Model for the cutoff frequency in RF MOSFETs

Pekka Kuivalainen, Esa Tarvainen, Hannu Ronkainen, Tero Majamaa, Anssi Hovinen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    We present a simple analytical model for the drain current dependent cutoff frequency fT in submicron high frequency MOSFET's. The model combines the SPICE MOS3 drain current model and a modified McMacken-Chamberlain model for the current dependent transit time, which allows the description of the I-V characteristics and fT vs. current with the same set of SPICE parameters. The model is verified by comparing simulated results to measured data for 0.6 μm RF MOSFET's fabricated at VTT Electronics. The model explains well the observed behaviour. Furthermore, the comparison indicates that when the channel length is reduced to a half-micron range and below, most of the charging delay is caused by the transit time.

    Original languageEnglish
    Pages (from-to)193 - 195
    Number of pages3
    JournalPhysica Scripta
    VolumeT69
    DOIs
    Publication statusPublished - 1997
    MoE publication typeA1 Journal article-refereed

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    Kuivalainen, P., Tarvainen, E., Ronkainen, H., Majamaa, T., & Hovinen, A. (1997). Model for the cutoff frequency in RF MOSFETs. Physica Scripta, T69, 193 - 195. https://doi.org/10.1088/0031-8949/1997/T69/038