Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

Henrik Forsten; Jan H. Saijets; Mikko Kantanen; Mikko Varonen; Mehmet Kaynak; Petri Piironen

doi:10.1109/TMTT.2021.3104028

Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

Henrik Forsten^*
, Jan H. Saijets
, Mikko Kantanen
, Mikko Varonen
, Mehmet Kaynak
, Petri Piironen

^*Corresponding author for this work

Leibniz Institut für innovative Mikroelektronik (IHP)
European Space Research and Technology Centre (ESTEC)

Research output: Contribution to journal › Article › Scientific › peer-review

17 Citations (Scopus)

511 Downloads (Pure)

Abstract

This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.

Original language	English
Pages (from-to)	4689-4696
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	69
Issue number	11
Early online date	25 Aug 2021
DOIs	https://doi.org/10.1109/TMTT.2021.3104028
Publication status	Published - 1 Nov 2021
MoE publication type	A1 Journal article-refereed

Funding

This work was supported in part by European Space Research and Technology Centre (ESTEC), Noordwijk, The Netherlands, under Contract 4000122870/17/NL/HK, and in part by the Academy of Finland Research Fellow Project under Grant 310234.

Keywords

Millimeter-wave
noise sources
SiGe

Access to Document

10.1109/TMTT.2021.3104028

NoiseSourcePaper_2021Accepted author manuscript, 1.7 MB

Cite this

@article{bc82ea2c71054ea18128eff966074894,

title = "Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology",

abstract = "This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.",

keywords = "Millimeter-wave, noise sources, SiGe",

author = "Henrik Forsten and Saijets, \{Jan H.\} and Mikko Kantanen and Mikko Varonen and Mehmet Kaynak and Petri Piironen",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2021",

month = nov,

day = "1",

doi = "10.1109/TMTT.2021.3104028",

language = "English",

volume = "69",

pages = "4689--4696",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

number = "11",

}

TY - JOUR

T1 - Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

AU - Forsten, Henrik

AU - Saijets, Jan H.

AU - Kantanen, Mikko

AU - Varonen, Mikko

AU - Kaynak, Mehmet

AU - Piironen, Petri

PY - 2021/11/1

Y1 - 2021/11/1

N2 - This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.

AB - This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.

KW - Millimeter-wave

KW - noise sources

KW - SiGe

UR - https://www.scopus.com/pages/publications/85113862136

U2 - 10.1109/TMTT.2021.3104028

DO - 10.1109/TMTT.2021.3104028

M3 - Article

AN - SCOPUS:85113862136

SN - 0018-9480

VL - 69

SP - 4689

EP - 4696

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 11

ER -

Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this