Abstract
We present a novel ion enhanced organic transistor using a thick, ion conducting mem-brane (MemFET). The membrane acts both as gate insulator and as mechanical sup-port. The fabrication of the membranes starts with a PVDF-film as base material, which is functionalized by the roll-to-roll suitable electron beam irradiation induced grafting technique. For comparison, we have also used the commercially available Nafionr-membrane. The MemFETs are fabricated by standard laboratory fabrication techniques using soluble conducting and semiconducting polymers. The MemFETs operate at 1 V.
| Original language | English |
|---|---|
| Publication status | Published - 2009 |
| MoE publication type | Not Eligible |
| Event | XLIII Annual Conference of the Finnish Physical Society - Espoo, Finland Duration: 12 Mar 2009 → 14 Mar 2009 |
Conference
| Conference | XLIII Annual Conference of the Finnish Physical Society |
|---|---|
| Country/Territory | Finland |
| City | Espoo |
| Period | 12/03/09 → 14/03/09 |
Keywords
- large-scale fabrication
- organic transistor
- roll-to-roll
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