Abstract
Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave
system for time durations as low as 12 s. This is a significant
decrease in exfoliation incubation times. Sample temperatures measured
by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy
were used to determine layer thickness and crystallinity. Surface
quality was measured by using atomic force microscopy. Hall measurements
were used to characterize electrical properties as a function of
postcut anneal time and temperature.
Original language | English |
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Article number | 224103 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 87 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2005 |
MoE publication type | A1 Journal article-refereed |
Keywords
- microwave heating
- silicon
- elemental semiconductors
- Rutherford backscattering
- transmission electron microscopy
- atomic force microscopy
- annealing
- ion beam effects
- semiconductor technology
- Hall effect