MHEMT G-band low-noise amplifiers

M. Kärkkäinen, Mikko Kantanen, S. Caujolle-Bert, M. Varonen, R. Weber, A. Leuther, M. Seelmann-Eggebert, T. Närhi, K.A.I. Halonen

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    Abstract

    To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.
    Original languageEnglish
    Pages (from-to)459-468
    JournalIEEE Transactions on Terahertz Science and Technology
    Volume4
    Issue number4
    DOIs
    Publication statusPublished - 2014
    MoE publication typeNot Eligible

    Keywords

    • millimeter wave integrated circuits
    • low-noise amplifiers
    • MMIC amplifiers
    • metamorphic HEMT

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  • Cite this

    Kärkkäinen, M., Kantanen, M., Caujolle-Bert, S., Varonen, M., Weber, R., Leuther, A., Seelmann-Eggebert, M., Närhi, T., & Halonen, K. A. I. (2014). MHEMT G-band low-noise amplifiers. IEEE Transactions on Terahertz Science and Technology, 4(4), 459-468. https://doi.org/10.1109/TTHZ.2014.2327383