Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs

Jouni Ahopelto, Markku Sopanen, Harri Lipsanen, S. Lourdudoss, Rodriguez Messmer, E. Höftling, J. Reithmaier, A. Forchel, A. Petersson, L. Samuelson

    Research output: Contribution to journalArticleScientificpeer-review

    8 Citations (Scopus)

    Abstract

    A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrated. The process is based on the selectivity of the growth of InP on lines created by focused ion beam bombardment, together with the selectivity of the growth of InGaAs on the InP wires. Intense photoluminescene is observed from the wires and the emission shows clear polarization parallel and perpendicular to the wires. Cathodoluminescene images confirm that the luminescence originates from the wires.
    Original languageEnglish
    Pages (from-to)2828 - 2830
    Number of pages3
    JournalApplied Physics Letters
    Volume70
    Issue number21
    DOIs
    Publication statusPublished - 1997
    MoE publication typeA1 Journal article-refereed

    Fingerprint Dive into the research topics of 'Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs'. Together they form a unique fingerprint.

  • Cite this

    Ahopelto, J., Sopanen, M., Lipsanen, H., Lourdudoss, S., Messmer, R., Höftling, E., Reithmaier, J., Forchel, A., Petersson, A., & Samuelson, L. (1997). Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs. Applied Physics Letters, 70(21), 2828 - 2830. https://doi.org/10.1063/1.119015