Maskless InP wire formation on planar GaAs substrates

Jouni Ahopelto, H. Lezec, Y. Ochiai, A. Usui, H. Sakaki

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)

Abstract

Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 μm long wires with submicron cross‐sectional dimensions were obtained in a single growth process. Cross‐sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low, indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.
Original languageEnglish
Pages (from-to)499-501
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number4
DOIs
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

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wire
selectivity
quantum wires
vapor phase epitaxy
hydrides
electron microscopes
ion beams
nucleation
fabrication

Cite this

Ahopelto, Jouni ; Lezec, H. ; Ochiai, Y. ; Usui, A. ; Sakaki, H. / Maskless InP wire formation on planar GaAs substrates. In: Applied Physics Letters. 1994 ; Vol. 64, No. 4. pp. 499-501.
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author = "Jouni Ahopelto and H. Lezec and Y. Ochiai and A. Usui and H. Sakaki",
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Ahopelto, J, Lezec, H, Ochiai, Y, Usui, A & Sakaki, H 1994, 'Maskless InP wire formation on planar GaAs substrates', Applied Physics Letters, vol. 64, no. 4, pp. 499-501. https://doi.org/10.1063/1.111109

Maskless InP wire formation on planar GaAs substrates. / Ahopelto, Jouni; Lezec, H.; Ochiai, Y.; Usui, A.; Sakaki, H.

In: Applied Physics Letters, Vol. 64, No. 4, 1994, p. 499-501.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Maskless InP wire formation on planar GaAs substrates

AU - Ahopelto, Jouni

AU - Lezec, H.

AU - Ochiai, Y.

AU - Usui, A.

AU - Sakaki, H.

PY - 1994

Y1 - 1994

N2 - Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 μm long wires with submicron cross‐sectional dimensions were obtained in a single growth process. Cross‐sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low, indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.

AB - Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 μm long wires with submicron cross‐sectional dimensions were obtained in a single growth process. Cross‐sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low, indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.

U2 - 10.1063/1.111109

DO - 10.1063/1.111109

M3 - Article

VL - 64

SP - 499

EP - 501

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

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