Abstract
New results on the semi three-dimensional (3D) silicon radiation pixel detectors are reported. In particular, improved capacitance, leakage current measurements and 3D simulations are considered. In addition, comparisons between the experimental data and simulations are performed. The results support the anticipated beneficial features of 3D detector structures like low depletion bias, low leakage currents combined with high breakdown voltage and fast collection speed at low bias voltages.
| Original language | English |
|---|---|
| Pages (from-to) | 22-26 |
| Journal | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
| Volume | 568 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2006 |
| MoE publication type | A1 Journal article-refereed |
| Event | 10th European Symposium on Semiconductor Detectors - Bavaria, Germany Duration: 12 Jun 2005 → 16 Jun 2005 |
Keywords
- 3D detectors
- silicon radiation detectors
- FZ-silicon
- CZ-silicon
- 3D simulations
- surface effects
- radiation
- radiation detectors
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