Abstract
By using arrays of nanowires with intentionally broken symmetry, we were
able to detect microwaves up to 110 GHz at room temperature. This is,
to the best of our knowledge, the highest speed that has been
demonstrated in different types of novel electronic nanostructures to
date. Our experiments showed a rather stable detection sensitivity over a
broad frequency range from 100 MHz to 110 GHz. The novel working
principle enabled the nanowires to detect microwaves efficiently without
a dc bias. In principle, the need for only one high-resolution
lithography step and the planar architecture allow an arbitrary number
of nanowires to be made by folding a linear array as many times as
required over a large area, for example, a whole wafer. Our experiment
on 18 parallel nanowires showed a sensitivity of approximately 75 mV dc
output/mW of nominal input power of the 110 GHz signal, even though only
about 0.4% of the rf power was effectively applied to the structure
because of an impedance mismatch. Because this array of nanowires
operates simultaneously, low detection noise was achieved, allowing us
to detect −25 dBm 110 GHz microwaves at zero bias with a standard setup.
Original language | English |
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Pages (from-to) | 1423 - 1427 |
Number of pages | 5 |
Journal | Nano Letters |
Volume | 5 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2005 |
MoE publication type | A1 Journal article-refereed |
Keywords
- microwave devices
- nanowires
- nanostructures
- nanodevices