MHEMT G-band low-noise amplifiers

M. Kärkkäinen, Mikko Kantanen, S. Caujolle-Bert, M. Varonen, R. Weber, A. Leuther, M. Seelmann-Eggebert, T. Närhi, K.A.I. Halonen

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.
Original languageEnglish
Pages (from-to)459-468
JournalIEEE Transactions on Terahertz Science and Technology
Volume4
Issue number4
DOIs
Publication statusPublished - 2014
MoE publication typeNot Eligible

Fingerprint

Low noise amplifiers
low noise
amplifiers
Noise figure
High electron mobility transistors
sounding
high electron mobility transistors
high gain
Water vapor
water vapor
humidity
Atmospheric humidity
chips
atmospheres

Keywords

  • millimeter wave integrated circuits
  • low-noise amplifiers
  • MMIC amplifiers
  • metamorphic HEMT

Cite this

Kärkkäinen, M., Kantanen, M., Caujolle-Bert, S., Varonen, M., Weber, R., Leuther, A., ... Halonen, K. A. I. (2014). MHEMT G-band low-noise amplifiers. IEEE Transactions on Terahertz Science and Technology, 4(4), 459-468. https://doi.org/10.1109/TTHZ.2014.2327383
Kärkkäinen, M. ; Kantanen, Mikko ; Caujolle-Bert, S. ; Varonen, M. ; Weber, R. ; Leuther, A. ; Seelmann-Eggebert, M. ; Närhi, T. ; Halonen, K.A.I. / MHEMT G-band low-noise amplifiers. In: IEEE Transactions on Terahertz Science and Technology. 2014 ; Vol. 4, No. 4. pp. 459-468.
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title = "MHEMT G-band low-noise amplifiers",
abstract = "To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.",
keywords = "millimeter wave integrated circuits, low-noise amplifiers, MMIC amplifiers, metamorphic HEMT",
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Kärkkäinen, M, Kantanen, M, Caujolle-Bert, S, Varonen, M, Weber, R, Leuther, A, Seelmann-Eggebert, M, Närhi, T & Halonen, KAI 2014, 'MHEMT G-band low-noise amplifiers', IEEE Transactions on Terahertz Science and Technology, vol. 4, no. 4, pp. 459-468. https://doi.org/10.1109/TTHZ.2014.2327383

MHEMT G-band low-noise amplifiers. / Kärkkäinen, M.; Kantanen, Mikko; Caujolle-Bert, S.; Varonen, M.; Weber, R.; Leuther, A.; Seelmann-Eggebert, M.; Närhi, T.; Halonen, K.A.I.

In: IEEE Transactions on Terahertz Science and Technology, Vol. 4, No. 4, 2014, p. 459-468.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - MHEMT G-band low-noise amplifiers

AU - Kärkkäinen, M.

AU - Kantanen, Mikko

AU - Caujolle-Bert, S.

AU - Varonen, M.

AU - Weber, R.

AU - Leuther, A.

AU - Seelmann-Eggebert, M.

AU - Närhi, T.

AU - Halonen, K.A.I.

N1 - Project code: 28178

PY - 2014

Y1 - 2014

N2 - To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.

AB - To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.

KW - millimeter wave integrated circuits

KW - low-noise amplifiers

KW - MMIC amplifiers

KW - metamorphic HEMT

U2 - 10.1109/TTHZ.2014.2327383

DO - 10.1109/TTHZ.2014.2327383

M3 - Article

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SP - 459

EP - 468

JO - IEEE Transactions on Terahertz Science and Technology

JF - IEEE Transactions on Terahertz Science and Technology

SN - 2156-342X

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Kärkkäinen M, Kantanen M, Caujolle-Bert S, Varonen M, Weber R, Leuther A et al. MHEMT G-band low-noise amplifiers. IEEE Transactions on Terahertz Science and Technology. 2014;4(4):459-468. https://doi.org/10.1109/TTHZ.2014.2327383