Model for the cutoff frequency in RF MOSFETs

Pekka Kuivalainen, Esa Tarvainen, Hannu Ronkainen, Tero Majamaa, Anssi Hovinen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We present a simple analytical model for the drain current dependent cutoff frequency fT in submicron high frequency MOSFET's. The model combines the SPICE MOS3 drain current model and a modified McMacken-Chamberlain model for the current dependent transit time, which allows the description of the I-V characteristics and fT vs. current with the same set of SPICE parameters. The model is verified by comparing simulated results to measured data for 0.6 μm RF MOSFET's fabricated at VTT Electronics. The model explains well the observed behaviour. Furthermore, the comparison indicates that when the channel length is reduced to a half-micron range and below, most of the charging delay is caused by the transit time.

Original languageEnglish
Pages (from-to)193 - 195
Number of pages3
JournalPhysica Scripta
VolumeT69
DOIs
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed

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MOSFET
cut-off
field effect transistors
transit time
Model
Analytical Model
charging
Electronics
Dependent
Range of data
electronics

Cite this

Kuivalainen, P., Tarvainen, E., Ronkainen, H., Majamaa, T., & Hovinen, A. (1997). Model for the cutoff frequency in RF MOSFETs. Physica Scripta, T69, 193 - 195. https://doi.org/10.1088/0031-8949/1997/T69/038
Kuivalainen, Pekka ; Tarvainen, Esa ; Ronkainen, Hannu ; Majamaa, Tero ; Hovinen, Anssi. / Model for the cutoff frequency in RF MOSFETs. In: Physica Scripta. 1997 ; Vol. T69. pp. 193 - 195.
@article{8c0bdf4491d44af88b4fc6c1fafb6d1a,
title = "Model for the cutoff frequency in RF MOSFETs",
abstract = "We present a simple analytical model for the drain current dependent cutoff frequency fT in submicron high frequency MOSFET's. The model combines the SPICE MOS3 drain current model and a modified McMacken-Chamberlain model for the current dependent transit time, which allows the description of the I-V characteristics and fT vs. current with the same set of SPICE parameters. The model is verified by comparing simulated results to measured data for 0.6 μm RF MOSFET's fabricated at VTT Electronics. The model explains well the observed behaviour. Furthermore, the comparison indicates that when the channel length is reduced to a half-micron range and below, most of the charging delay is caused by the transit time.",
author = "Pekka Kuivalainen and Esa Tarvainen and Hannu Ronkainen and Tero Majamaa and Anssi Hovinen",
year = "1997",
doi = "10.1088/0031-8949/1997/T69/038",
language = "English",
volume = "T69",
pages = "193 -- 195",
journal = "Physica Scripta",
issn = "0031-8949",
publisher = "Institute of Physics IOP",

}

Kuivalainen, P, Tarvainen, E, Ronkainen, H, Majamaa, T & Hovinen, A 1997, 'Model for the cutoff frequency in RF MOSFETs', Physica Scripta, vol. T69, pp. 193 - 195. https://doi.org/10.1088/0031-8949/1997/T69/038

Model for the cutoff frequency in RF MOSFETs. / Kuivalainen, Pekka; Tarvainen, Esa; Ronkainen, Hannu; Majamaa, Tero; Hovinen, Anssi.

In: Physica Scripta, Vol. T69, 1997, p. 193 - 195.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Model for the cutoff frequency in RF MOSFETs

AU - Kuivalainen, Pekka

AU - Tarvainen, Esa

AU - Ronkainen, Hannu

AU - Majamaa, Tero

AU - Hovinen, Anssi

PY - 1997

Y1 - 1997

N2 - We present a simple analytical model for the drain current dependent cutoff frequency fT in submicron high frequency MOSFET's. The model combines the SPICE MOS3 drain current model and a modified McMacken-Chamberlain model for the current dependent transit time, which allows the description of the I-V characteristics and fT vs. current with the same set of SPICE parameters. The model is verified by comparing simulated results to measured data for 0.6 μm RF MOSFET's fabricated at VTT Electronics. The model explains well the observed behaviour. Furthermore, the comparison indicates that when the channel length is reduced to a half-micron range and below, most of the charging delay is caused by the transit time.

AB - We present a simple analytical model for the drain current dependent cutoff frequency fT in submicron high frequency MOSFET's. The model combines the SPICE MOS3 drain current model and a modified McMacken-Chamberlain model for the current dependent transit time, which allows the description of the I-V characteristics and fT vs. current with the same set of SPICE parameters. The model is verified by comparing simulated results to measured data for 0.6 μm RF MOSFET's fabricated at VTT Electronics. The model explains well the observed behaviour. Furthermore, the comparison indicates that when the channel length is reduced to a half-micron range and below, most of the charging delay is caused by the transit time.

U2 - 10.1088/0031-8949/1997/T69/038

DO - 10.1088/0031-8949/1997/T69/038

M3 - Article

VL - T69

SP - 193

EP - 195

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

ER -