Model for the cutoff frequency in RF MOSFETs

Pekka Kuivalainen; Esa Tarvainen; Hannu Ronkainen; Tero Majamaa; Anssi Hovinen

doi:10.1088/0031-8949/1997/T69/038

Model for the cutoff frequency in RF MOSFETs

Pekka Kuivalainen, Esa Tarvainen, Hannu Ronkainen, Tero Majamaa, Anssi Hovinen

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

We present a simple analytical model for the drain current dependent cutoff frequency f_T in submicron high frequency MOSFET's. The model combines the SPICE MOS3 drain current model and a modified McMacken-Chamberlain model for the current dependent transit time, which allows the description of the I-V characteristics and f_T vs. current with the same set of SPICE parameters. The model is verified by comparing simulated results to measured data for 0.6 μm RF MOSFET's fabricated at VTT Electronics. The model explains well the observed behaviour. Furthermore, the comparison indicates that when the channel length is reduced to a half-micron range and below, most of the charging delay is caused by the transit time.

Original language	English
Pages (from-to)	193 - 195
Number of pages	3
Journal	Physica Scripta
Volume	T69
DOIs	https://doi.org/10.1088/0031-8949/1997/T69/038
Publication status	Published - 1997
MoE publication type	A1 Journal article-refereed

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10.1088/0031-8949/1997/T69/038

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@article{8c0bdf4491d44af88b4fc6c1fafb6d1a,

title = "Model for the cutoff frequency in RF MOSFETs",

abstract = "We present a simple analytical model for the drain current dependent cutoff frequency fT in submicron high frequency MOSFET's. The model combines the SPICE MOS3 drain current model and a modified McMacken-Chamberlain model for the current dependent transit time, which allows the description of the I-V characteristics and fT vs. current with the same set of SPICE parameters. The model is verified by comparing simulated results to measured data for 0.6 μm RF MOSFET's fabricated at VTT Electronics. The model explains well the observed behaviour. Furthermore, the comparison indicates that when the channel length is reduced to a half-micron range and below, most of the charging delay is caused by the transit time. ",

author = "Pekka Kuivalainen and Esa Tarvainen and Hannu Ronkainen and Tero Majamaa and Anssi Hovinen",

year = "1997",

doi = "10.1088/0031-8949/1997/T69/038",

language = "English",

volume = "T69",

pages = "193 -- 195",

journal = "Physica Scripta",

issn = "0281-1847",

publisher = "Institute of Physics IOP",

}

TY - JOUR

T1 - Model for the cutoff frequency in RF MOSFETs

AU - Kuivalainen, Pekka

AU - Tarvainen, Esa

AU - Ronkainen, Hannu

AU - Majamaa, Tero

AU - Hovinen, Anssi

PY - 1997

Y1 - 1997

N2 - We present a simple analytical model for the drain current dependent cutoff frequency fT in submicron high frequency MOSFET's. The model combines the SPICE MOS3 drain current model and a modified McMacken-Chamberlain model for the current dependent transit time, which allows the description of the I-V characteristics and fT vs. current with the same set of SPICE parameters. The model is verified by comparing simulated results to measured data for 0.6 μm RF MOSFET's fabricated at VTT Electronics. The model explains well the observed behaviour. Furthermore, the comparison indicates that when the channel length is reduced to a half-micron range and below, most of the charging delay is caused by the transit time.

AB - We present a simple analytical model for the drain current dependent cutoff frequency fT in submicron high frequency MOSFET's. The model combines the SPICE MOS3 drain current model and a modified McMacken-Chamberlain model for the current dependent transit time, which allows the description of the I-V characteristics and fT vs. current with the same set of SPICE parameters. The model is verified by comparing simulated results to measured data for 0.6 μm RF MOSFET's fabricated at VTT Electronics. The model explains well the observed behaviour. Furthermore, the comparison indicates that when the channel length is reduced to a half-micron range and below, most of the charging delay is caused by the transit time.

U2 - 10.1088/0031-8949/1997/T69/038

DO - 10.1088/0031-8949/1997/T69/038

M3 - Article

SN - 0281-1847

VL - T69

SP - 193

EP - 195

JO - Physica Scripta

JF - Physica Scripta

ER -

Model for the cutoff frequency in RF MOSFETs

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