Measurements and simulations of silicon semi 3D radiation detectors

Juha Kalliopuska (Corresponding Author), Simo Eränen

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

New results on the semi three-dimensional (3D) silicon radiation pixel detectors are reported. In particular, improved capacitance, leakage current measurements and 3D simulations are considered. In addition, comparisons between the experimental data and simulations are performed. The results support the anticipated beneficial features of 3D detector structures like low depletion bias, low leakage currents combined with high breakdown voltage and fast collection speed at low bias voltages.
Original languageEnglish
Pages (from-to)22-26
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume568
Issue number1
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed
Event10th European Symposium on Semiconductor Detectors - Bavaria, Germany
Duration: 12 Jun 200516 Jun 2005

Keywords

  • 3D detectors
  • silicon radiation detectors
  • FZ-silicon
  • CZ-silicon
  • 3D simulations
  • surface effects
  • radiation
  • radiation detectors

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