We demonstrate a sub-terahertz (THz) and THz integration platform based on micromachined waveguides on silicon. The demonstrated components in the frequency range 225–325 GHz include waveguides, filters, waveguide vias, and low-loss transitions between the waveguide and the monolithic integrated circuits. The developed process relies on microelectromechanical systems manufacturing methods and silicon wafer substrates, promising a scalable and cost-efficient system integration method for future sub-THz and THz communication and sensing applications. Low-temperature Au/In thermo-compression and Au–Au laser bonding processes are parts of the integration platform enabling integration of millimeter-wave monolithic integrated circuits.
|Number of pages||9|
|Journal||International Journal of Microwave and Wireless Technologies|
|Publication status||Published - 1 Jun 2018|
|MoE publication type||A1 Journal article-refereed|
- Hybrid and multi-chip modules
- Si-based devices and IC technologies