Metal fluoride thin films prepared by atomic layer deposition

Markku Ylilammi, Timo Ranta-aho

    Research output: Contribution to journalArticleScientificpeer-review

    47 Citations (Scopus)

    Abstract

    CaF2, SrF2, and ZnF2 thin films have been deposited on glass substrates for the first time using atomic layer deposition (ALD) at temperatures between 260 and 400°C. The source materials used are alkaline earth β‐diketonates, zinc acetate dihydrate, and hydrogen fluoride in nitrogen atmosphere. The growth rate of films varies from 20 to 90 pm/cycle depending on materials and temperature. The crystallinity, orientation, stoichiometry, atomic density, optical and electrical properties together with growth properties of the films have been characterized. Also, multilayer structures with alternating materials of high ZnS and low (fluoride) index of refraction have been prepared by ALD.
    Original languageEnglish
    Pages (from-to)1278-1284
    Number of pages7
    JournalJournal of the Electrochemical Society
    Volume141
    Issue number5
    DOIs
    Publication statusPublished - 1994
    MoE publication typeA1 Journal article-refereed

      Fingerprint

    Cite this