Abstract
We demonstrate a sub-terahertz (THz) and THz integration platform based on micromachined waveguides on silicon. The demonstrated components in the frequency range 225–325 GHz include waveguides, filters, waveguide vias, and low-loss transitions between the waveguide and the monolithic integrated circuits. The developed process relies on microelectromechanical systems manufacturing methods and silicon wafer substrates, promising a scalable and cost-efficient system integration method for future sub-THz and THz communication and sensing applications. Low-temperature Au/In thermo-compression and Au–Au laser bonding processes are parts of the integration platform enabling integration of millimeter-wave monolithic integrated circuits.
Original language | English |
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Pages (from-to) | 651-659 |
Number of pages | 9 |
Journal | International Journal of Microwave and Wireless Technologies |
Volume | 10 |
Issue number | 56 |
DOIs | |
Publication status | Published - 1 Jun 2018 |
MoE publication type | A1 Journal article-refereed |
Keywords
- Hybrid and multi-chip modules
- micromachining
- Si-based devices and IC technologies
- OtaNano