Abstract
Several current and planned scientific, commercial, and military applications require millimetre wave (30-300 GHz) components, for example very low noise receivers. In Millimetre Wave Laboratory of Finland - MilliLab, VTT Information Technology have been developed state-of-the-art measurement facilities for on-wafer S-parameter, noise figure, gain, and noise parameter measurements. These measurements can be carried out up to 110 GHz in the temperature range of 213 K to 573 K. Cryogenic S-parameter measurements can be done from 15 K to 300 K and also up to 110 GHz. As an example, a noise figure and gain measurements of the Low Noise Amplifier (LNA) and noise parameter measurements of High Electron Mobility Transistor (HEMT) at room temperature are presented. Also, cryogenic S-parameter measurements of a PIN diode phase shifter are shown.
| Original language | English |
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| Title of host publication | URSI XXVI Convention on Radio Science and Second Finnish Wireless Communications Workshop |
| Subtitle of host publication | Digest of technical papers |
| Place of Publication | Tampere |
| Publisher | Tampere University of Technology |
| Pages | 93-97 |
| ISBN (Print) | 952-15-0686-5 |
| Publication status | Published - 2001 |
| MoE publication type | B3 Non-refereed article in conference proceedings |
| Event | URSI XXVI Convention on Radio Science and 2nd Finnish Wireless Communications Workshop, FWCW 2001 - Tampere, Finland Duration: 23 Oct 2001 → 24 Oct 2001 Conference number: 26 |
Conference
| Conference | URSI XXVI Convention on Radio Science and 2nd Finnish Wireless Communications Workshop, FWCW 2001 |
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| Country/Territory | Finland |
| City | Tampere |
| Period | 23/10/01 → 24/10/01 |