Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

C. Obermuller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldman, Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

15 Citations (Scopus)

Abstract

We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga0.9In0.1As quantum dots. This was achieved by scanning a metal coated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope.
Original languageEnglish
Pages (from-to)358-360
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number3
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

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quantum dots
confining
scanning
optical microscopes
near fields
optical fibers
quantum wells
shear
photoluminescence
metals

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Obermuller, C., Deisenrieder, A., Abstreiter, G., Karrai, K., Grosse, S., Manus, S., ... Ahopelto, J. (1999). Mechanical nanomanipulation of single strain-induced semiconductor quantum dots. Applied Physics Letters, 75(3), 358-360. https://doi.org/10.1063/1.124374
Obermuller, C. ; Deisenrieder, A. ; Abstreiter, G. ; Karrai, K. ; Grosse, S. ; Manus, S. ; Feldman, J. ; Lipsanen, Harri ; Sopanen, Markku ; Ahopelto, Jouni. / Mechanical nanomanipulation of single strain-induced semiconductor quantum dots. In: Applied Physics Letters. 1999 ; Vol. 75, No. 3. pp. 358-360.
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title = "Mechanical nanomanipulation of single strain-induced semiconductor quantum dots",
abstract = "We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga0.9In0.1As quantum dots. This was achieved by scanning a metal coated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope.",
author = "C. Obermuller and A. Deisenrieder and G. Abstreiter and K. Karrai and S. Grosse and S. Manus and J. Feldman and Harri Lipsanen and Markku Sopanen and Jouni Ahopelto",
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Obermuller, C, Deisenrieder, A, Abstreiter, G, Karrai, K, Grosse, S, Manus, S, Feldman, J, Lipsanen, H, Sopanen, M & Ahopelto, J 1999, 'Mechanical nanomanipulation of single strain-induced semiconductor quantum dots', Applied Physics Letters, vol. 75, no. 3, pp. 358-360. https://doi.org/10.1063/1.124374

Mechanical nanomanipulation of single strain-induced semiconductor quantum dots. / Obermuller, C.; Deisenrieder, A.; Abstreiter, G.; Karrai, K.; Grosse, S.; Manus, S.; Feldman, J.; Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni.

In: Applied Physics Letters, Vol. 75, No. 3, 1999, p. 358-360.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

AU - Obermuller, C.

AU - Deisenrieder, A.

AU - Abstreiter, G.

AU - Karrai, K.

AU - Grosse, S.

AU - Manus, S.

AU - Feldman, J.

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Ahopelto, Jouni

PY - 1999

Y1 - 1999

N2 - We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga0.9In0.1As quantum dots. This was achieved by scanning a metal coated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope.

AB - We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga0.9In0.1As quantum dots. This was achieved by scanning a metal coated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope.

U2 - 10.1063/1.124374

DO - 10.1063/1.124374

M3 - Article

VL - 75

SP - 358

EP - 360

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

ER -

Obermuller C, Deisenrieder A, Abstreiter G, Karrai K, Grosse S, Manus S et al. Mechanical nanomanipulation of single strain-induced semiconductor quantum dots. Applied Physics Letters. 1999;75(3):358-360. https://doi.org/10.1063/1.124374