Measurements on the electrical transport properties in CoSi2 and NiSi2 formed by thin film reactions

Christos Krontiras, Jorma Salmi, Leif Grönberg, Ilkka Suni, Jouni Heleskivi, A. Rissanen

    Research output: Contribution to journalArticleScientificpeer-review

    7 Citations (Scopus)


    Electrical resistivity and Hall effect measurements on thin CoSi2 and NiSi2 films were carried out in the temperature range 1.5–300 K and in magnetic fields up to 10T. Metal-like conduction in CoSi2 is inferred from the low residual resistivity and from the temperature dependence of the resistivity which follows Matthiessen's rule. The Hall constant RH deviates from the ideal metallic behaviour suggesting the presence of two carrier types of opposite sign, holes being the predominant species. In NiSi2 a change in the sign of the Hall constant at 110–220 K suggests that a reversal of the predominant carrier type from holes to electrons takes place. This anomalous behaviour of NiSi2 requires further exploration.

    Original languageEnglish
    Pages (from-to)93-99
    JournalThin Solid Films
    Issue number1-2
    Publication statusPublished - 1985
    MoE publication typeA1 Journal article-refereed


    Dive into the research topics of 'Measurements on the electrical transport properties in CoSi<sub>2</sub> and NiSi<sub>2</sub> formed by thin film reactions'. Together they form a unique fingerprint.

    Cite this