Maskless InP wire formation on planar GaAs substrates

Jouni Ahopelto, H. Lezec, Y. Ochiai, A. Usui, H. Sakaki

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    Abstract

    Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 μm long wires with submicron cross‐sectional dimensions were obtained in a single growth process. Cross‐sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low, indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.
    Original languageEnglish
    Pages (from-to)499-501
    Number of pages3
    JournalApplied Physics Letters
    Volume64
    Issue number4
    DOIs
    Publication statusPublished - 1994
    MoE publication typeA1 Journal article-refereed

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