Maskless InP wire formation on planar GaAs substrates

Jouni Ahopelto; H. Lezec; Y. Ochiai; A. Usui; H. Sakaki

doi:10.1063/1.111109

Maskless InP wire formation on planar GaAs substrates

Jouni Ahopelto, H. Lezec, Y. Ochiai, A. Usui, H. Sakaki

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Abstract

Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 μm long wires with submicron cross‐sectional dimensions were obtained in a single growth process. Cross‐sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low, indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.

Original language	English
Pages (from-to)	499-501
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	4
DOIs	https://doi.org/10.1063/1.111109
Publication status	Published - 1994
MoE publication type	A1 Journal article-refereed

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10.1063/1.111109

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title = "Maskless InP wire formation on planar GaAs substrates",

abstract = "Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 μm long wires with submicron cross‐sectional dimensions were obtained in a single growth process. Cross‐sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low, indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.",

author = "Jouni Ahopelto and H. Lezec and Y. Ochiai and A. Usui and H. Sakaki",

year = "1994",

doi = "10.1063/1.111109",

language = "English",

volume = "64",

pages = "499--501",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics (AIP)",

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T1 - Maskless InP wire formation on planar GaAs substrates

AU - Ahopelto, Jouni

AU - Lezec, H.

AU - Ochiai, Y.

AU - Usui, A.

AU - Sakaki, H.

PY - 1994

Y1 - 1994

N2 - Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 μm long wires with submicron cross‐sectional dimensions were obtained in a single growth process. Cross‐sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low, indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.

AB - Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 μm long wires with submicron cross‐sectional dimensions were obtained in a single growth process. Cross‐sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low, indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.

U2 - 10.1063/1.111109

DO - 10.1063/1.111109

M3 - Article

SN - 0003-6951

VL - 64

SP - 499

EP - 501

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Maskless InP wire formation on planar GaAs substrates

Abstract

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