Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs

Pekka Törmä; Olli Svensk; Muhammad Ali; Sami Suihkonen; Markku Sopanen; Maxim A. Odnoblyudov; Vladislav E. Bougrov

doi:10.1016/j.sse.2008.10.013

Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs

Pekka Törmä (Corresponding Author), Olli Svensk, Muhammad Ali, Sami Suihkonen, Markku Sopanen, Maxim A. Odnoblyudov, Vladislav E. Bougrov

Not published at VTT

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

A simple wet etching method based on the use of hot sulphuric (H2SO4) acid for roughening of the backside of the sapphire substrates for creating light scattering objects without any lithography processes is described. Scanning electron microscope images show that this method offers a possibility to tailor the size of the scattering objects by varying the treatment time. A metal organic vapor phase epitaxy (MOVPE) grown light emitting diode (LED) structure having a roughened sapphire backside exhibits a 20-25% increase of the electroluminescence output power compared to a reference sample on the standard c-plane sapphire at the operating wavelength of 460 nm. © 2008 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	166-169
Number of pages	4
Journal	Solid-State Electronics
Volume	53
Issue number	2
DOIs	https://doi.org/10.1016/j.sse.2008.10.013
Publication status	Published - Feb 2009
MoE publication type	A1 Journal article-refereed

Keywords

Light emitting diode
MOCVD
Nitrides
Semiconducting III-V materials

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10.1016/j.sse.2008.10.013

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Cite this

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title = "Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs",

abstract = "A simple wet etching method based on the use of hot sulphuric (H2SO4) acid for roughening of the backside of the sapphire substrates for creating light scattering objects without any lithography processes is described. Scanning electron microscope images show that this method offers a possibility to tailor the size of the scattering objects by varying the treatment time. A metal organic vapor phase epitaxy (MOVPE) grown light emitting diode (LED) structure having a roughened sapphire backside exhibits a 20-25% increase of the electroluminescence output power compared to a reference sample on the standard c-plane sapphire at the operating wavelength of 460 nm. {\textcopyright} 2008 Elsevier Ltd. All rights reserved.",

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author = "Pekka T{\"o}rm{\"a} and Olli Svensk and Muhammad Ali and Sami Suihkonen and Markku Sopanen and Odnoblyudov, {Maxim A.} and Bougrov, {Vladislav E.}",

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T1 - Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs

AU - Törmä, Pekka

AU - Svensk, Olli

AU - Ali, Muhammad

AU - Suihkonen, Sami

AU - Sopanen, Markku

AU - Odnoblyudov, Maxim A.

AU - Bougrov, Vladislav E.

PY - 2009/2

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N2 - A simple wet etching method based on the use of hot sulphuric (H2SO4) acid for roughening of the backside of the sapphire substrates for creating light scattering objects without any lithography processes is described. Scanning electron microscope images show that this method offers a possibility to tailor the size of the scattering objects by varying the treatment time. A metal organic vapor phase epitaxy (MOVPE) grown light emitting diode (LED) structure having a roughened sapphire backside exhibits a 20-25% increase of the electroluminescence output power compared to a reference sample on the standard c-plane sapphire at the operating wavelength of 460 nm. © 2008 Elsevier Ltd. All rights reserved.

AB - A simple wet etching method based on the use of hot sulphuric (H2SO4) acid for roughening of the backside of the sapphire substrates for creating light scattering objects without any lithography processes is described. Scanning electron microscope images show that this method offers a possibility to tailor the size of the scattering objects by varying the treatment time. A metal organic vapor phase epitaxy (MOVPE) grown light emitting diode (LED) structure having a roughened sapphire backside exhibits a 20-25% increase of the electroluminescence output power compared to a reference sample on the standard c-plane sapphire at the operating wavelength of 460 nm. © 2008 Elsevier Ltd. All rights reserved.

KW - Light emitting diode

KW - MOCVD

KW - Nitrides

KW - Semiconducting III-V materials

U2 - 10.1016/j.sse.2008.10.013

DO - 10.1016/j.sse.2008.10.013

M3 - Article

SN - 0038-1101

VL - 53

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EP - 169

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 2

ER -

Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs

Abstract

Keywords

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