Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

Henrik Forsten; Jan H. Saijets; Mikko Kantanen; Mikko Varonen; Mehmet Kaynak; Petri Piironen

doi:10.1109/TMTT.2021.3104028

Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

Henrik Forsten (Corresponding Author), Jan H. Saijets, Mikko Kantanen, Mikko Varonen, Mehmet Kaynak, Petri Piironen

BA6204 Antennas and RF technologies

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Abstract

This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.

Original language	English
Journal	IEEE Transactions on Microwave Theory and Techniques
DOIs	https://doi.org/10.1109/TMTT.2021.3104028
Publication status	E-pub ahead of print - 25 Aug 2021
MoE publication type	A1 Journal article-refereed

Keywords

Millimeter-wave
noise sources
SiGe

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10.1109/TMTT.2021.3104028

NoiseSourcePaper_2021Accepted author manuscript, 1.7 MB

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title = "Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology",

abstract = "This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.",

keywords = "Millimeter-wave, noise sources, SiGe",

author = "Henrik Forsten and Saijets, {Jan H.} and Mikko Kantanen and Mikko Varonen and Mehmet Kaynak and Petri Piironen",

year = "2021",

month = aug,

day = "25",

doi = "10.1109/TMTT.2021.3104028",

language = "English",

journal = "IEEE Transactions on Microwave Theory and Techniques",

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T1 - Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

AU - Forsten, Henrik

AU - Saijets, Jan H.

AU - Kantanen, Mikko

AU - Varonen, Mikko

AU - Kaynak, Mehmet

AU - Piironen, Petri

PY - 2021/8/25

Y1 - 2021/8/25

N2 - This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.

AB - This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.

KW - Millimeter-wave

KW - noise sources

KW - SiGe

UR - http://www.scopus.com/inward/record.url?scp=85113862136&partnerID=8YFLogxK

U2 - 10.1109/TMTT.2021.3104028

DO - 10.1109/TMTT.2021.3104028

M3 - Article

AN - SCOPUS:85113862136

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

ER -

Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

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