Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

C. Obermuller; A. Deisenrieder; G. Abstreiter; K. Karrai; S. Grosse; S. Manus; J. Feldman; Harri Lipsanen; Markku Sopanen; Jouni Ahopelto

doi:10.1063/1.124374

Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

C. Obermuller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldman, Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

Research output: Contribution to journal › Article › Scientific › peer-review

16 Citations (Scopus)

Abstract

We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga_0.9In_0.1As quantum dots. This was achieved by scanning a metal coated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope.

Original language	English
Pages (from-to)	358-360
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	3
DOIs	https://doi.org/10.1063/1.124374
Publication status	Published - 1999
MoE publication type	A1 Journal article-refereed

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10.1063/1.124374

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title = "Mechanical nanomanipulation of single strain-induced semiconductor quantum dots",

abstract = "We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga0.9In0.1As quantum dots. This was achieved by scanning a metal coated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope.",

author = "C. Obermuller and A. Deisenrieder and G. Abstreiter and K. Karrai and S. Grosse and S. Manus and J. Feldman and Harri Lipsanen and Markku Sopanen and Jouni Ahopelto",

year = "1999",

doi = "10.1063/1.124374",

language = "English",

volume = "75",

pages = "358--360",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "3",

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TY - JOUR

T1 - Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

AU - Obermuller, C.

AU - Deisenrieder, A.

AU - Abstreiter, G.

AU - Karrai, K.

AU - Grosse, S.

AU - Manus, S.

AU - Feldman, J.

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Ahopelto, Jouni

PY - 1999

Y1 - 1999

N2 - We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga0.9In0.1As quantum dots. This was achieved by scanning a metal coated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope.

AB - We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga0.9In0.1As quantum dots. This was achieved by scanning a metal coated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope.

U2 - 10.1063/1.124374

DO - 10.1063/1.124374

M3 - Article

SN - 0003-6951

VL - 75

SP - 358

EP - 360

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

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