Magnetometry with Low-Resistance Proximity Josephson Junction

Robab Najafi Jabdaraghi; Jussi T. Peltonen; Dimitri S. Golubev; Jukka P. Pekola

doi:10.1007/s10909-018-1863-x

Magnetometry with Low-Resistance Proximity Josephson Junction

Robab Najafi Jabdaraghi^*, Jussi T. Peltonen, Dimitri S. Golubev, Jukka P. Pekola

^*Corresponding author for this work

QTF - Quantum Technology Finland - The National Centre of Excellence

Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) and its key constituent formed by a Nb–Cu–Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and deposition steps, relying on Ar ion cleaning of the Nb contact surfaces. The quality of the Nb–Cu interface is characterized by measuring the temperature-dependent equilibrium critical supercurrent of the SNS junction. In the Nb-SQUIPT device, we observe a maximum flux-to-current transfer function value of about 55nA/Φ0 in the sub-gap regime of bias voltages. This results in suppression of power dissipation down to a few fW. Low-bias operation of the device with a relatively low probe junction resistance decreases the dissipation by up to two orders of magnitude compared to a conventional device based on an Al–Cu–Al SNS junction and an Al tunnel probe (Al-SQUIPT).

Original language	English
Pages (from-to)	344-353
Journal	Journal of Low Temperature Physics
Volume	191
Issue number	5-6
DOIs	https://doi.org/10.1007/s10909-018-1863-x
Publication status	Published - 1 Jun 2018
MoE publication type	A1 Journal article-refereed

Funding

Acknowledgements The work has been supported by the Academy of Finland (Project Nos. 284594, 275167, and 312057). We acknowledge Micronova Nanofabrication Centre of OtaNano research infrastructure for providing the processing facilities, and for the sputtered Nb films.

Keywords

Nb-SQUIPT
Proximity effect
SNS junction
SQUIPT

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10.1007/s10909-018-1863-x

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title = "Magnetometry with Low-Resistance Proximity Josephson Junction",

abstract = "We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) and its key constituent formed by a Nb–Cu–Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and deposition steps, relying on Ar ion cleaning of the Nb contact surfaces. The quality of the Nb–Cu interface is characterized by measuring the temperature-dependent equilibrium critical supercurrent of the SNS junction. In the Nb-SQUIPT device, we observe a maximum flux-to-current transfer function value of about 55nA/Φ0 in the sub-gap regime of bias voltages. This results in suppression of power dissipation down to a few fW. Low-bias operation of the device with a relatively low probe junction resistance decreases the dissipation by up to two orders of magnitude compared to a conventional device based on an Al–Cu–Al SNS junction and an Al tunnel probe (Al-SQUIPT).",

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note = "Funding Information: Acknowledgements The work has been supported by the Academy of Finland (Project Nos. 284594, 275167, and 312057). We acknowledge Micronova Nanofabrication Centre of OtaNano research infrastructure for providing the processing facilities, and for the sputtered Nb films. Publisher Copyright: {\textcopyright} 2018, Springer Science+Business Media, LLC, part of Springer Nature. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

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doi = "10.1007/s10909-018-1863-x",

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AU - Golubev, Dimitri S.

AU - Pekola, Jukka P.

N1 - Funding Information: Acknowledgements The work has been supported by the Academy of Finland (Project Nos. 284594, 275167, and 312057). We acknowledge Micronova Nanofabrication Centre of OtaNano research infrastructure for providing the processing facilities, and for the sputtered Nb films. Publisher Copyright: © 2018, Springer Science+Business Media, LLC, part of Springer Nature. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2018/6/1

Y1 - 2018/6/1

N2 - We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) and its key constituent formed by a Nb–Cu–Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and deposition steps, relying on Ar ion cleaning of the Nb contact surfaces. The quality of the Nb–Cu interface is characterized by measuring the temperature-dependent equilibrium critical supercurrent of the SNS junction. In the Nb-SQUIPT device, we observe a maximum flux-to-current transfer function value of about 55nA/Φ0 in the sub-gap regime of bias voltages. This results in suppression of power dissipation down to a few fW. Low-bias operation of the device with a relatively low probe junction resistance decreases the dissipation by up to two orders of magnitude compared to a conventional device based on an Al–Cu–Al SNS junction and an Al tunnel probe (Al-SQUIPT).

AB - We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) and its key constituent formed by a Nb–Cu–Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and deposition steps, relying on Ar ion cleaning of the Nb contact surfaces. The quality of the Nb–Cu interface is characterized by measuring the temperature-dependent equilibrium critical supercurrent of the SNS junction. In the Nb-SQUIPT device, we observe a maximum flux-to-current transfer function value of about 55nA/Φ0 in the sub-gap regime of bias voltages. This results in suppression of power dissipation down to a few fW. Low-bias operation of the device with a relatively low probe junction resistance decreases the dissipation by up to two orders of magnitude compared to a conventional device based on an Al–Cu–Al SNS junction and an Al tunnel probe (Al-SQUIPT).

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Magnetometry with Low-Resistance Proximity Josephson Junction

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Keywords

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