MEMS tuning and matching circuits, and millimeter wave on-wafer measurements

Disssertation

Research output: ThesisDissertationCollection of Articles

2 Citations (Scopus)

Abstract

The focus of this thesis is on the development of on-wafer measurement techniques for millimeter wave device and circuit characterization as well as on the development of MEMS based impedance tuning circuits both for measurement and telecommunication applications. Work done in this thesis is presented with eight scientific articles written by the author. The summary of the thesis introduces the field of on-wafer measurements and impedance tuning methods, and is followed by the articles. Wide-band on-wafer measurement systems have been developed for noise parameter measurement at room temperature at W-band, and for cryogenic S-parameter measurements at 50-110 GHz and 20-295 K. Using the developed systems, noise parameters of an InP HEMT have been measured and results are shown in the frequency band of 79-94 GHz. These are the first published noise parameter measurement results for an active device at W-band, and first on-wafer measurement results at cryogenic conditions and at 50-110 GHz. Novel RF MEMS impedance tuners have been developed for instrumentation and measurement applications to improve measurement automation and accuracy in on-wafer measurements. Several integrated impedance tuners have been realized to cover 6-120 GHz frequency range. RF MEMS technology has also been used for reconfigurable matching networks. Reconfigurable distributed 4-18 GHz and 30-50 GHz matching networks have been designed, fabricated, and characterized. These are based on switched 4 or 8 MEMS capacitors producing 16 or 256 different impedances. The matching networks are ideal for multi-band and wide impedance range amplifier as well as for antenna matching and tuning applications. Both the tuners and matching networks have shown state-of-the-art performance for circuits realized with integrated circuit technologies.
Original languageEnglish
QualificationDoctor Degree
Awarding Institution
  • Aalto University
Supervisors/Advisors
  • Tuovinen, Jussi, Supervisor, External person
Award date27 Mar 2006
Place of PublicationEspoo
Publisher
Print ISBNs951-38-6704-8
Electronic ISBNs951-38-6705-6
Publication statusPublished - 2006
MoE publication typeG5 Doctoral dissertation (article)

Fingerprint

Millimeter waves
MEMS
Tuning
Networks (circuits)
Tuners
Cryogenics
Millimeter wave devices
Scattering parameters
High electron mobility transistors
Frequency bands
Telecommunication
Integrated circuits
Capacitors
Automation
Antennas

Keywords

  • RF MEMS
  • on-wafer measuring techniques
  • millimeter wave devices
  • impedance tuning
  • instrumentation
  • noise parameter measurements
  • reconfigurable matching networks
  • W-band measurement
  • double-stub tuners
  • triple-stub tuners
  • amplifier applications

Cite this

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title = "MEMS tuning and matching circuits, and millimeter wave on-wafer measurements: Disssertation",
abstract = "The focus of this thesis is on the development of on-wafer measurement techniques for millimeter wave device and circuit characterization as well as on the development of MEMS based impedance tuning circuits both for measurement and telecommunication applications. Work done in this thesis is presented with eight scientific articles written by the author. The summary of the thesis introduces the field of on-wafer measurements and impedance tuning methods, and is followed by the articles. Wide-band on-wafer measurement systems have been developed for noise parameter measurement at room temperature at W-band, and for cryogenic S-parameter measurements at 50-110 GHz and 20-295 K. Using the developed systems, noise parameters of an InP HEMT have been measured and results are shown in the frequency band of 79-94 GHz. These are the first published noise parameter measurement results for an active device at W-band, and first on-wafer measurement results at cryogenic conditions and at 50-110 GHz. Novel RF MEMS impedance tuners have been developed for instrumentation and measurement applications to improve measurement automation and accuracy in on-wafer measurements. Several integrated impedance tuners have been realized to cover 6-120 GHz frequency range. RF MEMS technology has also been used for reconfigurable matching networks. Reconfigurable distributed 4-18 GHz and 30-50 GHz matching networks have been designed, fabricated, and characterized. These are based on switched 4 or 8 MEMS capacitors producing 16 or 256 different impedances. The matching networks are ideal for multi-band and wide impedance range amplifier as well as for antenna matching and tuning applications. Both the tuners and matching networks have shown state-of-the-art performance for circuits realized with integrated circuit technologies.",
keywords = "RF MEMS, on-wafer measuring techniques, millimeter wave devices, impedance tuning, instrumentation, noise parameter measurements, reconfigurable matching networks, W-band measurement, double-stub tuners, triple-stub tuners, amplifier applications",
author = "Tauno V{\"a}h{\"a}-Heikkil{\"a}",
year = "2006",
language = "English",
isbn = "951-38-6704-8",
series = "VTT Publications",
publisher = "VTT Technical Research Centre of Finland",
number = "596",
address = "Finland",
school = "Aalto University",

}

MEMS tuning and matching circuits, and millimeter wave on-wafer measurements : Disssertation. / Vähä-Heikkilä, Tauno.

Espoo : VTT Technical Research Centre of Finland, 2006. 165 p.

Research output: ThesisDissertationCollection of Articles

TY - THES

T1 - MEMS tuning and matching circuits, and millimeter wave on-wafer measurements

T2 - Disssertation

AU - Vähä-Heikkilä, Tauno

PY - 2006

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N2 - The focus of this thesis is on the development of on-wafer measurement techniques for millimeter wave device and circuit characterization as well as on the development of MEMS based impedance tuning circuits both for measurement and telecommunication applications. Work done in this thesis is presented with eight scientific articles written by the author. The summary of the thesis introduces the field of on-wafer measurements and impedance tuning methods, and is followed by the articles. Wide-band on-wafer measurement systems have been developed for noise parameter measurement at room temperature at W-band, and for cryogenic S-parameter measurements at 50-110 GHz and 20-295 K. Using the developed systems, noise parameters of an InP HEMT have been measured and results are shown in the frequency band of 79-94 GHz. These are the first published noise parameter measurement results for an active device at W-band, and first on-wafer measurement results at cryogenic conditions and at 50-110 GHz. Novel RF MEMS impedance tuners have been developed for instrumentation and measurement applications to improve measurement automation and accuracy in on-wafer measurements. Several integrated impedance tuners have been realized to cover 6-120 GHz frequency range. RF MEMS technology has also been used for reconfigurable matching networks. Reconfigurable distributed 4-18 GHz and 30-50 GHz matching networks have been designed, fabricated, and characterized. These are based on switched 4 or 8 MEMS capacitors producing 16 or 256 different impedances. The matching networks are ideal for multi-band and wide impedance range amplifier as well as for antenna matching and tuning applications. Both the tuners and matching networks have shown state-of-the-art performance for circuits realized with integrated circuit technologies.

AB - The focus of this thesis is on the development of on-wafer measurement techniques for millimeter wave device and circuit characterization as well as on the development of MEMS based impedance tuning circuits both for measurement and telecommunication applications. Work done in this thesis is presented with eight scientific articles written by the author. The summary of the thesis introduces the field of on-wafer measurements and impedance tuning methods, and is followed by the articles. Wide-band on-wafer measurement systems have been developed for noise parameter measurement at room temperature at W-band, and for cryogenic S-parameter measurements at 50-110 GHz and 20-295 K. Using the developed systems, noise parameters of an InP HEMT have been measured and results are shown in the frequency band of 79-94 GHz. These are the first published noise parameter measurement results for an active device at W-band, and first on-wafer measurement results at cryogenic conditions and at 50-110 GHz. Novel RF MEMS impedance tuners have been developed for instrumentation and measurement applications to improve measurement automation and accuracy in on-wafer measurements. Several integrated impedance tuners have been realized to cover 6-120 GHz frequency range. RF MEMS technology has also been used for reconfigurable matching networks. Reconfigurable distributed 4-18 GHz and 30-50 GHz matching networks have been designed, fabricated, and characterized. These are based on switched 4 or 8 MEMS capacitors producing 16 or 256 different impedances. The matching networks are ideal for multi-band and wide impedance range amplifier as well as for antenna matching and tuning applications. Both the tuners and matching networks have shown state-of-the-art performance for circuits realized with integrated circuit technologies.

KW - RF MEMS

KW - on-wafer measuring techniques

KW - millimeter wave devices

KW - impedance tuning

KW - instrumentation

KW - noise parameter measurements

KW - reconfigurable matching networks

KW - W-band measurement

KW - double-stub tuners

KW - triple-stub tuners

KW - amplifier applications

M3 - Dissertation

SN - 951-38-6704-8

T3 - VTT Publications

PB - VTT Technical Research Centre of Finland

CY - Espoo

ER -