Abstract
We have studied theoretically the magnetotransport in
ferromagnetic resonant tunnelling diodes (FRTDs), where
alternating magnetic Ga1-xMnxAs and non-magnetic GaAs and
AlAs layers give rise to strongly
spin-polarization-dependent electronic transport. We have
studied two cases: (1) an FRTD structure with a
non-magnetic quantum well between magnetic emitter and
collector layers, and equation (2) an FRTD structure with
a ferromagnetic quantum well between non-magnetic emitter
and collector layers. First a correction to the energy of
the band edge due to the exchange interaction between the
charge carrier spin and the magnetic moments of the Mn
ions is estimated. Then the current-voltage
characteristics of the FRTD are calculated as a function
of temperature and magnetic field using a modified
Tsu-Esaki formula. In the FRTD the transport depends
strongly on the spin polarization of the magnetic
lattice, and in a certain bias voltage range near the
negative resistance region the model predicts colossal
magnetoresistance at temperatures close to the Curie
temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 48-54 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 35 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2002 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- quantum wells
- tunnelling