Mechanically induced Si layer transfer in hydrogen-implanted Si wafers

Kimmo Henttinen, Ilkka Suni, Silvanus Lau

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Mechanically induced layer transfer of single-crystal silicon by hydrogen ion implantation, low-temperature wafer bonding, and subsequent mechanical splitting of the implanted wafer has been investigated. The bond strength measurements using the crack opening method in room environment yield a surface energy of ⩾2000 mJ/m2 after exposure to oxygen plasma and subsequent hydrophilic silicon/silicon dioxide bonding at 200 °C. Mechanically induced layer transfer was carried out for silicon wafers implanted to a dose of 5×1016 H2/cm2 at 100 keV and annealed for 2 h at 200 °C. No feature was observed by atomic force microscopy (AFM) measurements on the unbonded free surface after this heat treatment. For lower doses of implantation, annealing at higher temperatures is required to enable the mechanical transfer. AFM measurements on the split silicon surface indicate that low-temperature wafer bonding and mechanical transfer yield a root mean square surface roughness of 4 nm which is less than in the standard Smart-Cut® process.
Original languageEnglish
Pages (from-to)2370 - 2372
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number17
DOIs
Publication statusPublished - 2000
MoE publication typeA1 Journal article-refereed

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wafers
silicon
hydrogen
atomic force microscopy
dosage
oxygen plasma
hydrogen ions
surface energy
rooms
ion implantation
implantation
surface roughness
heat treatment
cracks
silicon dioxide
annealing
single crystals

Cite this

Henttinen, Kimmo ; Suni, Ilkka ; Lau, Silvanus. / Mechanically induced Si layer transfer in hydrogen-implanted Si wafers. In: Applied Physics Letters. 2000 ; Vol. 76, No. 17. pp. 2370 - 2372.
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abstract = "Mechanically induced layer transfer of single-crystal silicon by hydrogen ion implantation, low-temperature wafer bonding, and subsequent mechanical splitting of the implanted wafer has been investigated. The bond strength measurements using the crack opening method in room environment yield a surface energy of ⩾2000 mJ/m2 after exposure to oxygen plasma and subsequent hydrophilic silicon/silicon dioxide bonding at 200 °C. Mechanically induced layer transfer was carried out for silicon wafers implanted to a dose of 5×1016 H2/cm2 at 100 keV and annealed for 2 h at 200 °C. No feature was observed by atomic force microscopy (AFM) measurements on the unbonded free surface after this heat treatment. For lower doses of implantation, annealing at higher temperatures is required to enable the mechanical transfer. AFM measurements on the split silicon surface indicate that low-temperature wafer bonding and mechanical transfer yield a root mean square surface roughness of 4 nm which is less than in the standard Smart-Cut{\circledR} process.",
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Mechanically induced Si layer transfer in hydrogen-implanted Si wafers. / Henttinen, Kimmo; Suni, Ilkka; Lau, Silvanus.

In: Applied Physics Letters, Vol. 76, No. 17, 2000, p. 2370 - 2372.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Mechanically induced Si layer transfer in hydrogen-implanted Si wafers

AU - Henttinen, Kimmo

AU - Suni, Ilkka

AU - Lau, Silvanus

PY - 2000

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N2 - Mechanically induced layer transfer of single-crystal silicon by hydrogen ion implantation, low-temperature wafer bonding, and subsequent mechanical splitting of the implanted wafer has been investigated. The bond strength measurements using the crack opening method in room environment yield a surface energy of ⩾2000 mJ/m2 after exposure to oxygen plasma and subsequent hydrophilic silicon/silicon dioxide bonding at 200 °C. Mechanically induced layer transfer was carried out for silicon wafers implanted to a dose of 5×1016 H2/cm2 at 100 keV and annealed for 2 h at 200 °C. No feature was observed by atomic force microscopy (AFM) measurements on the unbonded free surface after this heat treatment. For lower doses of implantation, annealing at higher temperatures is required to enable the mechanical transfer. AFM measurements on the split silicon surface indicate that low-temperature wafer bonding and mechanical transfer yield a root mean square surface roughness of 4 nm which is less than in the standard Smart-Cut® process.

AB - Mechanically induced layer transfer of single-crystal silicon by hydrogen ion implantation, low-temperature wafer bonding, and subsequent mechanical splitting of the implanted wafer has been investigated. The bond strength measurements using the crack opening method in room environment yield a surface energy of ⩾2000 mJ/m2 after exposure to oxygen plasma and subsequent hydrophilic silicon/silicon dioxide bonding at 200 °C. Mechanically induced layer transfer was carried out for silicon wafers implanted to a dose of 5×1016 H2/cm2 at 100 keV and annealed for 2 h at 200 °C. No feature was observed by atomic force microscopy (AFM) measurements on the unbonded free surface after this heat treatment. For lower doses of implantation, annealing at higher temperatures is required to enable the mechanical transfer. AFM measurements on the split silicon surface indicate that low-temperature wafer bonding and mechanical transfer yield a root mean square surface roughness of 4 nm which is less than in the standard Smart-Cut® process.

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