Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

Henrik Forsten (Corresponding Author), Jan H. Saijets, Mikko Kantanen, Mikko Varonen, Mehmet Kaynak, Petri Piironen

Research output: Contribution to journalArticleScientificpeer-review

1 Downloads (Pure)

Abstract

This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.

Original languageEnglish
JournalIEEE Transactions on Microwave Theory and Techniques
DOIs
Publication statusE-pub ahead of print - 25 Aug 2021
MoE publication typeA1 Journal article-refereed

Keywords

  • Millimeter-wave
  • noise sources
  • SiGe

Fingerprint

Dive into the research topics of 'Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology'. Together they form a unique fingerprint.

Cite this