Keyphrases
Back-end-of-line
100%
Area Ratio
100%
Ferroelectric Field-effect Transistor (FeFET)
100%
Memory States
100%
State Dynamics
100%
Charge Injection
60%
Ferroelectric Polarization
40%
Si-based
20%
Non-volatile Memory
20%
Dynamic State
20%
Top Electrode
20%
Electric Field Distribution
20%
Writing Process
20%
Memory Application
20%
Memory Design
20%
Fast Operation
20%
Potentiation
20%
Ferroelectric Capacitor
20%
MOSFET
20%
Voltage Pulse
20%
Si MOSFET
20%
FET Devices
20%
Pulse Train
20%
Ferroelectric Metal
20%
Reduced Voltage
20%
Critical Design Parameters
20%
Ratio Optimization
20%
Threshold Voltage Modulation
20%
INIS
dynamics
100%
ferroelectric materials
100%
voltage
42%
charges
42%
injection
42%
design
28%
pulses
28%
metals
28%
polarization
28%
mosfet
28%
applications
14%
devices
14%
optimization
14%
stability
14%
operation
14%
distribution
14%
retention
14%
modulation
14%
volatility
14%
electrodes
14%
electric fields
14%
capacitors
14%
trains
14%
silicon oxides
14%
Computer Science
Back End
100%
Critical Design
50%
Application Memory
50%
Non-Volatile Memory
50%
Design Parameter
50%
Threshold Voltage
50%
Optimisation Ratio
50%
Field Distribution
50%
Memory Design
50%
Material Science
Ferroelectric Material
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
28%
Field Effect Transistors
28%
Capacitor
14%