Method for forming a cavity structure on soi substrate and cavity structure formed on soi substrate

Jyrki Kiihamaeki (Inventor)

Research output: PatentPatent

Abstract

The present publication discloses a method for forming cavities in prefabricated silicon wafers comprising a first silicon layer ( 1 ), a second monocrystalline silicon layer, or a so-called structural layer ( 3 ), oriented substantially parallel with said first silicon layer ( 1 ) and an insulating layer ( 2 ) situated between said first and second layers ( 1, 3 ). According to the method, in at least one of the conducting silicon layers ( 1, 3 ) are fabricated windows ( 4 ) extending through the thickness of the layer, and cavities are etched in the insulating layer ( 2 ) by means of etchants passed to the layer via said fabricated windows ( 4 ). According to the invention, subsequent to the fabrication step of the windows ( 4 ) and prior to the etching step, a thin porous layer ( 5 ) is formed on the surface to be processed such that the etchants can be passed through said porous layer into said cavities ( 6 ) being etched and, after the cavities ( 6 ) are etched ready, at least one supplementary layer ( 7 ) is deposited in order to render to the material of said porous layer impermeable to gases

Patent family as of 26.8.2021
CN1288724 C 20061206 CN20028019431 20020927
CN1561539 A 20050105 CN20028019431 20020927
DE60245733 D1 20140102 DE20026045733 20020927
EP1433199 A1 20040630 EP20020764899 2002092
EP1433199 B1 20131106 EP20020764899 20020927
FI114755 B 20041215 FI20010001922 20011001
FI20011922 A 20030402 FI20010001922 20011001
FI20011922 A0 20011001 FI20010001922 20011001
HK1072497 A1 20050826 HK20050105143 20050621
HK1072497 A3 20050826 HK20050105143 20050621
HK1072497 B 20070518 HK20050105143 20050621
JP2005504644 T2 20050217 JP20030533331T 20020927
KR100889115 B1 20090316 KR20047004728 20020927
KR20040037218 A 20040504 KR20047004728 20020927
US6930366 BB 20050816 US20020491193 20020927
US2004248376 AA 20041209 US20040491193 20040331
WO03030234 A1 20030410 WO2002FI00772 2002092

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Original languageEnglish
Patent numberEP1433199
IPCH01L 27/ 12 A I
Priority date27/09/02
Publication statusPublished - 30 Jun 2004
MoE publication typeH1 Granted patent

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