Magnetotransport in ferromagnetic resonant tunnelling diodes

Pekka Kuivalainen, Anssi Hovinen

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

We have studied theoretically the magnetotransport in ferromagnetic resonant tunnelling diodes (FRTDs), where alternating magnetic Ga1-xMnxAs and non-magnetic GaAs and AlAs layers give rise to strongly spin-polarization-dependent electronic transport. We have studied two cases: (1) an FRTD structure with a non-magnetic quantum well between magnetic emitter and collector layers, and equation (2) an FRTD structure with a ferromagnetic quantum well between non-magnetic emitter and collector layers. First a correction to the energy of the band edge due to the exchange interaction between the charge carrier spin and the magnetic moments of the Mn ions is estimated. Then the current-voltage characteristics of the FRTD are calculated as a function of temperature and magnetic field using a modified Tsu-Esaki formula. In the FRTD the transport depends strongly on the spin polarization of the magnetic lattice, and in a certain bias voltage range near the negative resistance region the model predicts colossal magnetoresistance at temperatures close to the Curie temperature.
Original languageEnglish
Pages (from-to)48-54
JournalJournal of Physics D: Applied Physics
Volume35
Issue number1
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

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Resonant tunneling diodes
Galvanomagnetic effects
resonant tunneling diodes
Spin polarization
accumulators
Semiconductor quantum wells
emitters
Colossal magnetoresistance
quantum wells
Negative resistance
Exchange interactions
electric potential
polarization
Current voltage characteristics
Curie temperature
Bias voltage
Magnetic moments
Charge carriers
charge carriers
Temperature distribution

Keywords

  • quantum wells
  • tunnelling

Cite this

Kuivalainen, Pekka ; Hovinen, Anssi. / Magnetotransport in ferromagnetic resonant tunnelling diodes. In: Journal of Physics D: Applied Physics. 2002 ; Vol. 35, No. 1. pp. 48-54.
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Magnetotransport in ferromagnetic resonant tunnelling diodes. / Kuivalainen, Pekka; Hovinen, Anssi.

In: Journal of Physics D: Applied Physics, Vol. 35, No. 1, 2002, p. 48-54.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Magnetotransport in ferromagnetic resonant tunnelling diodes

AU - Kuivalainen, Pekka

AU - Hovinen, Anssi

PY - 2002

Y1 - 2002

N2 - We have studied theoretically the magnetotransport in ferromagnetic resonant tunnelling diodes (FRTDs), where alternating magnetic Ga1-xMnxAs and non-magnetic GaAs and AlAs layers give rise to strongly spin-polarization-dependent electronic transport. We have studied two cases: (1) an FRTD structure with a non-magnetic quantum well between magnetic emitter and collector layers, and equation (2) an FRTD structure with a ferromagnetic quantum well between non-magnetic emitter and collector layers. First a correction to the energy of the band edge due to the exchange interaction between the charge carrier spin and the magnetic moments of the Mn ions is estimated. Then the current-voltage characteristics of the FRTD are calculated as a function of temperature and magnetic field using a modified Tsu-Esaki formula. In the FRTD the transport depends strongly on the spin polarization of the magnetic lattice, and in a certain bias voltage range near the negative resistance region the model predicts colossal magnetoresistance at temperatures close to the Curie temperature.

AB - We have studied theoretically the magnetotransport in ferromagnetic resonant tunnelling diodes (FRTDs), where alternating magnetic Ga1-xMnxAs and non-magnetic GaAs and AlAs layers give rise to strongly spin-polarization-dependent electronic transport. We have studied two cases: (1) an FRTD structure with a non-magnetic quantum well between magnetic emitter and collector layers, and equation (2) an FRTD structure with a ferromagnetic quantum well between non-magnetic emitter and collector layers. First a correction to the energy of the band edge due to the exchange interaction between the charge carrier spin and the magnetic moments of the Mn ions is estimated. Then the current-voltage characteristics of the FRTD are calculated as a function of temperature and magnetic field using a modified Tsu-Esaki formula. In the FRTD the transport depends strongly on the spin polarization of the magnetic lattice, and in a certain bias voltage range near the negative resistance region the model predicts colossal magnetoresistance at temperatures close to the Curie temperature.

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