MEMS tuning and matching circuits, and millimeter wave on-wafer measurements: Disssertation

The focus of this thesis is on the development of on-wafer measurement techniques for millimeter wave device and circuit characterization as well as on the development of MEMS based impedance tuning circuits both for measurement and telecommunication applications. Work done in this thesis is presented with eight scientific articles written by the author. The summary of the thesis introduces the field of on-wafer measurements and impedance tuning methods, and is followed by the articles. Wide-band on-wafer measurement systems have been developed for noise parameter measurement at room temperature at W-band, and for cryogenic S-parameter measurements at 50-110 GHz and 20-295 K. Using the developed systems, noise parameters of an InP HEMT have been measured and results are shown in the frequency band of 79-94 GHz. These are the first published noise parameter measurement results for an active device at W-band, and first on-wafer measurement results at cryogenic conditions and at 50-110 GHz. Novel RF MEMS impedance tuners have been developed for instrumentation and measurement applications to improve measurement automation and accuracy in on-wafer measurements. Several integrated impedance tuners have been realized to cover 6-120 GHz frequency range. RF MEMS technology has also been used for reconfigurable matching networks. Reconfigurable distributed 4-18 GHz and 30-50 GHz matching networks have been designed, fabricated, and characterized. These are based on switched 4 or 8 MEMS capacitors producing 16 or 256 different impedances. The matching networks are ideal for multi-band and wide impedance range amplifier as well as for antenna matching and tuning applications. Both the tuners and matching networks have shown state-of-the-art performance for circuits realized with integrated circuit technologies.