Mini array of quantum Hall devices based on epitaxial graphene

S. Novikov, N. Lebedeva, J. Hämäläinen, I. Iisakka, P. Immonen, Antti Manninen, A. Satrapinski

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)

Abstract

Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×RH,2 = 2 h/e2 was smaller than the relative standard uncertainty of the measurement (<1 × 10−7) limited by the used resistance bridge.
Original languageEnglish
Article number174504
JournalJournal of Applied Physics
Volume119
Issue number17
DOIs
Publication statusPublished - 2016
MoE publication typeA1 Journal article-refereed

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quantum Hall effect
graphene
Hall resistance
plateaus
wire
deviation
magnetic fields
temperature

Keywords

  • graphene
  • metrology
  • quantum Hall effect
  • array
  • resistance

Cite this

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title = "Mini array of quantum Hall devices based on epitaxial graphene",
abstract = "Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×RH,2 = 2 h/e2 was smaller than the relative standard uncertainty of the measurement (<1 × 10−7) limited by the used resistance bridge.",
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year = "2016",
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Mini array of quantum Hall devices based on epitaxial graphene. / Novikov, S.; Lebedeva, N.; Hämäläinen, J.; Iisakka, I.; Immonen, P.; Manninen, Antti; Satrapinski, A.

In: Journal of Applied Physics, Vol. 119, No. 17, 174504, 2016.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Mini array of quantum Hall devices based on epitaxial graphene

AU - Novikov, S.

AU - Lebedeva, N.

AU - Hämäläinen, J.

AU - Iisakka, I.

AU - Immonen, P.

AU - Manninen, Antti

AU - Satrapinski, A.

PY - 2016

Y1 - 2016

N2 - Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×RH,2 = 2 h/e2 was smaller than the relative standard uncertainty of the measurement (<1 × 10−7) limited by the used resistance bridge.

AB - Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×RH,2 = 2 h/e2 was smaller than the relative standard uncertainty of the measurement (<1 × 10−7) limited by the used resistance bridge.

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KW - metrology

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KW - resistance

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