Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

Feng Gao, Sanna Arpiainen, Riikka L. Puurunen (Corresponding Author)

    Research output: Contribution to journalArticleScientificpeer-review

    40 Citations (Scopus)


    Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20-5000 µm) and cavity height (e.g., 200-1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al2O3 and TiO2 processes from Me3Al/H2O and TiCl4/H2O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes.
    Original languageEnglish
    Article number010601
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Issue number1
    Publication statusPublished - 2015
    MoE publication typeA1 Journal article-refereed


    • aspect ratio
    • atomic layer deposition
    • silicon
    • thin films


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