A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrated. The process is based on the selectivity of the growth of InP on lines created by focused ion beam bombardment, together with the selectivity of the growth of InGaAs on the InP wires. Intense photoluminescene is observed from the wires and the emission shows clear polarization parallel and perpendicular to the wires. Cathodoluminescene images confirm that the luminescence originates from the wires.
Ahopelto, J., Sopanen, M., Lipsanen, H., Lourdudoss, S., Messmer, R., Höftling, E., Reithmaier, J., Forchel, A., Petersson, A., & Samuelson, L. (1997). Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs. Applied Physics Letters, 70(21), 2828 - 2830. https://doi.org/10.1063/1.119015