Abstract
A thin film transistor device comprises an organic semiconductor layer (504), a source electrode (502) and a drain electrode (503). The source and drain electrodes are coupled to each other through the organic semiconductor layer (504). Additionally there is a gate electrode (506) and a dielectric layer (505) between the organic semiconductor layer (504) and the gate electrode (506). The dielectric layer (505) is made of a hygroscopic polymer and arranged to allow humidity absorbed in the dielectric layer (505) to enhance the operation of the thin film transistor device through ionic effects.
Original language | English |
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Patent number | WO2006097566 A1 |
Filing date | 18/03/05 |
Publication status | Published - 21 Sept 2006 |
MoE publication type | Not Eligible |