MHEMT G-band low-noise amplifiers

M. Kärkkäinen, Mikko Kantanen, S. Caujolle-Bert, M. Varonen, R. Weber, A. Leuther, M. Seelmann-Eggebert, T. Närhi, K.A.I. Halonen

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.
    Original languageEnglish
    Pages (from-to)459-468
    JournalIEEE Transactions on Terahertz Science and Technology
    Volume4
    Issue number4
    DOIs
    Publication statusPublished - 2014
    MoE publication typeNot Eligible

    Fingerprint

    Low noise amplifiers
    low noise
    amplifiers
    Noise figure
    High electron mobility transistors
    sounding
    high electron mobility transistors
    high gain
    Water vapor
    water vapor
    humidity
    Atmospheric humidity
    chips
    atmospheres

    Keywords

    • millimeter wave integrated circuits
    • low-noise amplifiers
    • MMIC amplifiers
    • metamorphic HEMT

    Cite this

    Kärkkäinen, M., Kantanen, M., Caujolle-Bert, S., Varonen, M., Weber, R., Leuther, A., ... Halonen, K. A. I. (2014). MHEMT G-band low-noise amplifiers. IEEE Transactions on Terahertz Science and Technology, 4(4), 459-468. https://doi.org/10.1109/TTHZ.2014.2327383
    Kärkkäinen, M. ; Kantanen, Mikko ; Caujolle-Bert, S. ; Varonen, M. ; Weber, R. ; Leuther, A. ; Seelmann-Eggebert, M. ; Närhi, T. ; Halonen, K.A.I. / MHEMT G-band low-noise amplifiers. In: IEEE Transactions on Terahertz Science and Technology. 2014 ; Vol. 4, No. 4. pp. 459-468.
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    title = "MHEMT G-band low-noise amplifiers",
    abstract = "To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.",
    keywords = "millimeter wave integrated circuits, low-noise amplifiers, MMIC amplifiers, metamorphic HEMT",
    author = "M. K{\"a}rkk{\"a}inen and Mikko Kantanen and S. Caujolle-Bert and M. Varonen and R. Weber and A. Leuther and M. Seelmann-Eggebert and T. N{\"a}rhi and K.A.I. Halonen",
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    Kärkkäinen, M, Kantanen, M, Caujolle-Bert, S, Varonen, M, Weber, R, Leuther, A, Seelmann-Eggebert, M, Närhi, T & Halonen, KAI 2014, 'MHEMT G-band low-noise amplifiers', IEEE Transactions on Terahertz Science and Technology, vol. 4, no. 4, pp. 459-468. https://doi.org/10.1109/TTHZ.2014.2327383

    MHEMT G-band low-noise amplifiers. / Kärkkäinen, M.; Kantanen, Mikko; Caujolle-Bert, S.; Varonen, M.; Weber, R.; Leuther, A.; Seelmann-Eggebert, M.; Närhi, T.; Halonen, K.A.I.

    In: IEEE Transactions on Terahertz Science and Technology, Vol. 4, No. 4, 2014, p. 459-468.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - MHEMT G-band low-noise amplifiers

    AU - Kärkkäinen, M.

    AU - Kantanen, Mikko

    AU - Caujolle-Bert, S.

    AU - Varonen, M.

    AU - Weber, R.

    AU - Leuther, A.

    AU - Seelmann-Eggebert, M.

    AU - Närhi, T.

    AU - Halonen, K.A.I.

    N1 - Project code: 28178

    PY - 2014

    Y1 - 2014

    N2 - To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.

    AB - To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.

    KW - millimeter wave integrated circuits

    KW - low-noise amplifiers

    KW - MMIC amplifiers

    KW - metamorphic HEMT

    U2 - 10.1109/TTHZ.2014.2327383

    DO - 10.1109/TTHZ.2014.2327383

    M3 - Article

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    EP - 468

    JO - IEEE Transactions on Terahertz Science and Technology

    JF - IEEE Transactions on Terahertz Science and Technology

    SN - 2156-342X

    IS - 4

    ER -

    Kärkkäinen M, Kantanen M, Caujolle-Bert S, Varonen M, Weber R, Leuther A et al. MHEMT G-band low-noise amplifiers. IEEE Transactions on Terahertz Science and Technology. 2014;4(4):459-468. https://doi.org/10.1109/TTHZ.2014.2327383