Millimetre wave metamorphic HEMT amplifiers

Mikko Varonen; Mikko Kärkkäinen; Mikko Kantanen; Timo Karttaavi; Pekka Kangaslahti; Kari Halonen

doi:10.1109/NORCHP.2004.1423809

Millimetre wave metamorphic HEMT amplifiers

Mikko Varonen, Mikko Kärkkäinen, Mikko Kantanen, Timo Karttaavi, Pekka Kangaslahti, Kari Halonen

Helsinki University of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

We present a medium power amplifier covering frequency range from 18 GHz to 40 GHz and two low noise amplifiers for 94 GHz cloud profiling radar. These integrated amplifiers were manufactured using a 0.15 μm GaAs based metamorphic high electron mobility transistor (MHEMT) technology. We measured in on-wafer tests for the medium power amplifier, a small-signal gain of 22.5 ± 2.5 dB at K-and Ka-bands. The measured 1 dB output compression point is better than t13 dBm at K-band and better than +9.5 dBm at Ka-band using a 2.5 volts supply. The scattering parameters and the noise figures of the low noise amplifiers were measured at W-band and the results are presented. The best measured gain at 94 GHz was 16 dB and the noise figure 5.7 dB using a supply voltage of 25 V and current of 60 mA.

Original language	English
Title of host publication	Proceedings of Norchip conference 2004
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	8-11
ISBN (Print)	978-0-7803-8510-8
DOIs	https://doi.org/10.1109/NORCHP.2004.1423809
Publication status	Published - 2004
MoE publication type	A4 Article in a conference publication
Event	22nd NORCHIP Conference - Oslo, Norway Duration: 8 Nov 2004 → 9 Nov 2004

Conference

Conference	22nd NORCHIP Conference
Country/Territory	Norway
City	Oslo
Period	8/11/04 → 9/11/04

Keywords

HEMT
amplifiers
millimetre wave

Access to Document

10.1109/NORCHP.2004.1423809

Cite this

@inproceedings{1868b764c2744ef4995e68c8ffd712d4,

title = "Millimetre wave metamorphic HEMT amplifiers",

abstract = "We present a medium power amplifier covering frequency range from 18 GHz to 40 GHz and two low noise amplifiers for 94 GHz cloud profiling radar. These integrated amplifiers were manufactured using a 0.15 μm GaAs based metamorphic high electron mobility transistor (MHEMT) technology. We measured in on-wafer tests for the medium power amplifier, a small-signal gain of 22.5 ± 2.5 dB at K-and Ka-bands. The measured 1 dB output compression point is better than t13 dBm at K-band and better than +9.5 dBm at Ka-band using a 2.5 volts supply. The scattering parameters and the noise figures of the low noise amplifiers were measured at W-band and the results are presented. The best measured gain at 94 GHz was 16 dB and the noise figure 5.7 dB using a supply voltage of 25 V and current of 60 mA. ",

keywords = "HEMT, amplifiers, millimetre wave",

author = "Mikko Varonen and Mikko K{\"a}rkk{\"a}inen and Mikko Kantanen and Timo Karttaavi and Pekka Kangaslahti and Kari Halonen",

year = "2004",

doi = "10.1109/NORCHP.2004.1423809",

language = "English",

isbn = "978-0-7803-8510-8",

pages = "8--11",

booktitle = "Proceedings of Norchip conference 2004",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "22nd NORCHIP Conference ; Conference date: 08-11-2004 Through 09-11-2004",

}

TY - GEN

T1 - Millimetre wave metamorphic HEMT amplifiers

AU - Varonen, Mikko

AU - Kärkkäinen, Mikko

AU - Kantanen, Mikko

AU - Karttaavi, Timo

AU - Kangaslahti, Pekka

AU - Halonen, Kari

PY - 2004

Y1 - 2004

N2 - We present a medium power amplifier covering frequency range from 18 GHz to 40 GHz and two low noise amplifiers for 94 GHz cloud profiling radar. These integrated amplifiers were manufactured using a 0.15 μm GaAs based metamorphic high electron mobility transistor (MHEMT) technology. We measured in on-wafer tests for the medium power amplifier, a small-signal gain of 22.5 ± 2.5 dB at K-and Ka-bands. The measured 1 dB output compression point is better than t13 dBm at K-band and better than +9.5 dBm at Ka-band using a 2.5 volts supply. The scattering parameters and the noise figures of the low noise amplifiers were measured at W-band and the results are presented. The best measured gain at 94 GHz was 16 dB and the noise figure 5.7 dB using a supply voltage of 25 V and current of 60 mA.

AB - We present a medium power amplifier covering frequency range from 18 GHz to 40 GHz and two low noise amplifiers for 94 GHz cloud profiling radar. These integrated amplifiers were manufactured using a 0.15 μm GaAs based metamorphic high electron mobility transistor (MHEMT) technology. We measured in on-wafer tests for the medium power amplifier, a small-signal gain of 22.5 ± 2.5 dB at K-and Ka-bands. The measured 1 dB output compression point is better than t13 dBm at K-band and better than +9.5 dBm at Ka-band using a 2.5 volts supply. The scattering parameters and the noise figures of the low noise amplifiers were measured at W-band and the results are presented. The best measured gain at 94 GHz was 16 dB and the noise figure 5.7 dB using a supply voltage of 25 V and current of 60 mA.

KW - HEMT

KW - amplifiers

KW - millimetre wave

U2 - 10.1109/NORCHP.2004.1423809

DO - 10.1109/NORCHP.2004.1423809

M3 - Conference article in proceedings

SN - 978-0-7803-8510-8

SP - 8

EP - 11

BT - Proceedings of Norchip conference 2004

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 22nd NORCHIP Conference

Y2 - 8 November 2004 through 9 November 2004

ER -

Millimetre wave metamorphic HEMT amplifiers

Abstract

Conference

Keywords

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