Microwave-cut silicon layer transfer

D.C. Thompson, T.L. Alford (Corresponding Author), J.W. Mayer, T. Hochbauer, M. Nastasi, S.S. Lau, N.D. Theodore, Kimmo Henttinen, Ilkka Suni, P.K. Chu

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature.
Original languageEnglish
Article number224103
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number22
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

Fingerprint

microwaves
silicon
temperature measurement
crystallinity
backscattering
electrical properties
insulators
atomic force microscopy
transmission electron microscopy
cavities
heating
temperature
spectroscopy
ions

Keywords

  • microwave heating
  • silicon
  • elemental semiconductors
  • Rutherford backscattering
  • transmission electron microscopy
  • atomic force microscopy
  • annealing
  • ion beam effects
  • semiconductor technology
  • Hall effect

Cite this

Thompson, D. C., Alford, T. L., Mayer, J. W., Hochbauer, T., Nastasi, M., Lau, S. S., ... Chu, P. K. (2005). Microwave-cut silicon layer transfer. Applied Physics Letters, 87(22), [224103]. https://doi.org/10.1063/1.2135395
Thompson, D.C. ; Alford, T.L. ; Mayer, J.W. ; Hochbauer, T. ; Nastasi, M. ; Lau, S.S. ; Theodore, N.D. ; Henttinen, Kimmo ; Suni, Ilkka ; Chu, P.K. / Microwave-cut silicon layer transfer. In: Applied Physics Letters. 2005 ; Vol. 87, No. 22.
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abstract = "Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature.",
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Thompson, DC, Alford, TL, Mayer, JW, Hochbauer, T, Nastasi, M, Lau, SS, Theodore, ND, Henttinen, K, Suni, I & Chu, PK 2005, 'Microwave-cut silicon layer transfer', Applied Physics Letters, vol. 87, no. 22, 224103. https://doi.org/10.1063/1.2135395

Microwave-cut silicon layer transfer. / Thompson, D.C.; Alford, T.L. (Corresponding Author); Mayer, J.W.; Hochbauer, T.; Nastasi, M.; Lau, S.S.; Theodore, N.D.; Henttinen, Kimmo; Suni, Ilkka; Chu, P.K.

In: Applied Physics Letters, Vol. 87, No. 22, 224103, 2005.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Microwave-cut silicon layer transfer

AU - Thompson, D.C.

AU - Alford, T.L.

AU - Mayer, J.W.

AU - Hochbauer, T.

AU - Nastasi, M.

AU - Lau, S.S.

AU - Theodore, N.D.

AU - Henttinen, Kimmo

AU - Suni, Ilkka

AU - Chu, P.K.

PY - 2005

Y1 - 2005

N2 - Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature.

AB - Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature.

KW - microwave heating

KW - silicon

KW - elemental semiconductors

KW - Rutherford backscattering

KW - transmission electron microscopy

KW - atomic force microscopy

KW - annealing

KW - ion beam effects

KW - semiconductor technology

KW - Hall effect

U2 - 10.1063/1.2135395

DO - 10.1063/1.2135395

M3 - Article

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 224103

ER -

Thompson DC, Alford TL, Mayer JW, Hochbauer T, Nastasi M, Lau SS et al. Microwave-cut silicon layer transfer. Applied Physics Letters. 2005;87(22). 224103. https://doi.org/10.1063/1.2135395