Abstract
This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.
Original language | English |
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Pages (from-to) | 4689-4696 |
Journal | IEEE Transactions on Microwave Theory and Techniques |
Volume | 69 |
Issue number | 11 |
Early online date | 25 Aug 2021 |
DOIs | |
Publication status | Published - 1 Nov 2021 |
MoE publication type | A1 Journal article-refereed |
Funding
This work was supported in part by European Space Research and Technology Centre (ESTEC), Noordwijk, The Netherlands, under Contract 4000122870/17/NL/HK, and in part by the Academy of Finland Research Fellow Project under Grant 310234.
Keywords
- Millimeter-wave
- noise sources
- SiGe