Microwave-cut silicon layer transfer

D.C. Thompson, T.L. Alford (Corresponding Author), J.W. Mayer, T. Hochbauer, M. Nastasi, S.S. Lau, N.D. Theodore, Kimmo Henttinen, Ilkka Suni, P.K. Chu

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Abstract

Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature.
Original languageEnglish
Article number224103
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number22
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

Keywords

  • microwave heating
  • silicon
  • elemental semiconductors
  • Rutherford backscattering
  • transmission electron microscopy
  • atomic force microscopy
  • annealing
  • ion beam effects
  • semiconductor technology
  • Hall effect

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    Thompson, D. C., Alford, T. L., Mayer, J. W., Hochbauer, T., Nastasi, M., Lau, S. S., Theodore, N. D., Henttinen, K., Suni, I., & Chu, P. K. (2005). Microwave-cut silicon layer transfer. Applied Physics Letters, 87(22), [224103]. https://doi.org/10.1063/1.2135395