Measurements on the electrical transport properties in CoSi2 and NiSi2 formed by thin film reactions

Christos Krontiras, Jorma Salmi, Leif Grönberg, Ilkka Suni, Jouni Heleskivi

    Research output: Contribution to journalArticleScientificpeer-review

    7 Citations (Scopus)

    Abstract

    Electrical resistivity and Hall effect measurements on thin CoSi2 and NiSi2 films were carried out in the temperature range 1.5–300 K and in magnetic fields up to 10T. Metal-like conduction in CoSi2 is inferred from the low residual resistivity and from the temperature dependence of the resistivity which follows Matthiessen's rule. The Hall constant RH deviates from the ideal metallic behaviour suggesting the presence of two carrier types of opposite sign, holes being the predominant species. In NiSi2 a change in the sign of the Hall constant at 110–220 K suggests that a reversal of the predominant carrier type from holes to electrons takes place. This anomalous behaviour of NiSi2 requires further exploration.

    Original languageEnglish
    Pages (from-to)93 - 99
    Number of pages7
    JournalThin Solid Films
    Volume125
    Issue number1-2
    DOIs
    Publication statusPublished - 1985
    MoE publication typeNot Eligible

    Fingerprint

    Hall effect
    Transport properties
    transport properties
    Thin films
    electrical resistivity
    thin films
    Metals
    Magnetic fields
    conduction
    Temperature
    temperature dependence
    Electrons
    magnetic fields
    metals
    electrons
    temperature

    Cite this

    Krontiras, Christos ; Salmi, Jorma ; Grönberg, Leif ; Suni, Ilkka ; Heleskivi, Jouni. / Measurements on the electrical transport properties in CoSi2 and NiSi2 formed by thin film reactions. In: Thin Solid Films. 1985 ; Vol. 125, No. 1-2. pp. 93 - 99.
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    abstract = "Electrical resistivity and Hall effect measurements on thin CoSi2 and NiSi2 films were carried out in the temperature range 1.5–300 K and in magnetic fields up to 10T. Metal-like conduction in CoSi2 is inferred from the low residual resistivity and from the temperature dependence of the resistivity which follows Matthiessen's rule. The Hall constant RH deviates from the ideal metallic behaviour suggesting the presence of two carrier types of opposite sign, holes being the predominant species. In NiSi2 a change in the sign of the Hall constant at 110–220 K suggests that a reversal of the predominant carrier type from holes to electrons takes place. This anomalous behaviour of NiSi2 requires further exploration.",
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    Measurements on the electrical transport properties in CoSi2 and NiSi2 formed by thin film reactions. / Krontiras, Christos; Salmi, Jorma; Grönberg, Leif; Suni, Ilkka; Heleskivi, Jouni.

    In: Thin Solid Films, Vol. 125, No. 1-2, 1985, p. 93 - 99.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Measurements on the electrical transport properties in CoSi2 and NiSi2 formed by thin film reactions

    AU - Krontiras, Christos

    AU - Salmi, Jorma

    AU - Grönberg, Leif

    AU - Suni, Ilkka

    AU - Heleskivi, Jouni

    PY - 1985

    Y1 - 1985

    N2 - Electrical resistivity and Hall effect measurements on thin CoSi2 and NiSi2 films were carried out in the temperature range 1.5–300 K and in magnetic fields up to 10T. Metal-like conduction in CoSi2 is inferred from the low residual resistivity and from the temperature dependence of the resistivity which follows Matthiessen's rule. The Hall constant RH deviates from the ideal metallic behaviour suggesting the presence of two carrier types of opposite sign, holes being the predominant species. In NiSi2 a change in the sign of the Hall constant at 110–220 K suggests that a reversal of the predominant carrier type from holes to electrons takes place. This anomalous behaviour of NiSi2 requires further exploration.

    AB - Electrical resistivity and Hall effect measurements on thin CoSi2 and NiSi2 films were carried out in the temperature range 1.5–300 K and in magnetic fields up to 10T. Metal-like conduction in CoSi2 is inferred from the low residual resistivity and from the temperature dependence of the resistivity which follows Matthiessen's rule. The Hall constant RH deviates from the ideal metallic behaviour suggesting the presence of two carrier types of opposite sign, holes being the predominant species. In NiSi2 a change in the sign of the Hall constant at 110–220 K suggests that a reversal of the predominant carrier type from holes to electrons takes place. This anomalous behaviour of NiSi2 requires further exploration.

    U2 - 10.1016/0040-6090(85)90400-6

    DO - 10.1016/0040-6090(85)90400-6

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