A new method for measuring waveguide propagation loss in silicon nanowires is presented. This method, based on the interplay between traveling ring modes and standing wave modes due to back-scattering from edge roughness, is accurate and can be used for on wafer measurement of test structures. Examples of loss measurements and fitting are reported.
Moresco, M., Romagnoli, M., Boscolo, S., Midrio, M., Cherchi, M., Hosseini, E. S., Coolbaugh, D., Watts, M. R., & Dutt, B. (2013). Method for characterization of Si waveguide propagation loss. Optics Express, 21(5), 5391-400. https://doi.org/10.1364/OE.21.005391