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Model for the cutoff frequency in RF MOSFETs
Pekka Kuivalainen
, Esa Tarvainen
, Hannu Ronkainen
, Tero Majamaa
, Anssi Hovinen
Helsinki University of Technology
Research output
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peer-review
Overview
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Keyphrases
Cut-off Frequency
100%
Transit Time
100%
RF MOSFET
100%
Submicron
50%
I-V Characteristics
50%
Channel Length
50%
Spices
50%
Observed Behavior
50%
Simple Analytical Model
50%
MOSFET
50%
Charging Delay
50%
Drain Current Model
50%
Chamberlain
50%
Drain Current
50%
SPICE Parameters
50%
Engineering
Cutoff Frequency
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
SPICE
66%
Current Drain
66%
Simulated Result
33%
Measured Data
33%
Channel Length
33%
Analytical Model
33%
Current-Voltage Characteristic
33%
INIS
mosfet
100%
spices
66%
simulation
33%
comparative evaluations
33%
data
33%
length
33%
range
33%
i-v characteristic
33%