Micromachining integration platform for sub-terahertz and terahertz systems

Vladimir Ermolov; Antti Lamminen; Jaakko Saarilahti; Ben Wälchli; Mikko Kantanen; Pekka Pursula

doi:10.1017/S175907871800048X

Micromachining integration platform for sub-terahertz and terahertz systems

Vladimir Ermolov^*
, Antti Lamminen
, Jaakko Saarilahti
, Ben Wälchli
, Mikko Kantanen
, Pekka Pursula

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Abstract

We demonstrate a sub-terahertz (THz) and THz integration platform based on micromachined waveguides on silicon. The demonstrated components in the frequency range 225–325 GHz include waveguides, filters, waveguide vias, and low-loss transitions between the waveguide and the monolithic integrated circuits. The developed process relies on microelectromechanical systems manufacturing methods and silicon wafer substrates, promising a scalable and cost-efficient system integration method for future sub-THz and THz communication and sensing applications. Low-temperature Au/In thermo-compression and Au–Au laser bonding processes are parts of the integration platform enabling integration of millimeter-wave monolithic integrated circuits.

Original language	English
Pages (from-to)	651-659
Journal	International Journal of Microwave and Wireless Technologies
Volume	10
Issue number	56
DOIs	https://doi.org/10.1017/S175907871800048X
Publication status	Published - 1 Jun 2018
MoE publication type	A1 Journal article-refereed

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

Hybrid and multi-chip modules
micromachining
Si-based devices and IC technologies
OtaNano

Access to Document

10.1017/S175907871800048X

Cite this

@article{ca83b39fbf864a5ab8e9053ef84746af,

title = "Micromachining integration platform for sub-terahertz and terahertz systems",

abstract = "We demonstrate a sub-terahertz (THz) and THz integration platform based on micromachined waveguides on silicon. The demonstrated components in the frequency range 225–325 GHz include waveguides, filters, waveguide vias, and low-loss transitions between the waveguide and the monolithic integrated circuits. The developed process relies on microelectromechanical systems manufacturing methods and silicon wafer substrates, promising a scalable and cost-efficient system integration method for future sub-THz and THz communication and sensing applications. Low-temperature Au/In thermo-compression and Au–Au laser bonding processes are parts of the integration platform enabling integration of millimeter-wave monolithic integrated circuits.",

keywords = "Hybrid and multi-chip modules, micromachining, Si-based devices and IC technologies, OtaNano",

author = "Vladimir Ermolov and Antti Lamminen and Jaakko Saarilahti and Ben W{\"a}lchli and Mikko Kantanen and Pekka Pursula",

year = "2018",

month = jun,

day = "1",

doi = "10.1017/S175907871800048X",

language = "English",

volume = "10",

pages = "651--659",

journal = "International Journal of Microwave and Wireless Technologies",

issn = "1759-0787",

publisher = "Cambridge University Press",

number = "56",

}

TY - JOUR

T1 - Micromachining integration platform for sub-terahertz and terahertz systems

AU - Ermolov, Vladimir

AU - Lamminen, Antti

AU - Saarilahti, Jaakko

AU - Wälchli, Ben

AU - Kantanen, Mikko

AU - Pursula, Pekka

PY - 2018/6/1

Y1 - 2018/6/1

N2 - We demonstrate a sub-terahertz (THz) and THz integration platform based on micromachined waveguides on silicon. The demonstrated components in the frequency range 225–325 GHz include waveguides, filters, waveguide vias, and low-loss transitions between the waveguide and the monolithic integrated circuits. The developed process relies on microelectromechanical systems manufacturing methods and silicon wafer substrates, promising a scalable and cost-efficient system integration method for future sub-THz and THz communication and sensing applications. Low-temperature Au/In thermo-compression and Au–Au laser bonding processes are parts of the integration platform enabling integration of millimeter-wave monolithic integrated circuits.

AB - We demonstrate a sub-terahertz (THz) and THz integration platform based on micromachined waveguides on silicon. The demonstrated components in the frequency range 225–325 GHz include waveguides, filters, waveguide vias, and low-loss transitions between the waveguide and the monolithic integrated circuits. The developed process relies on microelectromechanical systems manufacturing methods and silicon wafer substrates, promising a scalable and cost-efficient system integration method for future sub-THz and THz communication and sensing applications. Low-temperature Au/In thermo-compression and Au–Au laser bonding processes are parts of the integration platform enabling integration of millimeter-wave monolithic integrated circuits.

KW - Hybrid and multi-chip modules

KW - micromachining

KW - Si-based devices and IC technologies

KW - OtaNano

UR - https://www.scopus.com/pages/publications/85061197475

U2 - 10.1017/S175907871800048X

DO - 10.1017/S175907871800048X

M3 - Article

SN - 1759-0787

VL - 10

SP - 651

EP - 659

JO - International Journal of Microwave and Wireless Technologies

JF - International Journal of Microwave and Wireless Technologies

IS - 56

ER -

Micromachining integration platform for sub-terahertz and terahertz systems

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Micromachining integration platform for sub-terahertz and terahertz systems

Abstract

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OtaNano

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