Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabrication

Kristina Bespalova; Glenn Ross; Sami Suihkonen; Mervi Paulasto-Kröckel

doi:10.1002/aelm.202300628

Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabrication

Kristina Bespalova, Glenn Ross^*, Sami Suihkonen, Mervi Paulasto-Kröckel

^*Corresponding author for this work

Not published at VTT

Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Abstract

Aluminum nitride (AlN) grown on vertical surfaces can be utilized for the fabrication of advanced piezoelectric microelectromechanical systems (MEMS). The in-plane motion of the parts of a MEMS element is possible when AlN is deposited on the vertical surfaces of the moving structure. For the best device performance, AlN must have high crystal quality, uniform coverage of the vertical sidewalls, and c-axis crystalline orientation perpendicular to the plane of a vertical surface. The impact of the surface roughness (Rq) of the vertical sidewalls formed in Si using wet and dry etching methods on the crystal quality, crystallographic orientation, and uniformity of the metalorganic chemical vapor deposited (MOCVD) AlN thin films is studied in this paper. In both cases, AlN films demonstrated full sidewall coverage and grew crystalline in the c-axis direction. AlN films grown on vertical Si surfaces achieved using anisotropic wet etching are highly crystalline and oriented in [0001] direction, while the films grown on vertical surfaces achieved using dry etching displayed a lower level of alignment with the Si sidewalls.

Original language	English
Article number	2300628
Journal	Advanced Electronic Materials
Volume	10
Issue number	4
DOIs	https://doi.org/10.1002/aelm.202300628
Publication status	Published - 15 Jan 2024
MoE publication type	A1 Journal article-refereed

Funding

This work has been carried out as part of ECSEL18 Project NewControl, which receives funding within the Electronic Components and Systems for European Leadership Joint Undertaking (ESCEL JU) in collaboration with the European Union's Horizon2020 Framework Programme and National Authorities, under grant agreement №. 826653‐2. The authors would like to acknowledge the Innovation Funding Agency Business Finland for their financial support. The authors acknowledge the provision of facilities and technical support of Aalto University at OtaNano Nanomicroscopy Center (Aalto‐NMC). K.B. acknowledges support from the HPY Research Foundation, Foundation of Electronics Engineers (Elektroniikkainsinöörien Säätiö), and Walter Ahlström foundation.

Keywords

aluminum nitride (AlN)
MOCVD
surface roughness
thin film
vertical sidewall

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Cite this

@article{4901f1ad3cfe4adb9018ce5a6a468a74,

title = "Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabrication",

abstract = "Aluminum nitride (AlN) grown on vertical surfaces can be utilized for the fabrication of advanced piezoelectric microelectromechanical systems (MEMS). The in-plane motion of the parts of a MEMS element is possible when AlN is deposited on the vertical surfaces of the moving structure. For the best device performance, AlN must have high crystal quality, uniform coverage of the vertical sidewalls, and c-axis crystalline orientation perpendicular to the plane of a vertical surface. The impact of the surface roughness (Rq) of the vertical sidewalls formed in Si using wet and dry etching methods on the crystal quality, crystallographic orientation, and uniformity of the metalorganic chemical vapor deposited (MOCVD) AlN thin films is studied in this paper. In both cases, AlN films demonstrated full sidewall coverage and grew crystalline in the c-axis direction. AlN films grown on vertical Si surfaces achieved using anisotropic wet etching are highly crystalline and oriented in [0001] direction, while the films grown on vertical surfaces achieved using dry etching displayed a lower level of alignment with the Si sidewalls.",

keywords = "aluminum nitride (AlN), MOCVD, surface roughness, thin film, vertical sidewall",

author = "Kristina Bespalova and Glenn Ross and Sami Suihkonen and Mervi Paulasto-Kr{\"o}ckel",

note = "Publisher Copyright: {\textcopyright} 2024 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.",

year = "2024",

month = jan,

day = "15",

doi = "10.1002/aelm.202300628",

language = "English",

volume = "10",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-VCH Verlag",

number = "4",

}

TY - JOUR

T1 - Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabrication

AU - Bespalova, Kristina

AU - Ross, Glenn

AU - Suihkonen, Sami

AU - Paulasto-Kröckel, Mervi

PY - 2024/1/15

Y1 - 2024/1/15

N2 - Aluminum nitride (AlN) grown on vertical surfaces can be utilized for the fabrication of advanced piezoelectric microelectromechanical systems (MEMS). The in-plane motion of the parts of a MEMS element is possible when AlN is deposited on the vertical surfaces of the moving structure. For the best device performance, AlN must have high crystal quality, uniform coverage of the vertical sidewalls, and c-axis crystalline orientation perpendicular to the plane of a vertical surface. The impact of the surface roughness (Rq) of the vertical sidewalls formed in Si using wet and dry etching methods on the crystal quality, crystallographic orientation, and uniformity of the metalorganic chemical vapor deposited (MOCVD) AlN thin films is studied in this paper. In both cases, AlN films demonstrated full sidewall coverage and grew crystalline in the c-axis direction. AlN films grown on vertical Si surfaces achieved using anisotropic wet etching are highly crystalline and oriented in [0001] direction, while the films grown on vertical surfaces achieved using dry etching displayed a lower level of alignment with the Si sidewalls.

AB - Aluminum nitride (AlN) grown on vertical surfaces can be utilized for the fabrication of advanced piezoelectric microelectromechanical systems (MEMS). The in-plane motion of the parts of a MEMS element is possible when AlN is deposited on the vertical surfaces of the moving structure. For the best device performance, AlN must have high crystal quality, uniform coverage of the vertical sidewalls, and c-axis crystalline orientation perpendicular to the plane of a vertical surface. The impact of the surface roughness (Rq) of the vertical sidewalls formed in Si using wet and dry etching methods on the crystal quality, crystallographic orientation, and uniformity of the metalorganic chemical vapor deposited (MOCVD) AlN thin films is studied in this paper. In both cases, AlN films demonstrated full sidewall coverage and grew crystalline in the c-axis direction. AlN films grown on vertical Si surfaces achieved using anisotropic wet etching are highly crystalline and oriented in [0001] direction, while the films grown on vertical surfaces achieved using dry etching displayed a lower level of alignment with the Si sidewalls.

KW - aluminum nitride (AlN)

KW - MOCVD

KW - surface roughness

KW - thin film

KW - vertical sidewall

U2 - 10.1002/aelm.202300628

DO - 10.1002/aelm.202300628

M3 - Article

SN - 2199-160X

VL - 10

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 4

M1 - 2300628

ER -

Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabrication

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