Metal fluoride thin films prepared by atomic layer deposition

Markku Ylilammi; Timo Ranta-aho

doi:10.1149/1.2054910

Metal fluoride thin films prepared by atomic layer deposition

Markku Ylilammi, Timo Ranta-aho

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Abstract

CaF₂, SrF₂, and ZnF₂ thin films have been deposited on glass substrates for the first time using atomic layer deposition (ALD) at temperatures between 260 and 400°C. The source materials used are alkaline earth β‐diketonates, zinc acetate dihydrate, and hydrogen fluoride in nitrogen atmosphere. The growth rate of films varies from 20 to 90 pm/cycle depending on materials and temperature. The crystallinity, orientation, stoichiometry, atomic density, optical and electrical properties together with growth properties of the films have been characterized. Also, multilayer structures with alternating materials of high ZnS and low (fluoride) index of refraction have been prepared by ALD.

Original language	English
Pages (from-to)	1278-1284
Number of pages	7
Journal	Journal of the Electrochemical Society
Volume	141
Issue number	5
DOIs	https://doi.org/10.1149/1.2054910
Publication status	Published - 1994
MoE publication type	A1 Journal article-refereed

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abstract = "CaF2, SrF2, and ZnF2 thin films have been deposited on glass substrates for the first time using atomic layer deposition (ALD) at temperatures between 260 and 400°C. The source materials used are alkaline earth β‐diketonates, zinc acetate dihydrate, and hydrogen fluoride in nitrogen atmosphere. The growth rate of films varies from 20 to 90 pm/cycle depending on materials and temperature. The crystallinity, orientation, stoichiometry, atomic density, optical and electrical properties together with growth properties of the films have been characterized. Also, multilayer structures with alternating materials of high ZnS and low (fluoride) index of refraction have been prepared by ALD.",

author = "Markku Ylilammi and Timo Ranta-aho",

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AU - Ylilammi, Markku

AU - Ranta-aho, Timo

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N2 - CaF2, SrF2, and ZnF2 thin films have been deposited on glass substrates for the first time using atomic layer deposition (ALD) at temperatures between 260 and 400°C. The source materials used are alkaline earth β‐diketonates, zinc acetate dihydrate, and hydrogen fluoride in nitrogen atmosphere. The growth rate of films varies from 20 to 90 pm/cycle depending on materials and temperature. The crystallinity, orientation, stoichiometry, atomic density, optical and electrical properties together with growth properties of the films have been characterized. Also, multilayer structures with alternating materials of high ZnS and low (fluoride) index of refraction have been prepared by ALD.

AB - CaF2, SrF2, and ZnF2 thin films have been deposited on glass substrates for the first time using atomic layer deposition (ALD) at temperatures between 260 and 400°C. The source materials used are alkaline earth β‐diketonates, zinc acetate dihydrate, and hydrogen fluoride in nitrogen atmosphere. The growth rate of films varies from 20 to 90 pm/cycle depending on materials and temperature. The crystallinity, orientation, stoichiometry, atomic density, optical and electrical properties together with growth properties of the films have been characterized. Also, multilayer structures with alternating materials of high ZnS and low (fluoride) index of refraction have been prepared by ALD.

U2 - 10.1149/1.2054910

DO - 10.1149/1.2054910

M3 - Article

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VL - 141

SP - 1278

EP - 1284

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 5

ER -

Metal fluoride thin films prepared by atomic layer deposition

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