Method for characterization of Si waveguide propagation loss.

Michele Moresco, Marco Romagnoli, Stefano Boscolo, Michele Midrio, Matteo Cherchi, Ehsan Shah Hosseini, Douglas Coolbaugh, Michael R Watts, Birendra Dutt

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Abstract

A new method for measuring waveguide propagation loss in silicon nanowires is presented. This method, based on the interplay between traveling ring modes and standing wave modes due to back-scattering from edge roughness, is accurate and can be used for on wafer measurement of test structures. Examples of loss measurements and fitting are reported.
Original languageEnglish
Pages (from-to)5391-400
JournalOptics Express
Volume21
Issue number5
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

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Moresco, M., Romagnoli, M., Boscolo, S., Midrio, M., Cherchi, M., Hosseini, E. S., Coolbaugh, D., Watts, M. R., & Dutt, B. (2013). Method for characterization of Si waveguide propagation loss. Optics Express, 21(5), 5391-400. https://doi.org/10.1364/OE.21.005391