Model for DMOST threshold voltage

Kaj Grahn, Mikael Andersson, Pekka Kuivalainen, Simo Eränen

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

An analytical model for the channel region in MOS-gated power transistors has been developed. The model takes into account the effect of substrate doping gradient on the threshold voltage of the transistor and it can be applied to lateral and vertical DMOS and IGBT transistor structures. The model has been tested by comparing the calculated I-V characteristics for an MOS structure having various doping gradients to the results from a 2-D device simulator.
Original languageEnglish
Pages (from-to)1384-1385
Number of pages2
JournalElectronics Letters
Volume28
Issue number15
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

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Threshold voltage
Transistors
Doping (additives)
Insulated gate bipolar transistors (IGBT)
MOSFET devices
Analytical models
Simulators
Substrates
Power transistors

Cite this

Grahn, K., Andersson, M., Kuivalainen, P., & Eränen, S. (1992). Model for DMOST threshold voltage. Electronics Letters, 28(15), 1384-1385. https://doi.org/10.1049/el:19920880
Grahn, Kaj ; Andersson, Mikael ; Kuivalainen, Pekka ; Eränen, Simo. / Model for DMOST threshold voltage. In: Electronics Letters. 1992 ; Vol. 28, No. 15. pp. 1384-1385.
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abstract = "An analytical model for the channel region in MOS-gated power transistors has been developed. The model takes into account the effect of substrate doping gradient on the threshold voltage of the transistor and it can be applied to lateral and vertical DMOS and IGBT transistor structures. The model has been tested by comparing the calculated I-V characteristics for an MOS structure having various doping gradients to the results from a 2-D device simulator.",
author = "Kaj Grahn and Mikael Andersson and Pekka Kuivalainen and Simo Er{\"a}nen",
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Grahn, K, Andersson, M, Kuivalainen, P & Eränen, S 1992, 'Model for DMOST threshold voltage', Electronics Letters, vol. 28, no. 15, pp. 1384-1385. https://doi.org/10.1049/el:19920880

Model for DMOST threshold voltage. / Grahn, Kaj; Andersson, Mikael; Kuivalainen, Pekka; Eränen, Simo.

In: Electronics Letters, Vol. 28, No. 15, 1992, p. 1384-1385.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Model for DMOST threshold voltage

AU - Grahn, Kaj

AU - Andersson, Mikael

AU - Kuivalainen, Pekka

AU - Eränen, Simo

N1 - Project code: PUO1008

PY - 1992

Y1 - 1992

N2 - An analytical model for the channel region in MOS-gated power transistors has been developed. The model takes into account the effect of substrate doping gradient on the threshold voltage of the transistor and it can be applied to lateral and vertical DMOS and IGBT transistor structures. The model has been tested by comparing the calculated I-V characteristics for an MOS structure having various doping gradients to the results from a 2-D device simulator.

AB - An analytical model for the channel region in MOS-gated power transistors has been developed. The model takes into account the effect of substrate doping gradient on the threshold voltage of the transistor and it can be applied to lateral and vertical DMOS and IGBT transistor structures. The model has been tested by comparing the calculated I-V characteristics for an MOS structure having various doping gradients to the results from a 2-D device simulator.

U2 - 10.1049/el:19920880

DO - 10.1049/el:19920880

M3 - Article

VL - 28

SP - 1384

EP - 1385

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 15

ER -

Grahn K, Andersson M, Kuivalainen P, Eränen S. Model for DMOST threshold voltage. Electronics Letters. 1992;28(15):1384-1385. https://doi.org/10.1049/el:19920880