Model for the cutoff frequency in RF MOSFETs

Pekka Kuivalainen, Esa Tarvainen, Hannu Ronkainen, Tero Majamaa, Anssi Hovinen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    We present a simple analytical model for the drain current dependent cutoff frequency fT in submicron high frequency MOSFET's. The model combines the SPICE MOS3 drain current model and a modified McMacken-Chamberlain model for the current dependent transit time, which allows the description of the I-V characteristics and fT vs. current with the same set of SPICE parameters. The model is verified by comparing simulated results to measured data for 0.6 μm RF MOSFET's fabricated at VTT Electronics. The model explains well the observed behaviour. Furthermore, the comparison indicates that when the channel length is reduced to a half-micron range and below, most of the charging delay is caused by the transit time.

    Original languageEnglish
    Pages (from-to)193 - 195
    Number of pages3
    JournalPhysica Scripta
    VolumeT69
    DOIs
    Publication statusPublished - 1997
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    MOSFET
    cut-off
    field effect transistors
    transit time
    Model
    Analytical Model
    charging
    Electronics
    Dependent
    Range of data
    electronics

    Cite this

    Kuivalainen, P., Tarvainen, E., Ronkainen, H., Majamaa, T., & Hovinen, A. (1997). Model for the cutoff frequency in RF MOSFETs. Physica Scripta, T69, 193 - 195. https://doi.org/10.1088/0031-8949/1997/T69/038
    Kuivalainen, Pekka ; Tarvainen, Esa ; Ronkainen, Hannu ; Majamaa, Tero ; Hovinen, Anssi. / Model for the cutoff frequency in RF MOSFETs. In: Physica Scripta. 1997 ; Vol. T69. pp. 193 - 195.
    @article{8c0bdf4491d44af88b4fc6c1fafb6d1a,
    title = "Model for the cutoff frequency in RF MOSFETs",
    abstract = "We present a simple analytical model for the drain current dependent cutoff frequency fT in submicron high frequency MOSFET's. The model combines the SPICE MOS3 drain current model and a modified McMacken-Chamberlain model for the current dependent transit time, which allows the description of the I-V characteristics and fT vs. current with the same set of SPICE parameters. The model is verified by comparing simulated results to measured data for 0.6 μm RF MOSFET's fabricated at VTT Electronics. The model explains well the observed behaviour. Furthermore, the comparison indicates that when the channel length is reduced to a half-micron range and below, most of the charging delay is caused by the transit time.",
    author = "Pekka Kuivalainen and Esa Tarvainen and Hannu Ronkainen and Tero Majamaa and Anssi Hovinen",
    year = "1997",
    doi = "10.1088/0031-8949/1997/T69/038",
    language = "English",
    volume = "T69",
    pages = "193 -- 195",
    journal = "Physica Scripta",
    issn = "0031-8949",
    publisher = "Institute of Physics IOP",

    }

    Kuivalainen, P, Tarvainen, E, Ronkainen, H, Majamaa, T & Hovinen, A 1997, 'Model for the cutoff frequency in RF MOSFETs', Physica Scripta, vol. T69, pp. 193 - 195. https://doi.org/10.1088/0031-8949/1997/T69/038

    Model for the cutoff frequency in RF MOSFETs. / Kuivalainen, Pekka; Tarvainen, Esa; Ronkainen, Hannu; Majamaa, Tero; Hovinen, Anssi.

    In: Physica Scripta, Vol. T69, 1997, p. 193 - 195.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Model for the cutoff frequency in RF MOSFETs

    AU - Kuivalainen, Pekka

    AU - Tarvainen, Esa

    AU - Ronkainen, Hannu

    AU - Majamaa, Tero

    AU - Hovinen, Anssi

    PY - 1997

    Y1 - 1997

    N2 - We present a simple analytical model for the drain current dependent cutoff frequency fT in submicron high frequency MOSFET's. The model combines the SPICE MOS3 drain current model and a modified McMacken-Chamberlain model for the current dependent transit time, which allows the description of the I-V characteristics and fT vs. current with the same set of SPICE parameters. The model is verified by comparing simulated results to measured data for 0.6 μm RF MOSFET's fabricated at VTT Electronics. The model explains well the observed behaviour. Furthermore, the comparison indicates that when the channel length is reduced to a half-micron range and below, most of the charging delay is caused by the transit time.

    AB - We present a simple analytical model for the drain current dependent cutoff frequency fT in submicron high frequency MOSFET's. The model combines the SPICE MOS3 drain current model and a modified McMacken-Chamberlain model for the current dependent transit time, which allows the description of the I-V characteristics and fT vs. current with the same set of SPICE parameters. The model is verified by comparing simulated results to measured data for 0.6 μm RF MOSFET's fabricated at VTT Electronics. The model explains well the observed behaviour. Furthermore, the comparison indicates that when the channel length is reduced to a half-micron range and below, most of the charging delay is caused by the transit time.

    U2 - 10.1088/0031-8949/1997/T69/038

    DO - 10.1088/0031-8949/1997/T69/038

    M3 - Article

    VL - T69

    SP - 193

    EP - 195

    JO - Physica Scripta

    JF - Physica Scripta

    SN - 0031-8949

    ER -