Mass transport in atomic layer deposition carrier gas reactors

Markku Ylilammi

    Research output: Contribution to journalArticleScientificpeer-review

    29 Citations (Scopus)

    Abstract

    A detailed model for the operation of a flow type atomic layer deposition (ALD) reactor is developed and tested with the growth of tantalum pentoxide thin films. The model incorporates evaporation, diffusion, and convection phenomena in mass transport and a kinetic description of the surface reactions and film growth. The theory gives a quantitative estimate for the deposition rate and thickness uniformity of the film. The necessary conditions for an ALD operation are discussed. The experiments support the predictions provided a pure ALD mode is prevailing.
    Original languageEnglish
    Pages (from-to)2474-2479
    JournalJournal of the Electrochemical Society
    Volume142
    Issue number7
    DOIs
    Publication statusPublished - 1995
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Atomic layer deposition
    Mass transfer
    Gases
    Surface reactions
    Tantalum
    Film growth
    Deposition rates
    Evaporation
    Thin films
    Kinetics
    Experiments

    Cite this

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    title = "Mass transport in atomic layer deposition carrier gas reactors",
    abstract = "A detailed model for the operation of a flow type atomic layer deposition (ALD) reactor is developed and tested with the growth of tantalum pentoxide thin films. The model incorporates evaporation, diffusion, and convection phenomena in mass transport and a kinetic description of the surface reactions and film growth. The theory gives a quantitative estimate for the deposition rate and thickness uniformity of the film. The necessary conditions for an ALD operation are discussed. The experiments support the predictions provided a pure ALD mode is prevailing.",
    author = "Markku Ylilammi",
    year = "1995",
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    Mass transport in atomic layer deposition carrier gas reactors. / Ylilammi, Markku.

    In: Journal of the Electrochemical Society, Vol. 142, No. 7, 1995, p. 2474-2479.

    Research output: Contribution to journalArticleScientificpeer-review

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    AB - A detailed model for the operation of a flow type atomic layer deposition (ALD) reactor is developed and tested with the growth of tantalum pentoxide thin films. The model incorporates evaporation, diffusion, and convection phenomena in mass transport and a kinetic description of the surface reactions and film growth. The theory gives a quantitative estimate for the deposition rate and thickness uniformity of the film. The necessary conditions for an ALD operation are discussed. The experiments support the predictions provided a pure ALD mode is prevailing.

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