Millimeter-wave integrated circuits in 65-nm CMOS

M. Varonen, M. Kärkkäinen, Mikko Kantanen, K.A.I. Halonen

    Research output: Contribution to journalArticleScientificpeer-review

    97 Citations (Scopus)

    Abstract

    We present the design and measurement results of millimeter-wave integrated circuits implemented in 65-nm baseline CMOS. Both active and passive test structures were measured. In addition, we present the design of an on-chip spiral balun and the transition from CPW to the balun and report transistor noise parameter measurement results at V-band. Finally, the design and measurement results of two amplifiers and a balanced resistive mixer are presented. The 40-GHz amplifier exhibits 14.3 dB of gain and the 1-dB output compression point is at +6-dBm power level using a 1.2 V supply with a compact chip area of 0.286 mm2. The 60-GHz amplifier achieves a measured noise figure of 5.6 dB at 60 GHz. The AM/AM and AM/PM results show a saturated output power of +7 dBm using a 1.2 V supply. In downconversion, the balanced resistive mixer achieves 12.5 dB of conversion loss and +5 dBm of 1-dB input compression point. In upconversion, the measured conversion loss was 13.5 dB with -19 dBm of 1-dB output compression point.
    Original languageEnglish
    Pages (from-to)1991-2002
    Number of pages12
    JournalIEEE Journal of Solid-State Circuits
    Volume43
    Issue number9
    DOIs
    Publication statusPublished - 2008
    MoE publication typeA1 Journal article-refereed

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    Millimeter waves
    Integrated circuits
    Noise figure
    Transistors

    Cite this

    Varonen, M. ; Kärkkäinen, M. ; Kantanen, Mikko ; Halonen, K.A.I. / Millimeter-wave integrated circuits in 65-nm CMOS. In: IEEE Journal of Solid-State Circuits. 2008 ; Vol. 43, No. 9. pp. 1991-2002.
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    title = "Millimeter-wave integrated circuits in 65-nm CMOS",
    abstract = "We present the design and measurement results of millimeter-wave integrated circuits implemented in 65-nm baseline CMOS. Both active and passive test structures were measured. In addition, we present the design of an on-chip spiral balun and the transition from CPW to the balun and report transistor noise parameter measurement results at V-band. Finally, the design and measurement results of two amplifiers and a balanced resistive mixer are presented. The 40-GHz amplifier exhibits 14.3 dB of gain and the 1-dB output compression point is at +6-dBm power level using a 1.2 V supply with a compact chip area of 0.286 mm2. The 60-GHz amplifier achieves a measured noise figure of 5.6 dB at 60 GHz. The AM/AM and AM/PM results show a saturated output power of +7 dBm using a 1.2 V supply. In downconversion, the balanced resistive mixer achieves 12.5 dB of conversion loss and +5 dBm of 1-dB input compression point. In upconversion, the measured conversion loss was 13.5 dB with -19 dBm of 1-dB output compression point.",
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    Millimeter-wave integrated circuits in 65-nm CMOS. / Varonen, M.; Kärkkäinen, M.; Kantanen, Mikko; Halonen, K.A.I.

    In: IEEE Journal of Solid-State Circuits, Vol. 43, No. 9, 2008, p. 1991-2002.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Millimeter-wave integrated circuits in 65-nm CMOS

    AU - Varonen, M.

    AU - Kärkkäinen, M.

    AU - Kantanen, Mikko

    AU - Halonen, K.A.I.

    PY - 2008

    Y1 - 2008

    N2 - We present the design and measurement results of millimeter-wave integrated circuits implemented in 65-nm baseline CMOS. Both active and passive test structures were measured. In addition, we present the design of an on-chip spiral balun and the transition from CPW to the balun and report transistor noise parameter measurement results at V-band. Finally, the design and measurement results of two amplifiers and a balanced resistive mixer are presented. The 40-GHz amplifier exhibits 14.3 dB of gain and the 1-dB output compression point is at +6-dBm power level using a 1.2 V supply with a compact chip area of 0.286 mm2. The 60-GHz amplifier achieves a measured noise figure of 5.6 dB at 60 GHz. The AM/AM and AM/PM results show a saturated output power of +7 dBm using a 1.2 V supply. In downconversion, the balanced resistive mixer achieves 12.5 dB of conversion loss and +5 dBm of 1-dB input compression point. In upconversion, the measured conversion loss was 13.5 dB with -19 dBm of 1-dB output compression point.

    AB - We present the design and measurement results of millimeter-wave integrated circuits implemented in 65-nm baseline CMOS. Both active and passive test structures were measured. In addition, we present the design of an on-chip spiral balun and the transition from CPW to the balun and report transistor noise parameter measurement results at V-band. Finally, the design and measurement results of two amplifiers and a balanced resistive mixer are presented. The 40-GHz amplifier exhibits 14.3 dB of gain and the 1-dB output compression point is at +6-dBm power level using a 1.2 V supply with a compact chip area of 0.286 mm2. The 60-GHz amplifier achieves a measured noise figure of 5.6 dB at 60 GHz. The AM/AM and AM/PM results show a saturated output power of +7 dBm using a 1.2 V supply. In downconversion, the balanced resistive mixer achieves 12.5 dB of conversion loss and +5 dBm of 1-dB input compression point. In upconversion, the measured conversion loss was 13.5 dB with -19 dBm of 1-dB output compression point.

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    DO - 10.1109/JSSC.2008.2001902

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    JO - IEEE Journal of Solid-State Circuits

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