Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20-5000 µm) and cavity height (e.g., 200-1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al2O3 and TiO2 processes from Me3Al/H2O and TiCl4/H2O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes.
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2015|
|MoE publication type||A1 Journal article-refereed|
- aspect ratio
- atomic layer deposition
- thin films