Modeling and measurement methods for high speed bipolar transistors

The modeling problems in high speed bipolar transistors are discussed. The dynamic modeling of carrier distribution in the base, the parameter determination for a multisection model, model verification in the time domain, and the determination of parasitics are considered. Special emphasis is placed on the possible use of a new time domain measurement technique for model verification and parameter determination. An improved nonlinear high frequency model, and a model for doping density are presented. A system for the accurate measurement of high frequency periodic time domain voltage and current waveforms of a nonlinear microwave device is shown. The determination of package parasitic series inductances of microwave bipolar transistor is performed.