Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

Henrik Forsten*, Jan H. Saijets, Mikko Kantanen, Mikko Varonen, Mehmet Kaynak, Petri Piironen

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    12 Citations (Scopus)
    312 Downloads (Pure)

    Abstract

    This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.
    Original languageEnglish
    Pages (from-to)4689-4696
    JournalIEEE Transactions on Microwave Theory and Techniques
    Volume69
    Issue number11
    Early online date25 Aug 2021
    DOIs
    Publication statusPublished - 1 Nov 2021
    MoE publication typeA1 Journal article-refereed

    Funding

    This work was supported in part by European Space Research and Technology Centre (ESTEC), Noordwijk, The Netherlands, under Contract 4000122870/17/NL/HK, and in part by the Academy of Finland Research Fellow Project under Grant 310234.

    Keywords

    • Millimeter-wave
    • noise sources
    • SiGe

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