Abstract
The present invention relates to a method for manufacturing an acceleration sensor. In the method, thin SOI-wafer structures are used, in which grooves are etched, the walls of which are oxidized. A thick layer of electrode material, covering all other material, is grown on top of the structures, after which the surface is ground and polished chemo-mechanically, thin release holes are etched in the structure, structural patterns are formed, and finally etching using a hydrofluoric acid solution is performed to release the structures intended to move and to open a capacitive gap.
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Link to current patent family on right
| Original language | English |
|---|---|
| Patent number | US2009206423 |
| IPC | H01L 21/ 306 A I |
| Priority date | 2/06/06 |
| Publication status | Published - 20 Aug 2009 |
| MoE publication type | H1 Granted patent |