Micromechanical device

Mika Prunnila; Antti Jaakkola; Tuomas Pensala

Micromechanical device

Mika Prunnila (Inventor), Antti Jaakkola (Inventor), Tuomas Pensala (Inventor)

Research output: Patent › Patent

Abstract

The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100 degrees centigrade The device can be a resonator. Also a method of designing the device is disclosed.

Patent family as of 29.9.2021
CN103650343 A 20140319 CN201280023350 20120511
CN103650343 B 20160622 CN201280023350 20120511
DE602012017114 D1 20160519 DE201260017114T 20120511
EP2707953 A1 20140319 EP20120786090 20120511
EP2707953 A4 20141203 EP20120786090 20120511
EP2707953 B1 20160413 EP20120786090 20120511
ES2582328 T3 20160912 ES20120786090T 20120511
FI123933 B 20131231 FI20110005465 20110513
FI20115465 A 20121114 FI20110005465 20110513
FI20115465 A0 20110513 FI20110005465 20110513
JP2014519260 T2 20140807 JP20140510842T 20120511
JP5877242 B2 20160302 JP20140510842T 20120511
KR101668835 B1 20161028 KR20137033278 20120511
KR20140026560 A 20140305 KR20137033278 20120511
US2012286903 AA 20121115 US20120468052 20120510
US8558643 BB 20131015 US20120468052 20120510
WO12156585 A1 20121122 WO2012FI50456 20120511

Link to current patent family on right

Original language	English
Patent number	EP2707953
IPC	H03H 9/ 24 A I
Priority date	11/05/12
Publication status	Published - 19 Mar 2014
MoE publication type	H1 Granted patent

Cite this

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title = "Micromechanical device",

abstract = "The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100 degrees centigrade The device can be a resonator. Also a method of designing the device is disclosed.Patent family as of 29.9.2021CN103650343 A 20140319 CN201280023350 20120511 CN103650343 B 20160622 CN201280023350 20120511 DE602012017114 D1 20160519 DE201260017114T 20120511 EP2707953 A1 20140319 EP20120786090 20120511 EP2707953 A4 20141203 EP20120786090 20120511 EP2707953 B1 20160413 EP20120786090 20120511 ES2582328 T3 20160912 ES20120786090T 20120511 FI123933 B 20131231 FI20110005465 20110513 FI20115465 A 20121114 FI20110005465 20110513 FI20115465 A0 20110513 FI20110005465 20110513 JP2014519260 T2 20140807 JP20140510842T 20120511 JP5877242 B2 20160302 JP20140510842T 20120511 KR101668835 B1 20161028 KR20137033278 20120511 KR20140026560 A 20140305 KR20137033278 20120511 US2012286903 AA 20121115 US20120468052 20120510 US8558643 BB 20131015 US20120468052 20120510 WO12156585 A1 20121122 WO2012FI50456 20120511Link to current patent family on right ",

author = "Mika Prunnila and Antti Jaakkola and Tuomas Pensala",

year = "2014",

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day = "19",

language = "English",

type = "Patent",

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AU - Prunnila, Mika

AU - Jaakkola, Antti

AU - Pensala, Tuomas

PY - 2014/3/19

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N2 - The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100 degrees centigrade The device can be a resonator. Also a method of designing the device is disclosed.Patent family as of 29.9.2021CN103650343 A 20140319 CN201280023350 20120511 CN103650343 B 20160622 CN201280023350 20120511 DE602012017114 D1 20160519 DE201260017114T 20120511 EP2707953 A1 20140319 EP20120786090 20120511 EP2707953 A4 20141203 EP20120786090 20120511 EP2707953 B1 20160413 EP20120786090 20120511 ES2582328 T3 20160912 ES20120786090T 20120511 FI123933 B 20131231 FI20110005465 20110513 FI20115465 A 20121114 FI20110005465 20110513 FI20115465 A0 20110513 FI20110005465 20110513 JP2014519260 T2 20140807 JP20140510842T 20120511 JP5877242 B2 20160302 JP20140510842T 20120511 KR101668835 B1 20161028 KR20137033278 20120511 KR20140026560 A 20140305 KR20137033278 20120511 US2012286903 AA 20121115 US20120468052 20120510 US8558643 BB 20131015 US20120468052 20120510 WO12156585 A1 20121122 WO2012FI50456 20120511Link to current patent family on right

AB - The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100 degrees centigrade The device can be a resonator. Also a method of designing the device is disclosed.Patent family as of 29.9.2021CN103650343 A 20140319 CN201280023350 20120511 CN103650343 B 20160622 CN201280023350 20120511 DE602012017114 D1 20160519 DE201260017114T 20120511 EP2707953 A1 20140319 EP20120786090 20120511 EP2707953 A4 20141203 EP20120786090 20120511 EP2707953 B1 20160413 EP20120786090 20120511 ES2582328 T3 20160912 ES20120786090T 20120511 FI123933 B 20131231 FI20110005465 20110513 FI20115465 A 20121114 FI20110005465 20110513 FI20115465 A0 20110513 FI20110005465 20110513 JP2014519260 T2 20140807 JP20140510842T 20120511 JP5877242 B2 20160302 JP20140510842T 20120511 KR101668835 B1 20161028 KR20137033278 20120511 KR20140026560 A 20140305 KR20137033278 20120511 US2012286903 AA 20121115 US20120468052 20120510 US8558643 BB 20131015 US20120468052 20120510 WO12156585 A1 20121122 WO2012FI50456 20120511Link to current patent family on right

UR - https://worldwide.espacenet.com/patent/search/family/044071592/publication/EP2707953A1?q=EP2707953

M3 - Patent

M1 - EP2707953

ER -

Micromechanical device

Abstract

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