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Microwave-cut silicon layer transfer
D.C. Thompson
, T.L. Alford
*
, J.W. Mayer
, T. Hochbauer
, M. Nastasi
, S.S. Lau
, N.D. Theodore
, Kimmo Henttinen
, Ilkka Suni
, P.K. Chu
*
Corresponding author for this work
VTT Technical Research Centre of Finland
City University of Hong Kong
Arizona State University
Los Alamos National Laboratory
University of California, San Diego
Freescale Semiconductor Inc.
VTT (former employee or external)
Research output
:
Contribution to journal
›
Article
›
Scientific
›
peer-review
12
Citations (Scopus)
Overview
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Keyphrases
Silicon Layer
100%
Layer Transfer
100%
Atomic Force Microscopy
33%
Annealing
33%
Electrical Properties
33%
Layer Thickness
33%
Rutherford Backscattering Spectrometry
33%
Insulator
33%
Crystallinity
33%
Pyrometry
33%
Microwave Heating
33%
Surface Quality
33%
Sample Temperature
33%
Cross-sectional Transmission Electron Microscopy
33%
Incubation Time
33%
Time Duration
33%
Hall Measurement
33%
Ion-cutting
33%
Layered Substrate
33%
Microwave Systems
33%
INIS
layers
100%
silicon
100%
microwave radiation
100%
surfaces
25%
thickness
25%
substrates
25%
atomic force microscopy
25%
range
25%
electrical properties
25%
transmission electron microscopy
25%
cavities
25%
ions
25%
incubation
25%
ghz range
25%
rutherford backscattering spectrometry
25%
microwave heating
25%
Physics
Backscattering
100%
Crystallinity
100%
Transmission Electron Microscopy
100%
Atomic Force Microscopy
100%
Electrical Property
100%
Engineering
Silicon Layer
100%
Layer Thickness
33%
Sample Temperature
33%
Surface Quality
33%
Atomic Force Microscopy
33%
Duration Time
33%
Crystallinity
33%
Microwave Heating
33%
Material Science
Silicon
100%
Surface Property
33%
Rutherford Backscattering Spectrometry
33%
Transmission Electron Microscopy
33%
Atomic Force Microscopy
33%