Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

Feng Gao, Sanna Arpiainen, Riikka L. Puurunen (Corresponding Author)

Research output: Contribution to journalArticleScientificpeer-review

24 Citations (Scopus)

Abstract

Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20-5000 µm) and cavity height (e.g., 200-1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al2O3 and TiO2 processes from Me3Al/H2O and TiCl4/H2O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes.
Original languageEnglish
Article number010601
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume33
Issue number1
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

Fingerprint

Silicon
atomic layer epitaxy
high aspect ratio
Atomic layer deposition
Aspect ratio
Thin films
silicon
thin films
cavities
vapor deposition
Chemical vapor deposition
roofs
aspect ratio
Roofs
tuning
Tuning

Keywords

  • aspect ratio
  • atomic layer deposition
  • silicon
  • thin films

Cite this

@article{fd7e141c3efe43d6b4ae7b98d6d5e59c,
title = "Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis",
abstract = "Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20-5000 µm) and cavity height (e.g., 200-1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al2O3 and TiO2 processes from Me3Al/H2O and TiCl4/H2O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes.",
keywords = "aspect ratio, atomic layer deposition, silicon, thin films",
author = "Feng Gao and Sanna Arpiainen and Puurunen, {Riikka L.}",
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year = "2015",
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language = "English",
volume = "33",
journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",
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}

Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis. / Gao, Feng; Arpiainen, Sanna; Puurunen, Riikka L. (Corresponding Author).

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 33, No. 1, 010601, 2015.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

AU - Gao, Feng

AU - Arpiainen, Sanna

AU - Puurunen, Riikka L.

N1 - Project code: 73742

PY - 2015

Y1 - 2015

N2 - Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20-5000 µm) and cavity height (e.g., 200-1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al2O3 and TiO2 processes from Me3Al/H2O and TiCl4/H2O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes.

AB - Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20-5000 µm) and cavity height (e.g., 200-1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al2O3 and TiO2 processes from Me3Al/H2O and TiCl4/H2O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes.

KW - aspect ratio

KW - atomic layer deposition

KW - silicon

KW - thin films

U2 - 10.1116/1.4903941

DO - 10.1116/1.4903941

M3 - Article

VL - 33

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

SN - 0734-2101

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M1 - 010601

ER -