Abstract
We present a medium power amplifier covering frequency range from 18 GHz to 40 GHz and two low noise amplifiers for 94 GHz cloud profiling radar. These integrated amplifiers were manufactured using a 0.15 μm GaAs based metamorphic high electron mobility transistor (MHEMT) technology. We measured in on-wafer tests for the medium power amplifier, a small-signal gain of 22.5 ± 2.5 dB at K-and Ka-bands. The measured 1 dB output compression point is better than t13 dBm at K-band and better than +9.5 dBm at Ka-band using a 2.5 volts supply. The scattering parameters and the noise figures of the low noise amplifiers were measured at W-band and the results are presented. The best measured gain at 94 GHz was 16 dB and the noise figure 5.7 dB using a supply voltage of 25 V and current of 60 mA.
Original language | English |
---|---|
Title of host publication | Proceedings of Norchip conference 2004 |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 8-11 |
ISBN (Print) | 978-0-7803-8510-8 |
DOIs | |
Publication status | Published - 2004 |
MoE publication type | A4 Article in a conference publication |
Event | 22nd NORCHIP Conference - Oslo, Norway Duration: 8 Nov 2004 → 9 Nov 2004 |
Conference
Conference | 22nd NORCHIP Conference |
---|---|
Country/Territory | Norway |
City | Oslo |
Period | 8/11/04 → 9/11/04 |
Keywords
- HEMT
- amplifiers
- millimetre wave