Metal contacts on InN: Proposal for Schottky contact

Victor-Tapio Rangel-Kuoppa; Sami Suihkonen; Markku Sopanen; Harri Lipsanen

doi:10.1143/JJAP.45.36

Metal contacts on InN: Proposal for Schottky contact

Victor-Tapio Rangel-Kuoppa, Sami Suihkonen, Markku Sopanen, Harri Lipsanen

Not published at VTT

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

Several metal contacts (Au, Ag, Pt, Pd, Cu, Ni, Ge, Ti, Cr, and Al) were tested on Metalorganic vapour phase epitaxy (MOVPE)-grown InN. Current-voltage (I-V) measurements were carried out. Most of the metals showed ohmic behavior. Pt and Ge yielded some Schottky contact behavior, but were very unstable. Al formed a stable rectifying contact after thermal annealing over 500°C. Several annealing temperatures and times were studied. The rectifying behavior is explained in terms of N atoms reacting with In and Al to form a layer of AlInN, which has a larger band gap than InN. 10.1143/JJAP.45.36 ©2006 The Japan Society of Applied Physics.

Original language	English
Pages (from-to)	36-39
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	1R
DOIs	https://doi.org/10.1143/JJAP.45.36
Publication status	Published - 10 Jan 2006
MoE publication type	A1 Journal article-refereed

Keywords

Annealing
InN
Metal contact
Ohmic behavior
Rectifying behavior
Schottky contact

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10.1143/JJAP.45.36

Cite this

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title = "Metal contacts on InN: Proposal for Schottky contact",

abstract = "Several metal contacts (Au, Ag, Pt, Pd, Cu, Ni, Ge, Ti, Cr, and Al) were tested on Metalorganic vapour phase epitaxy (MOVPE)-grown InN. Current-voltage (I-V) measurements were carried out. Most of the metals showed ohmic behavior. Pt and Ge yielded some Schottky contact behavior, but were very unstable. Al formed a stable rectifying contact after thermal annealing over 500°C. Several annealing temperatures and times were studied. The rectifying behavior is explained in terms of N atoms reacting with In and Al to form a layer of AlInN, which has a larger band gap than InN. 10.1143/JJAP.45.36 {\textcopyright}2006 The Japan Society of Applied Physics.",

keywords = "Annealing, InN, Metal contact, Ohmic behavior, Rectifying behavior, Schottky contact",

author = "Victor-Tapio Rangel-Kuoppa and Sami Suihkonen and Markku Sopanen and Harri Lipsanen",

year = "2006",

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TY - JOUR

T1 - Metal contacts on InN

T2 - Proposal for Schottky contact

AU - Rangel-Kuoppa, Victor-Tapio

AU - Suihkonen, Sami

AU - Sopanen, Markku

AU - Lipsanen, Harri

PY - 2006/1/10

Y1 - 2006/1/10

N2 - Several metal contacts (Au, Ag, Pt, Pd, Cu, Ni, Ge, Ti, Cr, and Al) were tested on Metalorganic vapour phase epitaxy (MOVPE)-grown InN. Current-voltage (I-V) measurements were carried out. Most of the metals showed ohmic behavior. Pt and Ge yielded some Schottky contact behavior, but were very unstable. Al formed a stable rectifying contact after thermal annealing over 500°C. Several annealing temperatures and times were studied. The rectifying behavior is explained in terms of N atoms reacting with In and Al to form a layer of AlInN, which has a larger band gap than InN. 10.1143/JJAP.45.36 ©2006 The Japan Society of Applied Physics.

AB - Several metal contacts (Au, Ag, Pt, Pd, Cu, Ni, Ge, Ti, Cr, and Al) were tested on Metalorganic vapour phase epitaxy (MOVPE)-grown InN. Current-voltage (I-V) measurements were carried out. Most of the metals showed ohmic behavior. Pt and Ge yielded some Schottky contact behavior, but were very unstable. Al formed a stable rectifying contact after thermal annealing over 500°C. Several annealing temperatures and times were studied. The rectifying behavior is explained in terms of N atoms reacting with In and Al to form a layer of AlInN, which has a larger band gap than InN. 10.1143/JJAP.45.36 ©2006 The Japan Society of Applied Physics.

KW - Annealing

KW - InN

KW - Metal contact

KW - Ohmic behavior

KW - Rectifying behavior

KW - Schottky contact

UR - https://www.scopus.com/pages/publications/31544437177

U2 - 10.1143/JJAP.45.36

DO - 10.1143/JJAP.45.36

M3 - Article

SN - 0021-4922

VL - 45

SP - 36

EP - 39

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 1R

ER -

Metal contacts on InN: Proposal for Schottky contact

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Keywords

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