5 December 2003

ER -

Low temperature transport properties of thin SOI MOSFETs

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Keywords

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