Abstract
A new method for measuring waveguide propagation loss in silicon nanowires is presented. This method, based on the interplay between traveling ring modes and standing wave modes due to back-scattering from edge roughness, is accurate and can be used for on wafer measurement of test structures. Examples of loss measurements and fitting are reported.
Original language | English |
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Pages (from-to) | 5391-400 |
Journal | Optics Express |
Volume | 21 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2013 |
MoE publication type | A1 Journal article-refereed |