TY - JOUR
T1 - Magnetic Czochralski silicon strip detectors for Super-LHC experiments
AU - Tuovinen, Esa
AU - Härkönen, Jaakko
AU - Luukka, Panja
AU - Mäenpää, Teppo
AU - Moilanen, Henri
AU - Kassamakov, Ivan
AU - Tuominen, Eija
PY - 2011/4/21
Y1 - 2011/4/21
N2 - High resistivity and high oxygen concentration of silicon wafers can be beneficial for the radiation hardness of silicon detectors. Wafers of Magnetic Czochralski silicon (MCz-Si) can be grown with a resistivity of a few kΩcm and with well-controlled, high oxygen concentration. According to the beam test results presented in this paper, n-type MCz-Si bulk, p-strip readout detectors with can be operated with acceptable signal-to-noise ratio up to the irradiation fluence of 1×1015 cm-2 1-MeV neutron equivalent. The improved radiation hardness compared to that of traditional p-in-n Float Zone silicon (p-in-n FZ-Si) detectors can be explained by better electric field distribution inside MCz-Si detectors. The difference between the distributions is clearly shown by Transient Current Technique (TCT) measurements, presented in this paper. Thus, strip detectors made on n-type MCz-Si are a feasible option for the outer tracker layers of the potential upgrade of the Large Hadron Collider (LHC), the Super-LHC. This corresponds approximately 95% of the total area of silicon detectors in the Super-LHC.
AB - High resistivity and high oxygen concentration of silicon wafers can be beneficial for the radiation hardness of silicon detectors. Wafers of Magnetic Czochralski silicon (MCz-Si) can be grown with a resistivity of a few kΩcm and with well-controlled, high oxygen concentration. According to the beam test results presented in this paper, n-type MCz-Si bulk, p-strip readout detectors with can be operated with acceptable signal-to-noise ratio up to the irradiation fluence of 1×1015 cm-2 1-MeV neutron equivalent. The improved radiation hardness compared to that of traditional p-in-n Float Zone silicon (p-in-n FZ-Si) detectors can be explained by better electric field distribution inside MCz-Si detectors. The difference between the distributions is clearly shown by Transient Current Technique (TCT) measurements, presented in this paper. Thus, strip detectors made on n-type MCz-Si are a feasible option for the outer tracker layers of the potential upgrade of the Large Hadron Collider (LHC), the Super-LHC. This corresponds approximately 95% of the total area of silicon detectors in the Super-LHC.
KW - Beam tests
KW - Particle detectors
KW - Radiation hardness
KW - Silicon
KW - Transient current technique
UR - http://www.scopus.com/inward/record.url?scp=79955923491&partnerID=8YFLogxK
U2 - 10.1016/j.nima.2010.04.089
DO - 10.1016/j.nima.2010.04.089
M3 - Article
AN - SCOPUS:79955923491
SN - 0168-9002
VL - 636
SP - S79-S82
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 1 SUPPL.
ER -