We present a novel ion enhanced organic transistor using a thick, ion conducting mem-brane (MemFET). The membrane acts both as gate insulator and as mechanical sup-port. The fabrication of the membranes starts with a PVDF-film as base material, which is functionalized by the roll-to-roll suitable electron beam irradiation induced grafting technique. For comparison, we have also used the commercially available Nafionr-membrane. The MemFETs are fabricated by standard laboratory fabrication techniques using soluble conducting and semiconducting polymers. The MemFETs operate at 1 V.
|Publication status||Published - 2009|
|MoE publication type||Not Eligible|
|Event||XLIII Annual Conference of the Finnish Physical Society - Espoo, Finland|
Duration: 12 Mar 2009 → 14 Mar 2009
|Conference||XLIII Annual Conference of the Finnish Physical Society|
|Period||12/03/09 → 14/03/09|
- large-scale fabrication
- organic transistor
Kaihovirta, N., Wikman, C-J., Mäkelä, T., Wilén, C-E., & Österbacka, R. (2009). Low-voltage self-supported organic transistors based on ion-conductive membranes. Paper presented at XLIII Annual Conference of the Finnish Physical Society, Espoo, Finland.