Method for characterization of Si waveguide propagation loss.

Michele Moresco; Marco Romagnoli; Stefano Boscolo; Michele Midrio; Matteo Cherchi; Ehsan Shah Hosseini; Douglas Coolbaugh; Michael R Watts; Birendra Dutt

doi:10.1364/OE.21.005391

Method for characterization of Si waveguide propagation loss.

Michele Moresco
, Marco Romagnoli
, Stefano Boscolo
, Michele Midrio
, Matteo Cherchi
, Ehsan Shah Hosseini
, Douglas Coolbaugh
, Michael R Watts
, Birendra Dutt

Not published at VTT

MIT Massachusetts Institute of Technology
University of Udine
State University of New York System (SUNY)

Research output: Contribution to journal › Article › Scientific › peer-review

24 Citations (Scopus)

Abstract

A new method for measuring waveguide propagation loss in silicon nanowires is presented. This method, based on the interplay between traveling ring modes and standing wave modes due to back-scattering from edge roughness, is accurate and can be used for on wafer measurement of test structures. Examples of loss measurements and fitting are reported.

Original language	English
Pages (from-to)	5391-400
Journal	Optics Express
Volume	21
Issue number	5
DOIs	https://doi.org/10.1364/OE.21.005391
Publication status	Published - 2013
MoE publication type	A1 Journal article-refereed

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10.1364/OE.21.005391

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title = "Method for characterization of Si waveguide propagation loss.",

abstract = "A new method for measuring waveguide propagation loss in silicon nanowires is presented. This method, based on the interplay between traveling ring modes and standing wave modes due to back-scattering from edge roughness, is accurate and can be used for on wafer measurement of test structures. Examples of loss measurements and fitting are reported.",

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AU - Moresco, Michele

AU - Romagnoli, Marco

AU - Boscolo, Stefano

AU - Midrio, Michele

AU - Cherchi, Matteo

AU - Hosseini, Ehsan Shah

AU - Coolbaugh, Douglas

AU - Watts, Michael R

AU - Dutt, Birendra

PY - 2013

Y1 - 2013

N2 - A new method for measuring waveguide propagation loss in silicon nanowires is presented. This method, based on the interplay between traveling ring modes and standing wave modes due to back-scattering from edge roughness, is accurate and can be used for on wafer measurement of test structures. Examples of loss measurements and fitting are reported.

AB - A new method for measuring waveguide propagation loss in silicon nanowires is presented. This method, based on the interplay between traveling ring modes and standing wave modes due to back-scattering from edge roughness, is accurate and can be used for on wafer measurement of test structures. Examples of loss measurements and fitting are reported.

U2 - 10.1364/OE.21.005391

DO - 10.1364/OE.21.005391

M3 - Article

C2 - 23482110

SN - 1094-4087

VL - 21

SP - 5391

EP - 5400

JO - Optics Express

JF - Optics Express

IS - 5

ER -

Method for characterization of Si waveguide propagation loss.

Abstract

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