To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.
|Journal||IEEE Transactions on Terahertz Science and Technology|
|Publication status||Published - 2014|
|MoE publication type||Not Eligible|
- millimeter wave integrated circuits
- low-noise amplifiers
- MMIC amplifiers
- metamorphic HEMT