Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

Feng Gao, Sanna Arpiainen, Riikka L. Puurunen (Corresponding Author)

    Research output: Contribution to journalArticleScientificpeer-review

    25 Citations (Scopus)

    Abstract

    Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20-5000 µm) and cavity height (e.g., 200-1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al2O3 and TiO2 processes from Me3Al/H2O and TiCl4/H2O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes.
    Original languageEnglish
    Article number010601
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume33
    Issue number1
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Silicon
    atomic layer epitaxy
    high aspect ratio
    Atomic layer deposition
    Aspect ratio
    Thin films
    silicon
    thin films
    cavities
    vapor deposition
    Chemical vapor deposition
    roofs
    aspect ratio
    Roofs
    tuning
    Tuning

    Keywords

    • aspect ratio
    • atomic layer deposition
    • silicon
    • thin films

    Cite this

    @article{fd7e141c3efe43d6b4ae7b98d6d5e59c,
    title = "Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis",
    abstract = "Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20-5000 µm) and cavity height (e.g., 200-1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al2O3 and TiO2 processes from Me3Al/H2O and TiCl4/H2O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes.",
    keywords = "aspect ratio, atomic layer deposition, silicon, thin films",
    author = "Feng Gao and Sanna Arpiainen and Puurunen, {Riikka L.}",
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    year = "2015",
    doi = "10.1116/1.4903941",
    language = "English",
    volume = "33",
    journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",
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    publisher = "American Vacuum Society AVS",
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    }

    Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis. / Gao, Feng; Arpiainen, Sanna; Puurunen, Riikka L. (Corresponding Author).

    In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 33, No. 1, 010601, 2015.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

    AU - Gao, Feng

    AU - Arpiainen, Sanna

    AU - Puurunen, Riikka L.

    N1 - Project code: 73742

    PY - 2015

    Y1 - 2015

    N2 - Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20-5000 µm) and cavity height (e.g., 200-1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al2O3 and TiO2 processes from Me3Al/H2O and TiCl4/H2O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes.

    AB - Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20-5000 µm) and cavity height (e.g., 200-1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al2O3 and TiO2 processes from Me3Al/H2O and TiCl4/H2O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes.

    KW - aspect ratio

    KW - atomic layer deposition

    KW - silicon

    KW - thin films

    U2 - 10.1116/1.4903941

    DO - 10.1116/1.4903941

    M3 - Article

    VL - 33

    JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

    JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

    SN - 0734-2101

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    M1 - 010601

    ER -