MEMS Fabry-Perot interferometer based spectral sensors for industrial applications

Anna Rissanen, Claudio Avila, Bin Guo, Uula Kantojärvi, Matti Tammi, Richard Bourne, Frans Muller

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)


    This presentation gives an overview of recent advances in the 1st- and 2nd generation MEMS FPI processes for near- and mid- infrared (NIR-MIR) wavelength sensing applications for automotive- and process industry. The measured values for the 1st generation NIR MEMS FPI devices for λ = 1.5 – 2.0 µm show FWHM = 15 nm at the optimization wavelength of 1750 nm. The 2nd generation MEMS process for produced devices for NIR λ = 1.9 – 2.5 µm (FWHM = 17nm) and MIR λ = 2.9 – 3.6 µm (FWHM = 22nm). A novel NIR sensor based on the 2nd generation MEMS FPI chips has been realized. The developed sensors are being validated for application in process control. Preliminary results show good signal levels, which allow following the status of esterification process.
    Original languageEnglish
    Title of host publicationImaging and Applied Optics, IAO 2017
    PublisherOptical Society of America OSA
    ISBN (Print)978-1-943580-29-3
    Publication statusPublished - 1 Jan 2017
    MoE publication typeA4 Article in a conference publication
    EventImaging and Applied Optics, IAO 2017 - San Francisco, United States
    Duration: 26 Jun 201729 Jun 2017

    Publication series

    SeriesOSA Technical Digest
    NumberF45-IAO 2017


    ConferenceImaging and Applied Optics, IAO 2017
    Abbreviated titleIAO 2017
    Country/TerritoryUnited States
    CitySan Francisco


    • Automotive
    • Fabry-Perot interferometer
    • Gas sensing
    • Microspectrometers
    • MOEMS
    • NIR - MIR
    • OtaNano


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