Mass transport in atomic layer deposition carrier gas reactors

Markku Ylilammi

    Research output: Contribution to journalArticleScientificpeer-review

    32 Citations (Scopus)


    A detailed model for the operation of a flow type atomic layer deposition (ALD) reactor is developed and tested with the growth of tantalum pentoxide thin films. The model incorporates evaporation, diffusion, and convection phenomena in mass transport and a kinetic description of the surface reactions and film growth. The theory gives a quantitative estimate for the deposition rate and thickness uniformity of the film. The necessary conditions for an ALD operation are discussed. The experiments support the predictions provided a pure ALD mode is prevailing.
    Original languageEnglish
    Pages (from-to)2474-2479
    JournalJournal of the Electrochemical Society
    Issue number7
    Publication statusPublished - 1995
    MoE publication typeA1 Journal article-refereed


    Dive into the research topics of 'Mass transport in atomic layer deposition carrier gas reactors'. Together they form a unique fingerprint.

    Cite this