Modeling and measurement methods for high speed bipolar transistors

Markku Sipilä

    Research output: ThesisDissertation

    Abstract

    The modeling problems in high speed bipolar transistors are discussed. The dynamic modeling of carrier distribution in the base, the parameter determination for a multisection model, model verification in the time domain, and the determination of parasitics are considered. Special emphasis is placed on the possible use of a new time domain measurement technique for model verification and parameter determination. An improved nonlinear high frequency model, and a model for doping density are presented. A system for the accurate measurement of high frequency periodic time domain voltage and current waveforms of a nonlinear microwave device is shown. The determination of package parasitic series inductances of microwave bipolar transistor is performed.
    Original languageEnglish
    QualificationDoctor Degree
    Awarding Institution
    • Helsinki University of Technology
    Place of PublicationEspoo
    Publisher
    Print ISBNs978-951-754-881-6
    Publication statusPublished - 1989
    MoE publication typeG4 Doctoral dissertation (monograph)

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  • Cite this

    Sipilä, M. (1989). Modeling and measurement methods for high speed bipolar transistors. Helsinki University of Technology.