Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

Henrik Forsten; Jan H. Saijets; Mikko Kantanen; Mikko Varonen; Mehmet Kaynak; Petri Piironen

doi:10.1109/TMTT.2021.3104028

Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

Henrik Forsten (Corresponding Author), Jan H. Saijets, Mikko Kantanen, Mikko Varonen, Mehmet Kaynak, Petri Piironen

BA6204 Antennas and RF technologies

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

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Abstract

This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.

Original language	English
Pages (from-to)	4689-4696
Number of pages	8
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	69
Issue number	11
Early online date	25 Aug 2021
DOIs	https://doi.org/10.1109/TMTT.2021.3104028
Publication status	Published - 1 Nov 2021
MoE publication type	A1 Journal article-refereed

Keywords

Millimeter-wave
noise sources
SiGe

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10.1109/TMTT.2021.3104028

NoiseSourcePaper_2021Accepted author manuscript, 1.7 MB

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title = "Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology",

abstract = "This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.",

keywords = "Millimeter-wave, noise sources, SiGe",

author = "Henrik Forsten and Saijets, {Jan H.} and Mikko Kantanen and Mikko Varonen and Mehmet Kaynak and Petri Piironen",

note = "Funding Information: This work was supported in part by European Space Research and Technology Centre (ESTEC), Noordwijk, The Netherlands, under Contract 4000122870/17/NL/HK, and in part by the Academy of Finland Research Fellow Project under Grant 310234. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

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doi = "10.1109/TMTT.2021.3104028",

language = "English",

volume = "69",

pages = "4689--4696",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

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Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology. / Forsten, Henrik (Corresponding Author); Saijets, Jan H.; Kantanen, Mikko ; Varonen, Mikko; Kaynak, Mehmet; Piironen, Petri.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 69, No. 11, 01.11.2021, p. 4689-4696.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

AU - Forsten, Henrik

AU - Saijets, Jan H.

AU - Kantanen, Mikko

AU - Varonen, Mikko

AU - Kaynak, Mehmet

AU - Piironen, Petri

N1 - Funding Information: This work was supported in part by European Space Research and Technology Centre (ESTEC), Noordwijk, The Netherlands, under Contract 4000122870/17/NL/HK, and in part by the Academy of Finland Research Fellow Project under Grant 310234. Publisher Copyright: © 1963-2012 IEEE.

PY - 2021/11/1

Y1 - 2021/11/1

N2 - This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.

AB - This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.

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KW - noise sources

KW - SiGe

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EP - 4696

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 11

ER -

Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

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