Melting of the charge-ordered state under substantially lower magnetic field in structurally improved Pr1-xCaxMnO3 (x=0.3-0.5) thin films

T. Elovaara, T. Ahlqvist, S. Majumdar, H. Huhtinen, P. Paturi

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)

Abstract

We report melting of the charge-ordered state in low bandwidth manganite PCMO (x=0.3–0.5) thin films under substantially lower magnetic field. Two different in situ post-deposition annealing conditions were applied on the PCMO thin films grown by pulsed laser deposition at a deposition temperature of 500 °C, which is significantly lower compared to the traditional deposition temperature for complex oxides. Thorough structural and magnetic characterization of these two films show improved crystalline and magnetic properties in PCMO thin films annealed at a lower temperature that leads to stronger ferromagnetic interaction at the cost of charge- and orbital-ordered states. In these structurally improved film a larger irreversible metamagnetic transition can be observed and the onset magnetic field required to melt the charge-ordered state reduces to only around 2 T at 70 K temperature in the sample with x=0.4 and nearly around 2.5 T for x=0.5. Additionally, the in situ post-deposition annealing at 500 °C decreases the insulator–metal transition about 2.5 T when compared to the samples annealed at 700 °C. Therefore, a larger colossal magnetoresistance effect is observed under a moderate value of applied magnetic field in these PCMO films with better crystalline order. This result is of extreme importance for the future generation of oxide electronics using phase-change property of strongly correlated materials.
Original languageEnglish
Pages (from-to)194-202
JournalJournal of Magnetism and Magnetic Materials
Volume381
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

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Melting
melting
Magnetic fields
Thin films
thin films
magnetic fields
Oxides
Colossal magnetoresistance
Annealing
Crystalline materials
Temperature
annealing
oxides
Pulsed laser deposition
pulsed laser deposition
temperature
Magnetic properties
Electronic equipment
magnetic properties
bandwidth

Cite this

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title = "Melting of the charge-ordered state under substantially lower magnetic field in structurally improved Pr1-xCaxMnO3 (x=0.3-0.5) thin films",
abstract = "We report melting of the charge-ordered state in low bandwidth manganite PCMO (x=0.3–0.5) thin films under substantially lower magnetic field. Two different in situ post-deposition annealing conditions were applied on the PCMO thin films grown by pulsed laser deposition at a deposition temperature of 500 °C, which is significantly lower compared to the traditional deposition temperature for complex oxides. Thorough structural and magnetic characterization of these two films show improved crystalline and magnetic properties in PCMO thin films annealed at a lower temperature that leads to stronger ferromagnetic interaction at the cost of charge- and orbital-ordered states. In these structurally improved film a larger irreversible metamagnetic transition can be observed and the onset magnetic field required to melt the charge-ordered state reduces to only around 2 T at 70 K temperature in the sample with x=0.4 and nearly around 2.5 T for x=0.5. Additionally, the in situ post-deposition annealing at 500 °C decreases the insulator–metal transition about 2.5 T when compared to the samples annealed at 700 °C. Therefore, a larger colossal magnetoresistance effect is observed under a moderate value of applied magnetic field in these PCMO films with better crystalline order. This result is of extreme importance for the future generation of oxide electronics using phase-change property of strongly correlated materials.",
author = "T. Elovaara and T. Ahlqvist and S. Majumdar and H. Huhtinen and P. Paturi",
year = "2015",
doi = "10.1016/j.jmmm.2014.12.082",
language = "English",
volume = "381",
pages = "194--202",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",

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Melting of the charge-ordered state under substantially lower magnetic field in structurally improved Pr1-xCaxMnO3 (x=0.3-0.5) thin films. / Elovaara, T.; Ahlqvist, T.; Majumdar, S.; Huhtinen, H.; Paturi, P.

In: Journal of Magnetism and Magnetic Materials, Vol. 381, 2015, p. 194-202.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Melting of the charge-ordered state under substantially lower magnetic field in structurally improved Pr1-xCaxMnO3 (x=0.3-0.5) thin films

AU - Elovaara, T.

AU - Ahlqvist, T.

AU - Majumdar, S.

AU - Huhtinen, H.

AU - Paturi, P.

PY - 2015

Y1 - 2015

N2 - We report melting of the charge-ordered state in low bandwidth manganite PCMO (x=0.3–0.5) thin films under substantially lower magnetic field. Two different in situ post-deposition annealing conditions were applied on the PCMO thin films grown by pulsed laser deposition at a deposition temperature of 500 °C, which is significantly lower compared to the traditional deposition temperature for complex oxides. Thorough structural and magnetic characterization of these two films show improved crystalline and magnetic properties in PCMO thin films annealed at a lower temperature that leads to stronger ferromagnetic interaction at the cost of charge- and orbital-ordered states. In these structurally improved film a larger irreversible metamagnetic transition can be observed and the onset magnetic field required to melt the charge-ordered state reduces to only around 2 T at 70 K temperature in the sample with x=0.4 and nearly around 2.5 T for x=0.5. Additionally, the in situ post-deposition annealing at 500 °C decreases the insulator–metal transition about 2.5 T when compared to the samples annealed at 700 °C. Therefore, a larger colossal magnetoresistance effect is observed under a moderate value of applied magnetic field in these PCMO films with better crystalline order. This result is of extreme importance for the future generation of oxide electronics using phase-change property of strongly correlated materials.

AB - We report melting of the charge-ordered state in low bandwidth manganite PCMO (x=0.3–0.5) thin films under substantially lower magnetic field. Two different in situ post-deposition annealing conditions were applied on the PCMO thin films grown by pulsed laser deposition at a deposition temperature of 500 °C, which is significantly lower compared to the traditional deposition temperature for complex oxides. Thorough structural and magnetic characterization of these two films show improved crystalline and magnetic properties in PCMO thin films annealed at a lower temperature that leads to stronger ferromagnetic interaction at the cost of charge- and orbital-ordered states. In these structurally improved film a larger irreversible metamagnetic transition can be observed and the onset magnetic field required to melt the charge-ordered state reduces to only around 2 T at 70 K temperature in the sample with x=0.4 and nearly around 2.5 T for x=0.5. Additionally, the in situ post-deposition annealing at 500 °C decreases the insulator–metal transition about 2.5 T when compared to the samples annealed at 700 °C. Therefore, a larger colossal magnetoresistance effect is observed under a moderate value of applied magnetic field in these PCMO films with better crystalline order. This result is of extreme importance for the future generation of oxide electronics using phase-change property of strongly correlated materials.

U2 - 10.1016/j.jmmm.2014.12.082

DO - 10.1016/j.jmmm.2014.12.082

M3 - Article

VL - 381

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EP - 202

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

ER -