Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

Henrik Forsten (Corresponding Author), Jan H. Saijets, Mikko Kantanen, Mikko Varonen, Mehmet Kaynak, Petri Piironen

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)
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This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.

Original languageEnglish
Pages (from-to)4689-4696
Number of pages8
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number11
Early online date25 Aug 2021
Publication statusPublished - 1 Nov 2021
MoE publication typeA1 Journal article-refereed


  • Millimeter-wave
  • noise sources
  • SiGe


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