The modeling problems in high speed bipolar transistors are discussed. The dynamic modeling of carrier distribution in the base, the parameter determination for a multisection model, model verification in the time domain, and the determination of parasitics are considered. Special emphasis is placed on the possible use of a new time domain measurement technique for model verification and parameter determination. An improved nonlinear high frequency model, and a model for doping density are presented. A system for the accurate measurement of high frequency periodic time domain voltage and current waveforms of a nonlinear microwave device is shown. The determination of package parasitic series inductances of microwave bipolar transistor is performed.
|Place of Publication||Espoo|
|Publication status||Published - 1989|
|MoE publication type||G4 Doctoral dissertation (monograph)|