Mechanistic investigation of ZnO nanowire growth

Simas Rackauskas (Corresponding Author), Albert G. Nasibulin (Corresponding Author), Hua Jiang, Ying Tian, Gintare Statkute, Sergey D. Shandakov, Harri Lipsanen, Esko I. Kauppinen

Research output: Contribution to journalArticleScientificpeer-review

33 Citations (Scopus)

Abstract

ZnO nanowire (NW) growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zinc interstitials and vacancies in a ZnO layer, which should be also considered in other synthesis techniques and mechanisms. The mechanism of the ZnO NW growth was explained as due to the advantageous diffusion through grain boundaries in ZnO layer and crystal defects in NWs. Additionally, on the basis of photoluminescence measurements, a feasible application of as-produced wires for optoelectronic devices was demonstrated.
Original languageEnglish
Article number183114
Number of pages3
JournalApplied Physics Letters
Volume95
Issue number18
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

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nanowires
synthesis
optoelectronic devices
crystal defects
interstitials
grain boundaries
zinc
wire
photoluminescence
defects

Cite this

Rackauskas, S., Nasibulin, A. G., Jiang, H., Tian, Y., Statkute, G., Shandakov, S. D., ... Kauppinen, E. I. (2009). Mechanistic investigation of ZnO nanowire growth. Applied Physics Letters, 95(18), [183114]. https://doi.org/10.1063/1.3258074
Rackauskas, Simas ; Nasibulin, Albert G. ; Jiang, Hua ; Tian, Ying ; Statkute, Gintare ; Shandakov, Sergey D. ; Lipsanen, Harri ; Kauppinen, Esko I. / Mechanistic investigation of ZnO nanowire growth. In: Applied Physics Letters. 2009 ; Vol. 95, No. 18.
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Rackauskas, S, Nasibulin, AG, Jiang, H, Tian, Y, Statkute, G, Shandakov, SD, Lipsanen, H & Kauppinen, EI 2009, 'Mechanistic investigation of ZnO nanowire growth', Applied Physics Letters, vol. 95, no. 18, 183114. https://doi.org/10.1063/1.3258074

Mechanistic investigation of ZnO nanowire growth. / Rackauskas, Simas (Corresponding Author); Nasibulin, Albert G. (Corresponding Author); Jiang, Hua; Tian, Ying; Statkute, Gintare; Shandakov, Sergey D.; Lipsanen, Harri; Kauppinen, Esko I.

In: Applied Physics Letters, Vol. 95, No. 18, 183114, 2009.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Rackauskas, Simas

AU - Nasibulin, Albert G.

AU - Jiang, Hua

AU - Tian, Ying

AU - Statkute, Gintare

AU - Shandakov, Sergey D.

AU - Lipsanen, Harri

AU - Kauppinen, Esko I.

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AB - ZnO nanowire (NW) growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zinc interstitials and vacancies in a ZnO layer, which should be also considered in other synthesis techniques and mechanisms. The mechanism of the ZnO NW growth was explained as due to the advantageous diffusion through grain boundaries in ZnO layer and crystal defects in NWs. Additionally, on the basis of photoluminescence measurements, a feasible application of as-produced wires for optoelectronic devices was demonstrated.

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Rackauskas S, Nasibulin AG, Jiang H, Tian Y, Statkute G, Shandakov SD et al. Mechanistic investigation of ZnO nanowire growth. Applied Physics Letters. 2009;95(18). 183114. https://doi.org/10.1063/1.3258074