Mass transport in atomic layer deposition carrier gas reactors

Markku Ylilammi

Research output: Contribution to journalArticleScientificpeer-review

29 Citations (Scopus)

Abstract

A detailed model for the operation of a flow type atomic layer deposition (ALD) reactor is developed and tested with the growth of tantalum pentoxide thin films. The model incorporates evaporation, diffusion, and convection phenomena in mass transport and a kinetic description of the surface reactions and film growth. The theory gives a quantitative estimate for the deposition rate and thickness uniformity of the film. The necessary conditions for an ALD operation are discussed. The experiments support the predictions provided a pure ALD mode is prevailing.
Original languageEnglish
Pages (from-to)2474-2479
JournalJournal of the Electrochemical Society
Volume142
Issue number7
DOIs
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed

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Atomic layer deposition
Mass transfer
Gases
Surface reactions
Tantalum
Film growth
Deposition rates
Evaporation
Thin films
Kinetics
Experiments

Cite this

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title = "Mass transport in atomic layer deposition carrier gas reactors",
abstract = "A detailed model for the operation of a flow type atomic layer deposition (ALD) reactor is developed and tested with the growth of tantalum pentoxide thin films. The model incorporates evaporation, diffusion, and convection phenomena in mass transport and a kinetic description of the surface reactions and film growth. The theory gives a quantitative estimate for the deposition rate and thickness uniformity of the film. The necessary conditions for an ALD operation are discussed. The experiments support the predictions provided a pure ALD mode is prevailing.",
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Mass transport in atomic layer deposition carrier gas reactors. / Ylilammi, Markku.

In: Journal of the Electrochemical Society, Vol. 142, No. 7, 1995, p. 2474-2479.

Research output: Contribution to journalArticleScientificpeer-review

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AB - A detailed model for the operation of a flow type atomic layer deposition (ALD) reactor is developed and tested with the growth of tantalum pentoxide thin films. The model incorporates evaporation, diffusion, and convection phenomena in mass transport and a kinetic description of the surface reactions and film growth. The theory gives a quantitative estimate for the deposition rate and thickness uniformity of the film. The necessary conditions for an ALD operation are discussed. The experiments support the predictions provided a pure ALD mode is prevailing.

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