Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

C. Obermuller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldman, Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    15 Citations (Scopus)

    Abstract

    We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga0.9In0.1As quantum dots. This was achieved by scanning a metal coated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope.
    Original languageEnglish
    Pages (from-to)358-360
    Number of pages3
    JournalApplied Physics Letters
    Volume75
    Issue number3
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    quantum dots
    confining
    scanning
    optical microscopes
    near fields
    optical fibers
    quantum wells
    shear
    photoluminescence
    metals

    Cite this

    Obermuller, C., Deisenrieder, A., Abstreiter, G., Karrai, K., Grosse, S., Manus, S., ... Ahopelto, J. (1999). Mechanical nanomanipulation of single strain-induced semiconductor quantum dots. Applied Physics Letters, 75(3), 358-360. https://doi.org/10.1063/1.124374
    Obermuller, C. ; Deisenrieder, A. ; Abstreiter, G. ; Karrai, K. ; Grosse, S. ; Manus, S. ; Feldman, J. ; Lipsanen, Harri ; Sopanen, Markku ; Ahopelto, Jouni. / Mechanical nanomanipulation of single strain-induced semiconductor quantum dots. In: Applied Physics Letters. 1999 ; Vol. 75, No. 3. pp. 358-360.
    @article{e35d5eda0b2949eab068b7023b87024c,
    title = "Mechanical nanomanipulation of single strain-induced semiconductor quantum dots",
    abstract = "We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga0.9In0.1As quantum dots. This was achieved by scanning a metal coated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope.",
    author = "C. Obermuller and A. Deisenrieder and G. Abstreiter and K. Karrai and S. Grosse and S. Manus and J. Feldman and Harri Lipsanen and Markku Sopanen and Jouni Ahopelto",
    year = "1999",
    doi = "10.1063/1.124374",
    language = "English",
    volume = "75",
    pages = "358--360",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    number = "3",

    }

    Obermuller, C, Deisenrieder, A, Abstreiter, G, Karrai, K, Grosse, S, Manus, S, Feldman, J, Lipsanen, H, Sopanen, M & Ahopelto, J 1999, 'Mechanical nanomanipulation of single strain-induced semiconductor quantum dots', Applied Physics Letters, vol. 75, no. 3, pp. 358-360. https://doi.org/10.1063/1.124374

    Mechanical nanomanipulation of single strain-induced semiconductor quantum dots. / Obermuller, C.; Deisenrieder, A.; Abstreiter, G.; Karrai, K.; Grosse, S.; Manus, S.; Feldman, J.; Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni.

    In: Applied Physics Letters, Vol. 75, No. 3, 1999, p. 358-360.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

    AU - Obermuller, C.

    AU - Deisenrieder, A.

    AU - Abstreiter, G.

    AU - Karrai, K.

    AU - Grosse, S.

    AU - Manus, S.

    AU - Feldman, J.

    AU - Lipsanen, Harri

    AU - Sopanen, Markku

    AU - Ahopelto, Jouni

    PY - 1999

    Y1 - 1999

    N2 - We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga0.9In0.1As quantum dots. This was achieved by scanning a metal coated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope.

    AB - We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga0.9In0.1As quantum dots. This was achieved by scanning a metal coated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope.

    U2 - 10.1063/1.124374

    DO - 10.1063/1.124374

    M3 - Article

    VL - 75

    SP - 358

    EP - 360

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 3

    ER -

    Obermuller C, Deisenrieder A, Abstreiter G, Karrai K, Grosse S, Manus S et al. Mechanical nanomanipulation of single strain-induced semiconductor quantum dots. Applied Physics Letters. 1999;75(3):358-360. https://doi.org/10.1063/1.124374