Maskless InP wire formation on planar GaAs substrates

Jouni Ahopelto, H. Lezec, Y. Ochiai, A. Usui, H. Sakaki

    Research output: Contribution to journalArticleScientificpeer-review

    12 Citations (Scopus)

    Abstract

    Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 μm long wires with submicron cross‐sectional dimensions were obtained in a single growth process. Cross‐sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low, indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.
    Original languageEnglish
    Pages (from-to)499-501
    Number of pages3
    JournalApplied Physics Letters
    Volume64
    Issue number4
    DOIs
    Publication statusPublished - 1994
    MoE publication typeA1 Journal article-refereed

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    wire
    selectivity
    quantum wires
    vapor phase epitaxy
    hydrides
    electron microscopes
    ion beams
    nucleation
    fabrication

    Cite this

    Ahopelto, Jouni ; Lezec, H. ; Ochiai, Y. ; Usui, A. ; Sakaki, H. / Maskless InP wire formation on planar GaAs substrates. In: Applied Physics Letters. 1994 ; Vol. 64, No. 4. pp. 499-501.
    @article{937d7f6b09cb4c149b6f20314000a4df,
    title = "Maskless InP wire formation on planar GaAs substrates",
    abstract = "Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 μm long wires with submicron cross‐sectional dimensions were obtained in a single growth process. Cross‐sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low, indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.",
    author = "Jouni Ahopelto and H. Lezec and Y. Ochiai and A. Usui and H. Sakaki",
    year = "1994",
    doi = "10.1063/1.111109",
    language = "English",
    volume = "64",
    pages = "499--501",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    number = "4",

    }

    Ahopelto, J, Lezec, H, Ochiai, Y, Usui, A & Sakaki, H 1994, 'Maskless InP wire formation on planar GaAs substrates', Applied Physics Letters, vol. 64, no. 4, pp. 499-501. https://doi.org/10.1063/1.111109

    Maskless InP wire formation on planar GaAs substrates. / Ahopelto, Jouni; Lezec, H.; Ochiai, Y.; Usui, A.; Sakaki, H.

    In: Applied Physics Letters, Vol. 64, No. 4, 1994, p. 499-501.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Maskless InP wire formation on planar GaAs substrates

    AU - Ahopelto, Jouni

    AU - Lezec, H.

    AU - Ochiai, Y.

    AU - Usui, A.

    AU - Sakaki, H.

    PY - 1994

    Y1 - 1994

    N2 - Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 μm long wires with submicron cross‐sectional dimensions were obtained in a single growth process. Cross‐sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low, indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.

    AB - Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 μm long wires with submicron cross‐sectional dimensions were obtained in a single growth process. Cross‐sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low, indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.

    U2 - 10.1063/1.111109

    DO - 10.1063/1.111109

    M3 - Article

    VL - 64

    SP - 499

    EP - 501

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 4

    ER -