Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures

Markku Ylilammi; Oili M.E. Ylivaara; Riikka L. Puurunen

doi:10.1063/1.5028178

Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures

Markku Ylilammi (Corresponding Author), Oili M.E. Ylivaara, Riikka L. Puurunen

Research output: Contribution to journal › Article › Scientific › peer-review

18 Citations (Scopus)

Abstract

The conformality of thin films grown by atomic layer deposition (ALD) is studied using all-silicon test structures with long narrow lateral channels. A diffusion model, developed in this work, is used for studying the propagation of ALD growth in narrow channels. The diffusion model takes into account the gas transportation at low pressures, the dynamic Langmuir adsorption model for the film growth and the effect of channel narrowing due to film growth. The film growth is calculated by solving the diffusion equation with surface reactions. An efficient analytic approximate solution of the diffusion equation is developed for fitting the model to the measured thickness profile. The fitting gives the equilibrium constant of adsorption and the sticking coefficient. This model and Gordon's plug flow model are compared. The simulations predict the experimental measurement results quite well for Al₂O₃ and TiO₂ ALD processes.

Original language	English
Article number	205301
Journal	Journal of Applied Physics
Volume	123
Issue number	20
DOIs	https://doi.org/10.1063/1.5028178
Publication status	Published - 28 May 2018
MoE publication type	A1 Journal article-refereed

Access to Document

10.1063/1.5028178

Fingerprint Dive into the research topics of 'Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures'. Together they form a unique fingerprint.

Cite this

@article{37cc9432e430422a81f01fb4b62855b3,

title = "Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures",

abstract = "The conformality of thin films grown by atomic layer deposition (ALD) is studied using all-silicon test structures with long narrow lateral channels. A diffusion model, developed in this work, is used for studying the propagation of ALD growth in narrow channels. The diffusion model takes into account the gas transportation at low pressures, the dynamic Langmuir adsorption model for the film growth and the effect of channel narrowing due to film growth. The film growth is calculated by solving the diffusion equation with surface reactions. An efficient analytic approximate solution of the diffusion equation is developed for fitting the model to the measured thickness profile. The fitting gives the equilibrium constant of adsorption and the sticking coefficient. This model and Gordon's plug flow model are compared. The simulations predict the experimental measurement results quite well for Al2O3 and TiO2 ALD processes.",

author = "Markku Ylilammi and Ylivaara, {Oili M.E.} and Puurunen, {Riikka L.}",

note = "Funding Information: This work received funding from the Academy of Finland through the Finnish Centre of Excellence in Atomic Layer Deposition and from Tekes (since 2018 Business Finland) through the PillarHall TUTL Project. The samples were fabricated at the Micronova Clean Room Facilities of VTT, Espoo. Publisher Copyright: {\textcopyright} 2018 Author(s). Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "2018",

month = may,

day = "28",

doi = "10.1063/1.5028178",

language = "English",

volume = "123",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics (AIP)",

number = "20",

}

TY - JOUR

T1 - Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures

AU - Ylilammi, Markku

AU - Ylivaara, Oili M.E.

AU - Puurunen, Riikka L.

N1 - Funding Information: This work received funding from the Academy of Finland through the Finnish Centre of Excellence in Atomic Layer Deposition and from Tekes (since 2018 Business Finland) through the PillarHall TUTL Project. The samples were fabricated at the Micronova Clean Room Facilities of VTT, Espoo. Publisher Copyright: © 2018 Author(s). Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2018/5/28

Y1 - 2018/5/28

N2 - The conformality of thin films grown by atomic layer deposition (ALD) is studied using all-silicon test structures with long narrow lateral channels. A diffusion model, developed in this work, is used for studying the propagation of ALD growth in narrow channels. The diffusion model takes into account the gas transportation at low pressures, the dynamic Langmuir adsorption model for the film growth and the effect of channel narrowing due to film growth. The film growth is calculated by solving the diffusion equation with surface reactions. An efficient analytic approximate solution of the diffusion equation is developed for fitting the model to the measured thickness profile. The fitting gives the equilibrium constant of adsorption and the sticking coefficient. This model and Gordon's plug flow model are compared. The simulations predict the experimental measurement results quite well for Al2O3 and TiO2 ALD processes.

AB - The conformality of thin films grown by atomic layer deposition (ALD) is studied using all-silicon test structures with long narrow lateral channels. A diffusion model, developed in this work, is used for studying the propagation of ALD growth in narrow channels. The diffusion model takes into account the gas transportation at low pressures, the dynamic Langmuir adsorption model for the film growth and the effect of channel narrowing due to film growth. The film growth is calculated by solving the diffusion equation with surface reactions. An efficient analytic approximate solution of the diffusion equation is developed for fitting the model to the measured thickness profile. The fitting gives the equilibrium constant of adsorption and the sticking coefficient. This model and Gordon's plug flow model are compared. The simulations predict the experimental measurement results quite well for Al2O3 and TiO2 ALD processes.

UR - http://www.scopus.com/inward/record.url?scp=85047484176&partnerID=8YFLogxK

U2 - 10.1063/1.5028178

DO - 10.1063/1.5028178

M3 - Article

AN - SCOPUS:85047484176

VL - 123

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 20

M1 - 205301

ER -

Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures

Abstract

Access to Document

Other files and links

Cite this