Micromachining integration platform for sub-terahertz and terahertz systems

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

We demonstrate a sub-terahertz (THz) and THz integration platform based on micromachined waveguides on silicon. The demonstrated components in the frequency range 225–325 GHz include waveguides, filters, waveguide vias, and low-loss transitions between the waveguide and the monolithic integrated circuits. The developed process relies on microelectromechanical systems manufacturing methods and silicon wafer substrates, promising a scalable and cost-efficient system integration method for future sub-THz and THz communication and sensing applications. Low-temperature Au/In thermo-compression and Au–Au laser bonding processes are parts of the integration platform enabling integration of millimeter-wave monolithic integrated circuits.

Original languageEnglish
Pages (from-to)651-659
Number of pages9
JournalInternational Journal of Microwave and Wireless Technologies
Volume10
Issue number56
DOIs
Publication statusPublished - 2018
MoE publication typeA1 Journal article-refereed

Fingerprint

Micromachining
Monolithic integrated circuits
Waveguides
Waveguide filters
Silicon wafers
Millimeter waves
MEMS
Silicon
Lasers
Communication
Substrates
Costs
Temperature

Keywords

  • Hybrid and multi-chip modules
  • micromachining
  • Si-based devices and IC technologies

Cite this

@article{ca83b39fbf864a5ab8e9053ef84746af,
title = "Micromachining integration platform for sub-terahertz and terahertz systems",
abstract = "We demonstrate a sub-terahertz (THz) and THz integration platform based on micromachined waveguides on silicon. The demonstrated components in the frequency range 225–325 GHz include waveguides, filters, waveguide vias, and low-loss transitions between the waveguide and the monolithic integrated circuits. The developed process relies on microelectromechanical systems manufacturing methods and silicon wafer substrates, promising a scalable and cost-efficient system integration method for future sub-THz and THz communication and sensing applications. Low-temperature Au/In thermo-compression and Au–Au laser bonding processes are parts of the integration platform enabling integration of millimeter-wave monolithic integrated circuits.",
keywords = "Hybrid and multi-chip modules, micromachining, Si-based devices and IC technologies",
author = "Vladimir Ermolov and Antti Lamminen and Jaakko Saarilahti and Ben W{\"a}lchli and Mikko Kantanen and Pekka Pursula",
year = "2018",
doi = "10.1017/S175907871800048X",
language = "English",
volume = "10",
pages = "651--659",
journal = "International Journal of Microwave and Wireless Technologies",
issn = "1759-0787",
publisher = "Cambridge University Press",
number = "56",

}

TY - JOUR

T1 - Micromachining integration platform for sub-terahertz and terahertz systems

AU - Ermolov, Vladimir

AU - Lamminen, Antti

AU - Saarilahti, Jaakko

AU - Wälchli, Ben

AU - Kantanen, Mikko

AU - Pursula, Pekka

PY - 2018

Y1 - 2018

N2 - We demonstrate a sub-terahertz (THz) and THz integration platform based on micromachined waveguides on silicon. The demonstrated components in the frequency range 225–325 GHz include waveguides, filters, waveguide vias, and low-loss transitions between the waveguide and the monolithic integrated circuits. The developed process relies on microelectromechanical systems manufacturing methods and silicon wafer substrates, promising a scalable and cost-efficient system integration method for future sub-THz and THz communication and sensing applications. Low-temperature Au/In thermo-compression and Au–Au laser bonding processes are parts of the integration platform enabling integration of millimeter-wave monolithic integrated circuits.

AB - We demonstrate a sub-terahertz (THz) and THz integration platform based on micromachined waveguides on silicon. The demonstrated components in the frequency range 225–325 GHz include waveguides, filters, waveguide vias, and low-loss transitions between the waveguide and the monolithic integrated circuits. The developed process relies on microelectromechanical systems manufacturing methods and silicon wafer substrates, promising a scalable and cost-efficient system integration method for future sub-THz and THz communication and sensing applications. Low-temperature Au/In thermo-compression and Au–Au laser bonding processes are parts of the integration platform enabling integration of millimeter-wave monolithic integrated circuits.

KW - Hybrid and multi-chip modules

KW - micromachining

KW - Si-based devices and IC technologies

UR - http://www.scopus.com/inward/record.url?scp=85045096218&partnerID=8YFLogxK

U2 - 10.1017/S175907871800048X

DO - 10.1017/S175907871800048X

M3 - Article

AN - SCOPUS:85045096218

VL - 10

SP - 651

EP - 659

JO - International Journal of Microwave and Wireless Technologies

JF - International Journal of Microwave and Wireless Technologies

SN - 1759-0787

IS - 56

ER -