MHEMT G-band low-noise amplifiers

Mikko Kärkkäinen; Mikko Kantanen; Sylvain Caujolle-Bert; Mikko Varonen; Rainer Weber; Arnulf Leuther; Matthias Seelmann-Eggebert; Ari Alanne; Petri Jukkala; Tapani Närhi; Kari A.I. Halonen

doi:10.1109/TTHZ.2014.2327383

MHEMT G-band low-noise amplifiers

Mikko Kärkkäinen, Mikko Kantanen, Sylvain Caujolle-Bert, Mikko Varonen, Rainer Weber, Arnulf Leuther, Matthias Seelmann-Eggebert, Ari Alanne, Petri Jukkala, Tapani Närhi, Kari A.I. Halonen

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Abstract

To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.

Original language	English
Pages (from-to)	459-468
Journal	IEEE Transactions on Terahertz Science and Technology
Volume	4
Issue number	4
DOIs	https://doi.org/10.1109/TTHZ.2014.2327383
Publication status	Published - 2014
MoE publication type	Not Eligible

Keywords

millimeter wave integrated circuits
low-noise amplifiers
MMIC amplifiers
metamorphic HEMT

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10.1109/TTHZ.2014.2327383

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@article{904ccd72db564310822e5ff23bb94755,

title = "MHEMT G-band low-noise amplifiers",

abstract = "To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.",

keywords = "millimeter wave integrated circuits, low-noise amplifiers, MMIC amplifiers, metamorphic HEMT",

author = "Mikko K{\"a}rkk{\"a}inen and Mikko Kantanen and Sylvain Caujolle-Bert and Mikko Varonen and Rainer Weber and Arnulf Leuther and Matthias Seelmann-Eggebert and Ari Alanne and Petri Jukkala and Tapani N{\"a}rhi and Halonen, {Kari A.I.}",

note = "Project code: 28178",

year = "2014",

doi = "10.1109/TTHZ.2014.2327383",

language = "English",

volume = "4",

pages = "459--468",

journal = "IEEE Transactions on Terahertz Science and Technology",

issn = "2156-342X",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

number = "4",

}

TY - JOUR

T1 - MHEMT G-band low-noise amplifiers

AU - Kärkkäinen, Mikko

AU - Kantanen, Mikko

AU - Caujolle-Bert, Sylvain

AU - Varonen, Mikko

AU - Weber, Rainer

AU - Leuther, Arnulf

AU - Seelmann-Eggebert, Matthias

AU - Alanne, Ari

AU - Jukkala, Petri

AU - Närhi, Tapani

AU - Halonen, Kari A.I.

N1 - Project code: 28178

PY - 2014

Y1 - 2014

N2 - To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.

AB - To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.

KW - millimeter wave integrated circuits

KW - low-noise amplifiers

KW - MMIC amplifiers

KW - metamorphic HEMT

U2 - 10.1109/TTHZ.2014.2327383

DO - 10.1109/TTHZ.2014.2327383

M3 - Article

SN - 2156-342X

VL - 4

SP - 459

EP - 468

JO - IEEE Transactions on Terahertz Science and Technology

JF - IEEE Transactions on Terahertz Science and Technology

IS - 4

ER -

MHEMT G-band low-noise amplifiers

Abstract

Keywords

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