Millimetre wave on-wafer measurements

Tauno Vähä-Heikkilä, Manu Lahdes, Jussi Varis, Mikko Kantanen, Jussi Tuovinen, Timo Karttaavi, Hannu Hakojärvi

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific


    Several current and planned scientific, commercial, and military applications require millimetre wave (30-300 GHz) components, for example very low noise receivers. In Millimetre Wave Laboratory of Finland - MilliLab, VTT Information Technology have been developed state-of-the-art measurement facilities for on-wafer S-parameter, noise figure, gain, and noise parameter measurements. These measurements can be carried out up to 110 GHz in the temperature range of 213 K to 573 K. Cryogenic S-parameter measurements can be done from 15 K to 300 K and also up to 110 GHz. As an example, a noise figure and gain measurements of the Low Noise Amplifier (LNA) and noise parameter measurements of High Electron Mobility Transistor (HEMT) at room temperature are presented. Also, cryogenic S-parameter measurements of a PIN diode phase shifter are shown.
    Original languageEnglish
    Title of host publicationURSI XXVI Convention on Radio Science and Second Finnish Wireless Communications Workshop
    Subtitle of host publicationDigest of technical papers
    Place of PublicationTampere
    PublisherTampere University of Technology
    ISBN (Print)952-15-0686-5
    Publication statusPublished - 2001
    MoE publication typeB3 Non-refereed article in conference proceedings
    EventURSI XXVI Convention on Radio Science and 2nd Finnish Wireless Communications Workshop, FWCW 2001 - Tampere, Finland
    Duration: 23 Oct 200124 Oct 2001
    Conference number: 26


    ConferenceURSI XXVI Convention on Radio Science and 2nd Finnish Wireless Communications Workshop, FWCW 2001


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