Measurements on the electrical transport properties in CoSi2 and NiSi2 formed by thin film reactions

Christos Krontiras, Jorma Salmi, Leif Grönberg, Ilkka Suni, Jouni Heleskivi

Research output: Contribution to journalArticleScientificpeer-review

7 Citations (Scopus)

Abstract

Electrical resistivity and Hall effect measurements on thin CoSi2 and NiSi2 films were carried out in the temperature range 1.5–300 K and in magnetic fields up to 10T. Metal-like conduction in CoSi2 is inferred from the low residual resistivity and from the temperature dependence of the resistivity which follows Matthiessen's rule. The Hall constant RH deviates from the ideal metallic behaviour suggesting the presence of two carrier types of opposite sign, holes being the predominant species. In NiSi2 a change in the sign of the Hall constant at 110–220 K suggests that a reversal of the predominant carrier type from holes to electrons takes place. This anomalous behaviour of NiSi2 requires further exploration.

Original languageEnglish
Pages (from-to)93 - 99
Number of pages7
JournalThin Solid Films
Volume125
Issue number1-2
DOIs
Publication statusPublished - 1985
MoE publication typeNot Eligible

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Hall effect
Transport properties
transport properties
Thin films
electrical resistivity
thin films
Metals
Magnetic fields
conduction
Temperature
temperature dependence
Electrons
magnetic fields
metals
electrons
temperature

Cite this

Krontiras, Christos ; Salmi, Jorma ; Grönberg, Leif ; Suni, Ilkka ; Heleskivi, Jouni. / Measurements on the electrical transport properties in CoSi2 and NiSi2 formed by thin film reactions. In: Thin Solid Films. 1985 ; Vol. 125, No. 1-2. pp. 93 - 99.
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Measurements on the electrical transport properties in CoSi2 and NiSi2 formed by thin film reactions. / Krontiras, Christos; Salmi, Jorma; Grönberg, Leif; Suni, Ilkka; Heleskivi, Jouni.

In: Thin Solid Films, Vol. 125, No. 1-2, 1985, p. 93 - 99.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Measurements on the electrical transport properties in CoSi2 and NiSi2 formed by thin film reactions

AU - Krontiras, Christos

AU - Salmi, Jorma

AU - Grönberg, Leif

AU - Suni, Ilkka

AU - Heleskivi, Jouni

PY - 1985

Y1 - 1985

N2 - Electrical resistivity and Hall effect measurements on thin CoSi2 and NiSi2 films were carried out in the temperature range 1.5–300 K and in magnetic fields up to 10T. Metal-like conduction in CoSi2 is inferred from the low residual resistivity and from the temperature dependence of the resistivity which follows Matthiessen's rule. The Hall constant RH deviates from the ideal metallic behaviour suggesting the presence of two carrier types of opposite sign, holes being the predominant species. In NiSi2 a change in the sign of the Hall constant at 110–220 K suggests that a reversal of the predominant carrier type from holes to electrons takes place. This anomalous behaviour of NiSi2 requires further exploration.

AB - Electrical resistivity and Hall effect measurements on thin CoSi2 and NiSi2 films were carried out in the temperature range 1.5–300 K and in magnetic fields up to 10T. Metal-like conduction in CoSi2 is inferred from the low residual resistivity and from the temperature dependence of the resistivity which follows Matthiessen's rule. The Hall constant RH deviates from the ideal metallic behaviour suggesting the presence of two carrier types of opposite sign, holes being the predominant species. In NiSi2 a change in the sign of the Hall constant at 110–220 K suggests that a reversal of the predominant carrier type from holes to electrons takes place. This anomalous behaviour of NiSi2 requires further exploration.

U2 - 10.1016/0040-6090(85)90400-6

DO - 10.1016/0040-6090(85)90400-6

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