Abstract
The invention relates to a temperature compensated micromechanical resonator and method of manufacturing thereof. The resonator comprises a resonator element comprising a semiconductor crystal structure, which is doped so as to reduce its temperature coefficient of frequency, transducer means for exciting to the resonator element a vibrational mode. According to the invention the crystal orientation and shape of the resonator element are chosen to allow for a shear mode having a saddle point to be excited to the resonator element, and said transducer means are adapted to excite said shear mode to the resonator element. Accurate micromechanical resonators with now temperature drift can be achieved by means of the invention.
Patent family as of 27.9.2021
DE602011008653 D1 20140904 DE201160008653T 20110811
EP2603976 A1 20130619 EP20110816145 20110811
EP2603976 A4 20130619 EP20110816145 20110811
EP2603976 B1 20140723 EP20110816145 20110811
FI20105851 A 20120214 FI20100005851 20100813
FI20105851 A0 20100813 FI20100005851 20100813
US2013187724 AA 20130725 US20110816493 20110811
US9071226 BB 20150630 US20110816493 20110811
WO12020172 A1 20120216 WO2011FI50710 20110811
Patent family as of 27.9.2021
DE602011008653 D1 20140904 DE201160008653T 20110811
EP2603976 A1 20130619 EP20110816145 20110811
EP2603976 A4 20130619 EP20110816145 20110811
EP2603976 B1 20140723 EP20110816145 20110811
FI20105851 A 20120214 FI20100005851 20100813
FI20105851 A0 20100813 FI20100005851 20100813
US2013187724 AA 20130725 US20110816493 20110811
US9071226 BB 20150630 US20110816493 20110811
WO12020172 A1 20120216 WO2011FI50710 20110811
Link to current patent family on right
Original language | English |
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Patent number | EP2603976 |
IPC | B81B 3/ 00 A N |
Priority date | 11/08/11 |
Publication status | Published - 19 Jun 2013 |
MoE publication type | H1 Granted patent |