Metal fluoride thin films prepared by atomic layer deposition

Markku Ylilammi, Timo Ranta-aho

Research output: Contribution to journalArticleScientificpeer-review

44 Citations (Scopus)

Abstract

CaF2, SrF2, and ZnF2 thin films have been deposited on glass substrates for the first time using atomic layer deposition (ALD) at temperatures between 260 and 400°C. The source materials used are alkaline earth β‐diketonates, zinc acetate dihydrate, and hydrogen fluoride in nitrogen atmosphere. The growth rate of films varies from 20 to 90 pm/cycle depending on materials and temperature. The crystallinity, orientation, stoichiometry, atomic density, optical and electrical properties together with growth properties of the films have been characterized. Also, multilayer structures with alternating materials of high ZnS and low (fluoride) index of refraction have been prepared by ALD.
Original languageEnglish
Pages (from-to)1278-1284
Number of pages7
JournalJournal of the Electrochemical Society
Volume141
Issue number5
DOIs
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

Fingerprint

Atomic layer deposition
Fluorides
Metals
Thin films
Zinc Acetate
Hydrofluoric Acid
Refraction
Stoichiometry
Multilayers
Electric properties
Zinc
Nitrogen
Optical properties
Earth (planet)
Glass
Hydrogen
Temperature
Substrates

Cite this

Ylilammi, Markku ; Ranta-aho, Timo. / Metal fluoride thin films prepared by atomic layer deposition. In: Journal of the Electrochemical Society. 1994 ; Vol. 141, No. 5. pp. 1278-1284.
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Metal fluoride thin films prepared by atomic layer deposition. / Ylilammi, Markku; Ranta-aho, Timo.

In: Journal of the Electrochemical Society, Vol. 141, No. 5, 1994, p. 1278-1284.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Metal fluoride thin films prepared by atomic layer deposition

AU - Ylilammi, Markku

AU - Ranta-aho, Timo

N1 - Project code: ele3003

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AB - CaF2, SrF2, and ZnF2 thin films have been deposited on glass substrates for the first time using atomic layer deposition (ALD) at temperatures between 260 and 400°C. The source materials used are alkaline earth β‐diketonates, zinc acetate dihydrate, and hydrogen fluoride in nitrogen atmosphere. The growth rate of films varies from 20 to 90 pm/cycle depending on materials and temperature. The crystallinity, orientation, stoichiometry, atomic density, optical and electrical properties together with growth properties of the films have been characterized. Also, multilayer structures with alternating materials of high ZnS and low (fluoride) index of refraction have been prepared by ALD.

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DO - 10.1149/1.2054910

M3 - Article

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JO - Journal of the Electrochemical Society

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