Magnetic, electrical and surface morphological characterization of AuGe/Ni/Au Ohmic contact metallization on GaAs/AlGaAs multilayer structures

T. S. Abhilash, Ch Ravi Kumar, G. Rajaram

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

A process issue arising from the use of ferromagnetic Nickel in the AuGe/Ni/Au Ohmic contact metallization is studied in the context of magnetic field sensors and HEMT devices made using GaAs/AlGaAs multilayer structures with the two dimensional electron gas layer. The dependence of magnetization, contact resistance, adhesion, surface roughness and current distribution of alloyed Ohmic contacts on parameters such as Ni layer thickness, anneal temperature and Au-Ge alloy composition are discussed. The magnetization measurements provided some new and interesting insights into changes occurring in the metallization layers prior to alloying.

Original languageEnglish
Pages (from-to)396-403
Number of pages8
JournalJournal of Nano- and Electronic Physics
Volume3
Issue number1 PART2
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

Keywords

  • GaAs/AlGaAs
  • Hall sensors
  • Magnetic properties
  • Ohmic contact

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