Millimetre wave metamorphic HEMT amplifiers

M. Varonen, M. Kärkkäinen, Mikko Kantanen, Timo Karttaavi, P. Kangaslahti, K. Halonen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    We present a medium power amplifier covering frequency range from 18 GHz to 40 GHz and two low noise amplifiers for 94 GHz cloud profiling radar. These integrated amplifiers were manufactured using a 0.15 μm GaAs based metamorphic high electron mobility transistor (MHEMT) technology. We measured in on-wafer tests for the medium power amplifier, a small-signal gain of 22.5 ± 2.5 dB at K-and Ka-bands. The measured 1 dB output compression point is better than t13 dBm at K-band and better than +9.5 dBm at Ka-band using a 2.5 volts supply. The scattering parameters and the noise figures of the low noise amplifiers were measured at W-band and the results are presented. The best measured gain at 94 GHz was 16 dB and the noise figure 5.7 dB using a supply voltage of 25 V and current of 60 mA.
    Original languageEnglish
    Title of host publicationProceedings of Norchip conference 2004
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages8-11
    ISBN (Print)0-7803-8510-1
    DOIs
    Publication statusPublished - 2004
    MoE publication typeA4 Article in a conference publication
    Event22nd NORCHIP Conference - Oslo, Norway
    Duration: 8 Nov 20049 Nov 2004

    Conference

    Conference22nd NORCHIP Conference
    CountryNorway
    CityOslo
    Period8/11/049/11/04

    Keywords

    • HEMT
    • amplifiers
    • millimetre wave

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  • Cite this

    Varonen, M., Kärkkäinen, M., Kantanen, M., Karttaavi, T., Kangaslahti, P., & Halonen, K. (2004). Millimetre wave metamorphic HEMT amplifiers. In Proceedings of Norchip conference 2004 (pp. 8-11). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/NORCHP.2004.1423809