Abstract
| Original language | English |
|---|---|
| Title of host publication | Imaging and Applied Optics, IAO 2017 |
| Publisher | Optical Society of America OSA |
| Volume | Part F45-IAO 2017 |
| ISBN (Electronic) | 9781557528209 |
| ISBN (Print) | 978-1-943580-29-3 |
| DOIs | |
| Publication status | Published - 1 Jan 2017 |
| MoE publication type | A4 Article in a conference publication |
| Event | Imaging and Applied Optics, IAO 2017 - San Francisco, United States Duration: 26 Jun 2017 → 29 Jun 2017 |
Conference
| Conference | Imaging and Applied Optics, IAO 2017 |
|---|---|
| Abbreviated title | IAO 2017 |
| Country | United States |
| City | San Francisco |
| Period | 26/06/17 → 29/06/17 |
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Keywords
- Automotive
- Fabry-Perot interferometer
- Gas sensing
- Microspectrometers
- MOEMS
- NIR - MIR
Cite this
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MEMS Fabry-Perot interferometer based spectral sensors for industrial applications. / Rissanen, Anna; Avila, Claudio; Guo, Bin; Kantojärvi, Uula; Tammi, Matti; Bourne, Richard; Muller, Frans.
Imaging and Applied Optics, IAO 2017. Vol. Part F45-IAO 2017 Optical Society of America OSA, 2017. ATu1A.1.Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review
TY - GEN
T1 - MEMS Fabry-Perot interferometer based spectral sensors for industrial applications
AU - Rissanen, Anna
AU - Avila, Claudio
AU - Guo, Bin
AU - Kantojärvi, Uula
AU - Tammi, Matti
AU - Bourne, Richard
AU - Muller, Frans
PY - 2017/1/1
Y1 - 2017/1/1
N2 - This presentation gives an overview of recent advances in the 1st- and 2nd generation MEMS FPI processes for near- and mid- infrared (NIR-MIR) wavelength sensing applications for automotive- and process industry. The measured values for the 1st generation NIR MEMS FPI devices for λ = 1.5 – 2.0 µm show FWHM = 15 nm at the optimization wavelength of 1750 nm. The 2nd generation MEMS process for produced devices for NIR λ = 1.9 – 2.5 µm (FWHM = 17nm) and MIR λ = 2.9 – 3.6 µm (FWHM = 22nm). A novel NIR sensor based on the 2nd generation MEMS FPI chips has been realized. The developed sensors are being validated for application in process control. Preliminary results show good signal levels, which allow following the status of esterification process.
AB - This presentation gives an overview of recent advances in the 1st- and 2nd generation MEMS FPI processes for near- and mid- infrared (NIR-MIR) wavelength sensing applications for automotive- and process industry. The measured values for the 1st generation NIR MEMS FPI devices for λ = 1.5 – 2.0 µm show FWHM = 15 nm at the optimization wavelength of 1750 nm. The 2nd generation MEMS process for produced devices for NIR λ = 1.9 – 2.5 µm (FWHM = 17nm) and MIR λ = 2.9 – 3.6 µm (FWHM = 22nm). A novel NIR sensor based on the 2nd generation MEMS FPI chips has been realized. The developed sensors are being validated for application in process control. Preliminary results show good signal levels, which allow following the status of esterification process.
KW - Automotive
KW - Fabry-Perot interferometer
KW - Gas sensing
KW - Microspectrometers
KW - MOEMS
KW - NIR - MIR
UR - http://www.scopus.com/inward/record.url?scp=85026244011&partnerID=8YFLogxK
U2 - 10.1364/AIO.2017.ATu1A.1
DO - 10.1364/AIO.2017.ATu1A.1
M3 - Conference article in proceedings
SN - 978-1-943580-29-3
VL - Part F45-IAO 2017
BT - Imaging and Applied Optics, IAO 2017
PB - Optical Society of America OSA
ER -