Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs

Jouni Ahopelto, Markku Sopanen, Harri Lipsanen, S. Lourdudoss, Rodriguez Messmer, E. Höftling, J. Reithmaier, A. Forchel, A. Petersson, L. Samuelson

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)

Abstract

A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrated. The process is based on the selectivity of the growth of InP on lines created by focused ion beam bombardment, together with the selectivity of the growth of InGaAs on the InP wires. Intense photoluminescene is observed from the wires and the emission shows clear polarization parallel and perpendicular to the wires. Cathodoluminescene images confirm that the luminescence originates from the wires.
Original languageEnglish
Pages (from-to)2828 - 2830
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number21
DOIs
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed

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quantum wires
wire
selectivity
bombardment
ion beams
luminescence
fabrication
polarization

Cite this

Ahopelto, J., Sopanen, M., Lipsanen, H., Lourdudoss, S., Messmer, R., Höftling, E., ... Samuelson, L. (1997). Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs. Applied Physics Letters, 70(21), 2828 - 2830. https://doi.org/10.1063/1.119015
Ahopelto, Jouni ; Sopanen, Markku ; Lipsanen, Harri ; Lourdudoss, S. ; Messmer, Rodriguez ; Höftling, E. ; Reithmaier, J. ; Forchel, A. ; Petersson, A. ; Samuelson, L. / Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs. In: Applied Physics Letters. 1997 ; Vol. 70, No. 21. pp. 2828 - 2830.
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title = "Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs",
abstract = "A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrated. The process is based on the selectivity of the growth of InP on lines created by focused ion beam bombardment, together with the selectivity of the growth of InGaAs on the InP wires. Intense photoluminescene is observed from the wires and the emission shows clear polarization parallel and perpendicular to the wires. Cathodoluminescene images confirm that the luminescence originates from the wires.",
author = "Jouni Ahopelto and Markku Sopanen and Harri Lipsanen and S. Lourdudoss and Rodriguez Messmer and E. H{\"o}ftling and J. Reithmaier and A. Forchel and A. Petersson and L. Samuelson",
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Ahopelto, J, Sopanen, M, Lipsanen, H, Lourdudoss, S, Messmer, R, Höftling, E, Reithmaier, J, Forchel, A, Petersson, A & Samuelson, L 1997, 'Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs', Applied Physics Letters, vol. 70, no. 21, pp. 2828 - 2830. https://doi.org/10.1063/1.119015

Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs. / Ahopelto, Jouni; Sopanen, Markku; Lipsanen, Harri; Lourdudoss, S.; Messmer, Rodriguez; Höftling, E.; Reithmaier, J.; Forchel, A.; Petersson, A.; Samuelson, L.

In: Applied Physics Letters, Vol. 70, No. 21, 1997, p. 2828 - 2830.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs

AU - Ahopelto, Jouni

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - Lourdudoss, S.

AU - Messmer, Rodriguez

AU - Höftling, E.

AU - Reithmaier, J.

AU - Forchel, A.

AU - Petersson, A.

AU - Samuelson, L.

PY - 1997

Y1 - 1997

N2 - A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrated. The process is based on the selectivity of the growth of InP on lines created by focused ion beam bombardment, together with the selectivity of the growth of InGaAs on the InP wires. Intense photoluminescene is observed from the wires and the emission shows clear polarization parallel and perpendicular to the wires. Cathodoluminescene images confirm that the luminescence originates from the wires.

AB - A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrated. The process is based on the selectivity of the growth of InP on lines created by focused ion beam bombardment, together with the selectivity of the growth of InGaAs on the InP wires. Intense photoluminescene is observed from the wires and the emission shows clear polarization parallel and perpendicular to the wires. Cathodoluminescene images confirm that the luminescence originates from the wires.

U2 - 10.1063/1.119015

DO - 10.1063/1.119015

M3 - Article

VL - 70

SP - 2828

EP - 2830

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

ER -

Ahopelto J, Sopanen M, Lipsanen H, Lourdudoss S, Messmer R, Höftling E et al. Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs. Applied Physics Letters. 1997;70(21):2828 - 2830. https://doi.org/10.1063/1.119015