An analytical model for the channel region in MOS-gated power transistors has been developed. The model takes into account the effect of substrate doping gradient on the threshold voltage of the transistor and it can be applied to lateral and vertical DMOS and IGBT transistor structures. The model has been tested by comparing the calculated I-V characteristics for an MOS structure having various doping gradients to the results from a 2-D device simulator.
|Publication status||Published - 1992|
|MoE publication type||A1 Journal article-refereed|